公开(公告)号：US09293554B2

公开(公告)日：2016-03-22

申请号：US14797982

申请日：2015-07-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg ,  Jian Yu

IPC: H01L21/8238 ,  H01L29/45 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L29/456 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/28575 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/78

Abstract: Metal semiconductor alloy contacts are provided on each of a source region and a drain region which are present in a semiconductor substrate. A transition metal is then deposited on each of the metal semiconductor alloy contacts, and during the deposition of the transition metal, the deposited transition metal reacts preferably, but not necessarily always, in-situ with a portion of each the metal semiconductor alloy contacts forming a transition metal-metal semiconductor alloy liner atop each metal semiconductor alloy contact. Each transition metal-metal semiconductor alloy liner that is provided has outer edges that are vertically coincident with outer edges of each metal semiconductor alloy contact. The transition metal-metal semiconductor alloy liner is more etch resistant as compared to the underlying metal semiconductor alloy. As such, the transition metal-metal semiconductor alloy liner can serve as an effective etch stop layer during any subsequently performed etch process.

公开(公告)号：US20130267090A1

公开(公告)日：2013-10-10

申请号：US13908624

申请日：2013-06-03

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Christian Lavoie ,  Ahmet S. Ozcan ,  Zhen Zhang ,  Bin Yang

IPC: H01L21/768

CPC classification number: H01L21/768 ,  H01L21/28518 ,  H01L23/485 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The intermixed metal semiconductor region is annealed to form a textured metal semiconductor alloy. A second metal layer is formed on the textured metal semiconductor alloy. The second metal layer on the textured metal semiconductor alloy is then annealed to form a metal semiconductor alloy contact, in which metal elements from the second metal layer are diffused through the textured metal semiconductor alloy to provide a templated metal semiconductor alloy. The templated metal semiconductor alloy includes a grain size that is greater than 2× for the metal semiconductor alloy, which has a thickness ranging from 15 nm to 50 nm.

Abstract translation: 一种形成金属半导体合金的方法，其包括在半导体衬底的第一深度上形成混合金属半导体区域而没有热扩散。 将混合后的金属半导体区域退火以形成织构化的金属半导体合金。 在纹理金属半导体合金上形成第二金属层。 纹理金属半导体合金上的第二金属层然后退火以形成金属半导体合金接触，其中来自第二金属层的金属元素通过织构化金属半导体合金扩散以提供模板化的金属半导体合金。 模板化金属半导体合金的厚度范围为15nm〜50nm的金属半导体合金的晶粒尺寸大于2×。

公开(公告)号：US08987135B2

公开(公告)日：2015-03-24

申请号：US13908624

申请日：2013-06-03

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc.

Inventor： Christian Lavoie ,  Ahmet S. Ozcan ,  Zhen Zhang ,  Bin Yang

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L21/768 ,  H01L21/28518 ,  H01L23/485 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The intermixed metal semiconductor region is annealed to form a textured metal semiconductor alloy. A second metal layer is formed on the textured metal semiconductor alloy. The second metal layer on the textured metal semiconductor alloy is then annealed to form a metal semiconductor alloy contact, in which metal elements from the second metal layer are diffused through the textured metal semiconductor alloy to provide a templated metal semiconductor alloy. The templated metal semiconductor alloy includes a grain size that is greater than 2× for the metal semiconductor alloy, which has a thickness ranging from 15 nm to 50 nm.

Abstract translation: 一种形成金属半导体合金的方法，其包括在半导体衬底的第一深度上形成混合金属半导体区域而没有热扩散。 将混合后的金属半导体区域退火以形成织构化的金属半导体合金。 在纹理金属半导体合金上形成第二金属层。 纹理金属半导体合金上的第二金属层然后退火以形成金属半导体合金接触，其中来自第二金属层的金属元素通过织构化金属半导体合金扩散以提供模板化的金属半导体合金。 模板化金属半导体合金的厚度范围为15nm〜50nm的金属半导体合金的晶粒尺寸大于2×。