公开(公告)号：US09865546B2

公开(公告)日：2018-01-09

申请号：US14729298

申请日：2015-06-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L23/485

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238

Abstract: An aspect of the invention includes a method for forming a contact in a dielectric layer over a semiconductor substrate. The method may comprise: forming a contact opening in a dielectric layer over the semiconductor substrate to expose an upper portion of the semiconductor substrate; depositing a first liner layer to conformally coat the contact opening; causing a portion of the first liner layer to diffuse into the upper portion of the semiconductor substrate to form a first intermix region at the upper portion of the semiconductor substrate; depositing a refractory metal layer over the first intermix region; and depositing a metal in the contact opening thereby forming the contact.

公开(公告)号：US09236345B2

公开(公告)日：2016-01-12

申请号：US14223592

申请日：2014-03-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L29/78 ,  H01L23/532 ,  H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/417 ,  H01L21/285

CPC classification number: H01L21/76886 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/092 ,  H01L29/41766 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure.

Abstract translation: 接触开口形成为露出半导体衬底的表面部分的电介质材料。 然后在每个接触开口中和界面氧化物层的暴露表面部分上形成界面氧化物层。 在每个开口内和每个界面氧化物层的暴露的表面部分上形成NiPt合金层。 然后进行退火，其形成从底部到顶部具有倒金字塔形状，富Pt硅化物帽区域和富氧区域的二硅化镍合金体的接触结构。 然后在每个接触开口内和每个接触结构的富氧区顶上形成金属接触。

公开(公告)号：US20130175547A1

公开(公告)日：2013-07-11

申请号：US13783526

申请日：2013-03-04

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Kevin K. Chan ,  Abhishek Dube ,  Eric C. Harley ,  Judson R. Holt ,  Viorel C. Ontalus ,  Kathryn T. Schonenberg ,  Matthew W. Stoker ,  Keith H. Tabakman ,  Linda R. Black

IPC: H01L29/78

CPC classification number: H01L29/7848 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78618 ,  H01L29/78684

Abstract: A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material.

Abstract translation: 一种用于形成场效应晶体管器件的方法，包括：在衬底上形成栅极叠层部分，在栅堆叠部分和衬底的一部分上形成间隔部分，去除衬底的暴露部分，将第一硅材料外延生长 衬底的暴露部分，去除外延生长的第一硅材料的一部分以暴露衬底的第二部分，以及在衬底的暴露的第二部分和第一硅材料上外延生长第二硅材料。