公开(公告)号：US11127843B2

公开(公告)日：2021-09-21

申请号：US16733528

申请日：2020-01-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson Holt ,  Alexander Derrickson ,  Ryan Sporer ,  George R. Mulfinger ,  Alexander Martin ,  Jagar Singh

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/66 ,  H01L21/3065 ,  H01L29/10

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A base layer is positioned in a cavity in a semiconductor layer, a first terminal is coupled to the base layer, and a second terminal is coupled to a portion of the semiconductor layer. The second terminal is laterally spaced from the first terminal, and the portion of the semiconductor layer is laterally positioned between the second terminal and the base layer.

公开(公告)号：US11094805B2

公开(公告)日：2021-08-17

申请号：US16745833

申请日：2020-01-17

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alexander Derrickson ,  Edmund K. Banghart ,  Alexander Martin ,  Ryan Sporer ,  Jagar Singh ,  Katherina Babich ,  George R. Mulfinger

IPC: H01L29/737 ,  H01L29/08 ,  H01L21/324 ,  H01L29/165 ,  H01L29/66 ,  H01L21/02 ,  H01L29/10

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first portion of a first semiconductor layer defines an emitter, a first portion of a second semiconductor layer defines a collector, and a base includes respective second portions of the first and second semiconductor layers that are laterally positioned between the first portion of the first semiconductor layer and the first portion of the second semiconductor layer. The first portion of the first semiconductor layer has a first thickness, and the first portion of the second semiconductor layer has a second thickness that is greater than the first thickness. The first portion and the second portion of the first semiconductor layer adjoin at a first junction having the first thickness. The first portion and the second portion of the second semiconductor layer adjoin at a second junction having the second thickness.

公开(公告)号：US20210091212A1

公开(公告)日：2021-03-25

申请号：US16733528

申请日：2020-01-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson Holt ,  Alexander Derrickson ,  Ryan Sporer ,  George R. Mulfinger ,  Alexander Martin ,  Jagar Singh

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/10 ,  H01L21/3065 ,  H01L29/66

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A base layer is positioned in a cavity in a semiconductor layer, a first terminal is coupled to the base layer, and a second terminal is coupled to a portion of the semiconductor layer. The second terminal is laterally spaced from the first terminal, and the portion of the semiconductor layer is laterally positioned between the second terminal and the base layer.