公开(公告)号：US09812400B1

公开(公告)日：2017-11-07

申请号：US15154367

申请日：2016-05-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Veeraraghavan S. Basker ,  Keith H. Tabakman ,  Patrick D. Carpenter ,  Guillaume Bouche ,  Michael V. Aquilino

IPC: H01L29/40 ,  H01L29/66 ,  H01L21/336 ,  H01L23/535 ,  H01L29/78 ,  H01L29/417 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76816 ,  H01L21/76841 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a contact line being disposed within a dielectric layer and providing electrical connection to source/drain epitaxial regions surrounding a set of fins, the contact line including: a first portion of the contact line electrically isolated from a second portion of the contact line by a contact line spacer, wherein the first portion and the second portion each include a liner layer and a metal, the liner layer separating the metal from the dielectric layer and the source/drain epitaxial regions, and wherein the metal is directly in contact with the contact line spacer.

公开(公告)号：US20130175547A1

公开(公告)日：2013-07-11

申请号：US13783526

申请日：2013-03-04

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Kevin K. Chan ,  Abhishek Dube ,  Eric C. Harley ,  Judson R. Holt ,  Viorel C. Ontalus ,  Kathryn T. Schonenberg ,  Matthew W. Stoker ,  Keith H. Tabakman ,  Linda R. Black

IPC: H01L29/78

CPC classification number: H01L29/7848 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78618 ,  H01L29/78684

Abstract: A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material.

Abstract translation: 一种用于形成场效应晶体管器件的方法，包括：在衬底上形成栅极叠层部分，在栅堆叠部分和衬底的一部分上形成间隔部分，去除衬底的暴露部分，将第一硅材料外延生长 衬底的暴露部分，去除外延生长的第一硅材料的一部分以暴露衬底的第二部分，以及在衬底的暴露的第二部分和第一硅材料上外延生长第二硅材料。