公开(公告)号：US20150279684A1

公开(公告)日：2015-10-01

申请号：US14225542

申请日：2014-03-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Andy Chih-Hung Wei ,  Dae-han Choi ,  Dae Geun Yang ,  Xiang Hu ,  Mariappan Hariharaputhiran

IPC: H01L21/308 ,  H01L29/66 ,  H01L21/762 ,  H01L21/311 ,  H01L21/306

CPC classification number: H01L27/0886 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0332 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/475 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/785

Abstract: Embodiments of the present invention provide methods of removing fin portions from a finFET. At a starting point, a high-K dielectric layer is disposed on a substrate. A fin hardmask and lithography stack is deposited on the high-k dielectric. A fin hardmask is exposed, and a first portion of the fin hardmark is removed. The lithography stack is removed. A second portion of the fin hardmask is removed. Fins are formed. A gap fill dielectric is deposited and recessed.

Abstract translation: 本发明的实施例提供了从finFET去除翅片部分的方法。 在起始点，高K电介质层设置在基板上。 翅片硬掩模和光刻叠层沉积在高k电介质上。 翅片硬掩模被暴露，并且鳍状硬标记的第一部分被去除。 去除光刻叠层。 拆下散热片硬掩模的第二部分。 鳍形成。 间隙填充电介质被沉积并凹进。