公开(公告)号：US06566204B1

公开(公告)日：2003-05-20

申请号：US09540734

申请日：2000-03-31

申请人： Fu-Cheng Wang ,  Constantin Bulucea

发明人： Fu-Cheng Wang ,  Constantin Bulucea

IPC分类号： H01L21336

CPC分类号： H01L29/6659 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/1045 ,  H01L29/665

摘要： To furnish an IGFET (120 or 122) with an asymmetrically doped channel zone (144 or 164), a mask (212) is provided over a semiconductor body and an overlying electrically insulated gate electrode (148P or 168P). Ions of a semiconductor dopant species are directed toward an opening (213) in the mask from two different angular orientations along paths that originate laterally beyond opposite respective opening-defined sides of the mask. The location and shape of the opening are controlled so that largely only ions impinging from one of the angular orientations enter the intended location for the channel zone. Ions impinging from the other angular orientation are shadowed by the mask from entering the channel zone location. Although the ions impinging from this other angular orientation do not significantly dope the channel zone location, they normally enter the semiconductor body elsewhere, e.g., the intended location for the channel zone of another IGFET.

摘要翻译： 为了提供具有不对称掺杂沟道区（144或164）的IGFET（120或122），掩模（212）设置在半导体主体和上覆电绝缘栅电极（148P或168P）上。 半导体掺杂剂物质的离子通过沿着路径的两个不同的角度取向指向掩模中的开口（213），该路径横向超过掩模的相对的开口限定侧。 控制开口的位置和形状，使得很大程度上只有从角度定向中的一个入射的离子进入通道区域的预期位置。 从另一个角度方向入射的离子被掩模遮蔽进入通道区位置。 尽管从该另一角度方向入射的离子不会显着地掺杂通道区位置，但是它们通常进入其它地方的半导体体，例如另一IGFET的沟道区的预期位置。

公开(公告)号：US20120181614A1

公开(公告)日：2012-07-19

申请号：US13309473

申请日：2011-12-01

申请人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L27/088

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 μm deep into the body material but not more than 0.1 μm deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.

摘要翻译： IGFET（40或42）具有位于主体材料（50）中的通道区（64或84）。 通过设置通道区域中的净掺杂剂浓度以在IGFET的源极/漏极区域（60和62或80和82）之间的位置处纵向达到局部表面最小值来减轻短通道阈值电压滚降和穿透，以及 通过排列主体材料中的净掺杂剂浓度达到主体材料深度超过0.1μm的局部表面最大深度，但不超过体积材料的0.1μm深。 p沟道IGFET（120或122）的源极/漏极区（140和142或160和162）具有渐变结特征以减小结电容，从而提高开关速度。

公开(公告)号：US08120531B2

公开(公告)日：2012-02-21

申请号：US12719294

申请日：2010-03-08

申请人： Chao-Tung Yang ,  Fu-Cheng Wang ,  Shoufang Chen ,  Shuo-Yuan Hsiao

发明人： Chao-Tung Yang ,  Fu-Cheng Wang ,  Shoufang Chen ,  Shuo-Yuan Hsiao

IPC分类号： G01S19/36

CPC分类号： G01S19/36 ,  G01S19/33

摘要： A signal processing apparatus for a multi-mode satellite positioning system includes a band-pass filter, a local oscillator circuit, a first mixing circuit, a second mixing circuit, an analog-to-digital converter and a baseband circuit. By properly allocating a local frequency, radio frequency (RF) signals of a Global Positioning System (GPS), a Galileo positioning system and a Global Navigation System (GLONASS) are processed via a single signal path to save hardware cost.

摘要翻译： 一种用于多模式卫星定位系统的信号处理装置，包括带通滤波器，本地振荡器电路，第一混频电路，第二混频电路，模数转换器和基带电路。 通过适当地分配本地频率，通过单个信号路径处理全球定位系统（GPS），伽利略定位系统和全球导航系统（GLONASS）的射频（RF）信号以节省硬件成本。

公开(公告)号：US20110193485A1

公开(公告)日：2011-08-11

申请号：US12805658

申请日：2010-08-12

申请人： Bin-Juine Huang ,  Chun-Wen Tang ,  Fu-Cheng Wang

发明人： Bin-Juine Huang ,  Chun-Wen Tang ,  Fu-Cheng Wang

IPC分类号： H05B37/02 ,  H05B41/24

CPC分类号： H05B33/086 ,  H05B33/0866 ,  H05B33/0872

摘要： The invention discloses a novel control system for a Poly-Chromatic light-emitting diode (LED) lighting system, and applies feed forward and feedback control techniques to regulate the color and luminous outputs. Also, the control system is proposed for achieving luminous and color consistency for Poly-Chromatic LED lighting.

