Exposure scan and step direction optimization
    12.
    发明授权
    Exposure scan and step direction optimization 有权
    曝光扫描和步进方向优化

    公开(公告)号:US07666576B2

    公开(公告)日:2010-02-23

    申请号:US11461234

    申请日:2006-07-31

    IPC分类号: G03F7/20

    CPC分类号: G03B27/42 G03F7/70466

    摘要: A lithography process to pattern a plurality of fields on a substrate is disclosed. The process includes scanning a first field along a first direction using a radiation beam. Thereafter, the processes steps to a second field adjacent the first field and located behind the first field when the first and second fields are viewed along the first direction. The second field is then scanned along the first direction using the radiation beam.

    摘要翻译: 公开了一种用于对衬底上的多个场进行图案化的光刻工艺。 该过程包括使用辐射束沿第一方向扫描第一场。 此后,当沿着第一方向观察第一和第二场时,处理步骤到与第一场相邻并位于第一场后面的第二场。 然后使用辐射束沿着第一方向扫描第二场。