公开(公告)号：US08796083B2

公开(公告)日：2014-08-05

申请号：US13471799

申请日：2012-05-15

申请人： Kurt Ulmer ,  Kanan Puntambekar

发明人： Kurt Ulmer ,  Kanan Puntambekar

IPC分类号： H01L51/00 ,  H01L21/288 ,  H01L29/417

CPC分类号： H01L51/0022 ,  B82Y10/00 ,  H01L21/02628 ,  H01L21/02639 ,  H01L21/288 ,  H01L27/1292 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78696

摘要： A method is provided for controlling the channel length in a thin-film transistor (TFT). The method forms a printed ink first source/drain (S/D) structure overlying a substrate. A fluoropolymer mask is deposited to cover the first S/D structure. A boundary region is formed between the edge of the fluoropolymer mask and the edge of the printed ink first S/D structure, having a width. Then, a primary ink is printed at least partially overlying the boundary region, forming a printed ink second S/D structure, having an edge adjacent to the fluoropolymer mask edge. After removing the fluoropolymer mask, the printed ink first S/D structure edge is left separated from the printed ink second S/D structure edge by a space equal to the boundary region width. A semiconductor channel is formed partially overlying the first and second S/D structures, having a channel length equal to the boundary region width.

摘要翻译： 提供了一种用于控制薄膜晶体管（TFT）中的沟道长度的方法。 该方法形成了覆盖衬底的印刷油墨第一源极/漏极（S / D）结构。 沉积氟聚合物掩模以覆盖第一S / D结构。 在氟聚合物掩模的边缘和具有宽度的印刷油墨第一S / D结构的边缘之间形成边界区域。 然后，将至少部分地覆盖在边界区域上的初级墨水印刷，形成具有与氟聚合物掩模边缘相邻的边缘的印刷油墨第二S / D结构。 在除去含氟聚合物掩模之后，将印刷油墨第一S / D结构边缘与印刷油墨第二S / D结构边缘分开等于边界区宽度的空间。 部分地覆盖第一和第二S / D结构的半导体沟道，其沟道长度等于边界区宽度。

公开(公告)号：US08367459B2

公开(公告)日：2013-02-05

申请号：US12968102

申请日：2010-12-14

申请人： Lisa H. Stecker ,  Kanan Puntambekar ,  Kurt Ulmer

发明人： Lisa H. Stecker ,  Kanan Puntambekar ,  Kurt Ulmer

IPC分类号： H01L51/00

CPC分类号： H01L51/00 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0545 ,  H01L51/105

摘要： A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H2 or N2 plasma, a self-assembled organic monolayer is formed overlying the S/D electrodes. Finally, an active organic semiconductor layer is formed over the S/D electrodes and gate dielectric channel interface. The OTFT may be exposed to plasma either before or after the formation of the S/D electrodes.

摘要翻译： 在有机薄膜晶体管（OTFT）的制造中提供了一种制备用于沉积有机半导体材料的界面的方法。 提供衬底并且形成覆盖衬底的栅电极。 在栅电极上形成栅极电介质。 然后，源极（S）和漏极（D）电极形成在栅极电介质上方，暴露在S / D电极之间的栅介质沟道界面区域。 在将OTFT暴露于H 2或N 2等离子体之后，形成覆盖S / D电极的自组装有机单层。 最后，在S / D电极和栅介质通道界面上形成有源有机半导体层。 在形成S / D电极之前或之后，OTFT可能暴露于等离子体。

公开(公告)号：US20140183634A1

公开(公告)日：2014-07-03

申请号：US13733196

申请日：2013-01-03

申请人： Kurt Ulmer ,  Kanan Puntambekar

发明人： Kurt Ulmer ,  Kanan Puntambekar

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L21/768

CPC分类号： H01L29/66742 ,  H01L21/288 ,  H01L21/768 ,  H01L27/1292 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78696 ,  H01L51/0022

摘要： A method is provided for forming a printed top gate thin film transistor (TFT) with a short channel length. The method provides a substrate with a low surface energy top surface. A metal ink line is continuously printed across a region of the substrate top surface, and in response to the surface tension of the printed metal ink, discrete spherical ink caps are formed in the region. Then, the surface energy of the substrate top surface in the region is increased. A source metal ink line is printed overlying a source spherical ink cap contact, and a drain metal ink line, parallel to the source metal ink line, is printed overlying a drain spherical ink cap contact. After depositing a semiconductor film, a channel is formed in the semiconductor film between the source and drain spherical ink cap contacts having a channel length equal to the first distance.

摘要翻译： 提供一种用于形成具有短沟道长度的印刷顶栅薄膜晶体管（TFT）的方法。 该方法提供具有低表面能顶面的基底。 金属墨水线在衬底顶表面的区域上连续印刷，并且响应于印刷金属油墨的表面张力，在该区域中形成离散的球形油墨盖。 然后，该区域中的基板顶面的表面能增大。 源金属墨水线被印刷在源球形墨水帽接触件上方，并且平行于源极金属墨水线的漏极金属墨水线被印刷在排出的球形墨水帽接触件上。 在沉积半导体膜之后，在沟道长度等于第一距离的源极和漏极球形墨帽触点之间的半导体膜中形成沟道。

公开(公告)号：US08765224B2

公开(公告)日：2014-07-01

申请号：US13432855

申请日：2012-03-28

申请人： Kurt Ulmer ,  Kanan Puntambekar ,  Lisa H. Stecker

发明人： Kurt Ulmer ,  Kanan Puntambekar ,  Lisa H. Stecker

IPC分类号： B05D5/00

CPC分类号： B41N1/00 ,  H01L51/0005 ,  H01L51/0022 ,  H05K3/1208 ,  H05K3/125 ,  H05K2201/015 ,  H05K2203/1173 ,  H05K2203/1476

摘要： A method is provided for controlling printed ink horizontal cross-sectional areas using fluoropolymer templates. The method initially forms a fluoropolymer template overlying a substrate. The fluoropolymer template has a horizontal first cross-sectional dimension. Then, a primary ink is printed overlying the fluoropolymer template having a horizontal second cross-sectional dimension less than the first cross-sectional dimension. In the case of a fluoropolymer line having a template length greater than a template width, where the template width is the first cross-sectional dimension, printing the primary ink entails printing a primary ink line having an ink length greater than an ink width, where the ink width is the second cross-sectional dimension. In one aspect, the method prints a plurality of primary ink layers, each primary ink layer having an ink width less than the template width. Each overlying primary ink layer can be printed prior to solvents in underlying primary ink layers evaporating.

摘要翻译： 提供了一种使用氟聚合物模板控制印刷油墨水平横截面积的方法。 该方法最初形成覆盖在基底上的氟聚合物模板。 氟聚合物模板具有水平的第一横截面尺寸。 然后，将初级墨水印刷在具有小于第一横截面尺寸的水平第二横截面尺寸的含氟聚合物模板上。 在具有模板长度大于模板宽度的含氟聚合物线的情况下，其中模板宽度是第一横截面尺寸，打印初级墨水需要打印墨水长度大于墨水宽度的主墨水线，其中 油墨宽度是第二横截面尺寸。 在一个方面，该方法印刷多个主油墨层，每个主油墨层的油墨宽度小于模板宽度。 每个上覆的初级墨水层可以在溶剂之前被打印在基本的主油墨层中蒸发。