摘要翻译： 本发明公开了一种用于多色发光二极管（LED）照明系统的新型控制系统，并且使用前馈和反馈控制技术来调节颜色和发光输出。 此外，为了实现多色LED照明的发光和颜色一致性，提出了控制系统。

公开(公告)号：US07595244B1

公开(公告)日：2009-09-29

申请号：US11975042

申请日：2007-10-16

申请人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L21/336

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： Fabrication of two differently configured like-polarity insulated-gate field-effect transistors (40 or 42 and 240 or 242) entails introducing multiple body-material semiconductor dopants of the same conductivity type into a semiconductor body. Gate electrodes (74 or 94) are defined such that each body-material dopant reaches a maximum concentration below the channel surface depletion regions, below all gate-electrode material overlying the channel zones (64 or 84), and at a different depth than each other body-material dopant. The transistors are provided with source/drain zones (60 or 80) of opposite conductivity type to, and with halo pocket portions of the same conductivity type as, the body-material dopants. One pocket portion (100/102 or 104) extends along both source/drain zones of one of the transistors. Another pocket portion (244 or 246) extends largely along only one of the source/drain zones of the other transistor so that it is asymmetrical.

摘要翻译： 两个不同构造的同极性绝缘栅场效应晶体管（40或42和240或242）的制造需要将相同导电类型的多个体材料半导体掺杂剂引入半导体本体。 限定栅电极（74或94），使得每个主体材料掺杂剂在沟道表面耗尽区下方达到最大浓度，低于覆盖沟道区（64或84）的所有栅电极材料，并且在不同于每个 其他体材料掺杂剂。 晶体管具有与体材料掺杂剂相同的导电类型的源极/漏极区（60或80）以及具有相同导电类型的卤素口袋部分。 一个口袋部分（100/102或104）沿着一个晶体管的源极/漏极区域延伸。 另一个口袋部分（244或246）沿着另一个晶体管的源极/漏极区域中的一个较大地延伸，使得它是不对称的。

公开(公告)号：US06797576B1

公开(公告)日：2004-09-28

申请号：US10327352

申请日：2002-12-20

申请人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L21336

CPC分类号： H01L29/66492 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823892 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/665

摘要： An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 &mgr;m deep into the body material but not more than 0.1 &mgr;m deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.

摘要翻译： IGFET（40或42）具有位于主体材料（50）中的通道区（64或84）。 通过设置通道区域中的净掺杂剂浓度以在IGFET的源极/漏极区域（60和62或80和82）之间的位置处纵向达到局部表面最小值来减轻短通道阈值电压滚降和穿透，以及 通过布置主体材料中的净掺杂剂浓度达到主体材料深度超过0.1μm的局部地下最大深度，但不超过0.1μm深的主体材料。 p沟道IGFET（120或122）的源极/漏极区（140和142或160和162）具有渐变结特征以减小结电容，从而提高开关速度。

公开(公告)号：US20120273880A1

公开(公告)日：2012-11-01

申请号：US12912612

申请日：2010-10-26

申请人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L27/088 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 μm deep into the body material but not more than 0.1 μm deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.

公开(公告)号：US08129262B1

公开(公告)日：2012-03-06

申请号：US12607041

申请日：2009-10-27

申请人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L21/04

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： Fabrication of an insulated-gate field-effect transistor (110) entails separately introducing three body-material dopants, typically through an opening in a mask, into body material (50) of a semiconductor body so as to reach respective maximum dopant concentrations at three different vertical locations in the body material. A gate electrode (74) is subsequently defined after which a pair of source/drain zones (60 and 62), each having a main portion (60M or 80M) and a more lightly doped lateral extension (60E or 62E), are formed in the semiconductor body. An anneal is performed during or subsequent to introduction of semiconductor dopant that defines the source/drain zones. The body material is typically provided with at least one more heavily doped halo pocket portion (100 and 102) along the source/drain zones. The vertical dopant profile resulting from the body-material dopants alleviates punchthrough and reduces current leakage.

