公开(公告)号：US09536989B1

公开(公告)日：2017-01-03

申请号：US15043917

申请日：2016-02-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Viorel Ontalus ,  Annie Lévesque

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/66 ,  H01L29/78 ,  H01L21/225 ,  H01L21/324 ,  H01L29/417

CPC classification number: H01L29/66795 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/324 ,  H01L29/785

Abstract: Device structures and fabrication methods for a fin-type field-effect transistor. A first fin and a second fin are formed that are comprised of a semiconductor material that is single crystal. The first fin has a sidewall facing a sidewall of the second fin. A portion of a source/drain region of the first fin is damaged to form a damage region in the portion of the first fin. After the damage region is formed, a section of a semiconductor layer is epitaxially grown from the sidewall of the first fin in the source/drain region. The semiconductor material in the damage region has a level of crystalline disorder that is greater than a level of crystalline disorder of the semiconductor material in a portion of the first fin that is not damaged.

Abstract translation: 鳍式场效应晶体管的器件结构和制造方法。 形成由单晶半导体材料构成的第一鳍片和第二鳍片。 第一翅片具有面向第二翅片的侧壁的侧壁。 第一翅片的源极/漏极区域的一部分被损坏以在第一鳍片的部分中形成损伤区域。 在形成损伤区域之后，从源极/漏极区域中的第一鳍片的侧壁外延生长半导体层的一部分。 损伤区域中的半导体材料具有比未被损坏的第一鳍片的部分中的半导体材料的晶体混乱程度大的结晶失效水平。