公开(公告)号：US11165011B2

公开(公告)日：2021-11-02

申请号：US16352770

申请日：2019-03-13

Applicant: FUJIFILM Corporation

Inventor： Takamichi Fujii ,  Takayuki Naono

IPC: H01L41/083 ,  H01L41/047 ,  H01L41/09 ,  H01L41/297 ,  H01L41/316 ,  B06B1/06 ,  B81C1/00 ,  H01L41/08 ,  H01L41/27

Abstract: Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12). The interlayer (22) is formed of a material different from that of the second electrode (18) and has a thickness of 0.4 μm to 10 μm. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (12). The respective layers (14 to 28) laminated on the silicon substrate (12) can be formed using a thin film formation method represented by a vapor phase epitaxial method.