公开(公告)号：US20150054083A1

公开(公告)日：2015-02-26

申请号：US14502428

申请日：2014-09-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Stephan Kronholz ,  Maciej Wiatr

IPC: H01L29/78 ,  H01L27/12

CPC classification number: H01L29/7849 ,  H01L21/823412 ,  H01L21/823807 ,  H01L27/1203 ,  H01L27/20 ,  H01L29/7843

Abstract: An efficient strain-inducing mechanism may be provided on the basis of a piezoelectric material so that performance of different transistor types may be enhanced by applying a single concept. For example, a piezoelectric material may be provided below the active region of different transistor types and may be appropriately connected to a voltage source so as to obtain a desired type of strain.

Abstract translation: 可以基于压电材料提供有效的应变诱导机构，从而通过应用单个概念可以提高不同晶体管类型的性能。 例如，压电材料可以设置在不同晶体管类型的有源区的下方，并且可以适当地连接到电压源，以便获得期望的类型的应变。

公开(公告)号：US08722481B2

公开(公告)日：2014-05-13

申请号：US13909221

申请日：2013-06-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Stephan-Detlef Kronholz ,  Peter Javorka ,  Maciej Wiatr

IPC: H01L21/336 ,  H01L21/8234

CPC classification number: H01L22/10 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/7848 ,  Y02P80/30

Abstract: When forming high-k metal gate electrode structures in a semiconductor device on the basis of a basic transistor design, undue exposure of sensitive materials at end portions of the gate electrode structures of N-channel transistors may be avoided, for instance, prior to and upon incorporating a strain-inducing semiconductor material into the active region of P-channel transistors, thereby contributing to superior production yield for predefined transistor characteristics and performance.

Abstract translation: 在基于晶体管的基础上在半导体器件中形成高k金属栅极电极结构时，可以避免在N沟道晶体管的栅电极结构的端部处敏感材料的过度曝光，例如，在 在将应变诱导半导体材料并入P沟道晶体管的有源区域中，从而有助于提高预定晶体管特性和性能的产量。