摘要翻译： 绝缘栅场效应晶体管（110）的制造需要通常将三个体材料掺杂剂（通常通过掩模中的开口）引入半导体主体的主体材料（50）中，以便在三层中达到各自的最大掺杂剂浓度 不同垂直位置的身材。 随后限定栅电极（74），之后在每一个具有主要部分（60M或80M）和更轻掺杂的侧向延伸部（60E或62E）的一对源极/漏极区域（60和62）上形成 半导体体。 在引入定义源极/漏极区的半导体掺杂剂期间或之后进行退火。 主体材料通常沿着源极/漏极区域设置有至少一个更重掺杂的卤素口袋部分（100和102）。 由体材料掺杂物产生的垂直掺杂剂分布减轻穿透并减少电流泄漏。

公开(公告)号：US07785971B1

公开(公告)日：2010-08-31

申请号：US11703350

申请日：2007-02-06

申请人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L21/336

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： Fabrication of complementary first and second insulated-gate field-effect transistors (110 or 112 and 120 or 122) from a semiconductor body entails separately introducing (i) three body-material dopants into the body material (50) for the first transistor so as to reach respective maximum dopant concentrations at three different locations in the first transistor's body material and (ii) two body-material dopants into the body material (130) for the second transistor so as to reach respective maximum dopant concentrations at two different locations in the second transistor's body material. Gate electrodes (74 or 94 and 154 or 194) are subsequently defined after which source/drain zones (60, 62 or 80, 82 and 140, 142 or 160, 162) are formed in the semiconductor body. The vertical dopant profiles resulting from the body-material dopants alleviate punchthrough and reduce current leakage.

摘要翻译： 从半导体主体制造互补的第一和第二绝缘栅场效应晶体管（110或112和120或122）需要将（i）三个体材料掺杂物分别引入用于第一晶体管的体材料（50）中，以便 以在第一晶体管主体材料中的三个不同位置处达到各自的最大掺杂浓度，和（ii）两个体材料掺杂物进入用于第二晶体管的主体材料（130）中，以便达到第二晶体管的两个不同位置处的各自的最大掺杂浓度 第二晶体管的主体材料。 随后在半导体本体中形成源/漏区（60,62或80,82和140,142或160,162）之后限定栅电极（74或94和154或194）。 由体材料掺杂物产生的垂直掺杂剂分布减轻穿透并减少电流泄漏。

公开(公告)号：US20090176133A1

公开(公告)日：2009-07-09

申请号：US12275657

申请日：2008-11-21

申请人： Fu-Cheng Wang ,  Hsuan-Tsung Chen

发明人： Fu-Cheng Wang ,  Hsuan-Tsung Chen

IPC分类号： H01M8/04

CPC分类号： H01M8/04753 ,  H01M8/04089 ,  H01M8/04619 ,  H01M8/04992 ,  H01M2008/1095

摘要： A fuel cell control system and a control method thereof are provided. The fuel cell control system includes an air supply module, a fuel supply module having a fuel supply end, a fuel cell set having an electrical output end, an measuring unit and a control module having an arithmetic logic unit. A set of control algorithms is employed to effectively adjust the electrical output in order to identify the transfer function and to perform controller design. When the electrical output of the fuel cell is different from the default electrical output, the controller then regulates the fuel supply and the air supply to provide a stable fuel cell electrical output and to reduce fuel consumption.

摘要翻译： 提供燃料电池控制系统及其控制方法。 燃料电池控制系统包括空气供应模块，具有燃料供给端的燃料供应模块，具有电输出端的燃料电池组，测量单元和具有算术逻辑单元的控制模块。 采用一套控制算法来有效地调整电气输出，以便识别传递函数并执行控制器设计。 当燃料电池的电输出与默认电气输出不同时，控制器然后调节燃料供应和空气供应以提供稳定的燃料电池电输出并降低燃料消耗。