公开(公告)号：US09293554B2

公开(公告)日：2016-03-22

申请号：US14797982

申请日：2015-07-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg ,  Jian Yu

IPC: H01L21/8238 ,  H01L29/45 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L29/456 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/28575 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/78

Abstract: Metal semiconductor alloy contacts are provided on each of a source region and a drain region which are present in a semiconductor substrate. A transition metal is then deposited on each of the metal semiconductor alloy contacts, and during the deposition of the transition metal, the deposited transition metal reacts preferably, but not necessarily always, in-situ with a portion of each the metal semiconductor alloy contacts forming a transition metal-metal semiconductor alloy liner atop each metal semiconductor alloy contact. Each transition metal-metal semiconductor alloy liner that is provided has outer edges that are vertically coincident with outer edges of each metal semiconductor alloy contact. The transition metal-metal semiconductor alloy liner is more etch resistant as compared to the underlying metal semiconductor alloy. As such, the transition metal-metal semiconductor alloy liner can serve as an effective etch stop layer during any subsequently performed etch process.

公开(公告)号：US09595524B2

公开(公告)日：2017-03-14

申请号：US14561632

申请日：2014-12-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brent A. Anderson ,  Nicolas Breil ,  Christian Lavoie

IPC: H01L21/4763 ,  H01L27/088 ,  H01L21/285 ,  H01L21/3213 ,  H01L29/78 ,  H01L29/66 ,  H01L29/45 ,  H01L29/08 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L29/165

CPC classification number: H01L27/0886 ,  H01L21/28518 ,  H01L21/28531 ,  H01L21/32133 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/456 ,  H01L29/66795 ,  H01L29/785

Abstract: A method includes conducting a laser-based anneal treatment on a metal layer positioned above and in direct contact with a top portion of a silicon cap layer located in direct contact with a first diamond shaped epitaxial layer surrounding a first fin and a second diamond shaped epitaxial layer surrounding a second fin. The metal layer extends from the top portion of the silicon cap layer in direct contact with the first diamond shaped epitaxial layer to the top portion of the silicon cap layer in direct contact with the second diamond shaped epitaxial layer. The conducted laser-based anneal treatment forms a silicide layer, a portion of the silicide layer between the first and the second diamond shaped epitaxial layers is substantially thicker than a portion of the silicide layer in contact with the first and the second diamond shaped epitaxial layers.

Abstract translation: 一种方法包括对位于与包围第一鳍片的第一菱形外延层直接接触的硅帽层顶部直接接触的金属层上进行基于激光的退火处理，第二菱形外延 围绕第二鳍的层。 金属层从第一金刚石外延层的直接接触的硅帽层的顶部延伸到硅帽层的顶部，与第二菱形外延层直接接触。 所进行的基于激光的退火处理形成硅化物层，第一和第二菱形外延层之间的硅化物层的一部分基本上比与第一和第二菱形外延层接触的硅化物层的部分厚 。

公开(公告)号：US09543167B2

公开(公告)日：2017-01-10

申请号：US14331267

申请日：2014-07-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brent A. Anderson ,  Nicolas Breil ,  Christian Lavoie

IPC: H01L21/268 ,  H01L21/324 ,  H01L29/04 ,  H01L29/16 ,  H01L29/08 ,  H01L29/45 ,  H01L21/285 ,  H01L21/321 ,  H01L21/8234

CPC classification number: H01L21/324 ,  H01L21/268 ,  H01L21/28518 ,  H01L21/28531 ,  H01L21/321 ,  H01L21/823425 ,  H01L21/823431 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/456

Abstract: A method includes conducting a laser-based anneal treatment on a metal layer positioned above and in direct contact with a first diamond shaped epitaxial layer surrounding a first fin and a second diamond shaped epitaxial layer surrounding a second fin, the metal layer extends from the first diamond shaped epitaxial layer to the second diamond shaped epitaxial layer, the laser-based anneal treatment forms a silicide layer, a portion of the silicide layer between the first and the second diamond shaped epitaxial layers is substantially thicker than a portion of the silicide layer in contact with the first and the second diamond shaped epitaxial layers, and the silicide layer takes on a crystal orientation of the first and the second epitaxial layers.

Abstract translation: 一种方法包括对围绕第一鳍片的第一菱形外延层和围绕第二鳍片的第二菱形外延层直接接触的金属层进行基于激光的退火处理，金属层从第一 金刚石外延层到第二菱形外延层，基于激光的退火处理形成硅化物层，第一和第二菱形外延层之间的硅化物层的一部分基本上比硅化物层的一部分厚 与第一和第二菱形外延层接触，硅化物层承受第一和第二外延层的晶体取向。

公开(公告)号：US09373512B2

公开(公告)日：2016-06-21

申请号：US14094819

申请日：2013-12-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas Breil

IPC: H01L21/425 ,  H01L21/268 ,  H01L21/265

CPC classification number: H01L21/268 ,  H01L21/26546 ,  H01L21/26586 ,  H01L29/66803

Abstract: An apparatus and method for performing ion implantation while minimizing and/or repairing amorphization of the substrate material. The process comprises exposing a substrate to an ion beam and either concurrently or promptly following the ion implantation using a laser to anneal the surface. In addition, a laser may be utilized to preheat the substrate prior to ion implantation. The laser heats the substrate to a temperature that does not cause the resist layer to be damaged. By utilizing a laser to heat the substrate from the top surface the resist is not damaged allowing for the use of photo resist material.

Abstract translation: 一种用于在最小化和/或修复基底材料的非晶化的同时执行离子注入的装置和方法。 该方法包括将衬底暴露于离子束，并且使用激光同时或迅速地进行离子注入来退火表面。 此外，可以利用激光器在离子注入之前预热衬底。 激光将基板加热到不会导致抗蚀剂层损坏的温度。 通过利用激光器从顶表面加热基底，抗蚀剂不被损坏，从而允许使用光致抗蚀剂材料。