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13 条记录 (耗时 0.024 秒)

    Exposure scan and step direction optimization
    1.
    发明授权
    Exposure scan and step direction optimization 有权
    曝光扫描和步进方向优化

    公开(公告)号：US07666576B2

    公开(公告)日：2010-02-23

    申请号：US11461234

    申请日：2006-07-31

    申请人： Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Burn Jeng Lin

    发明人： Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Burn Jeng Lin

    IPC分类号： G03F7/20

    CPC分类号： G03B27/42 ,  G03F7/70466

    摘要： A lithography process to pattern a plurality of fields on a substrate is disclosed. The process includes scanning a first field along a first direction using a radiation beam. Thereafter, the processes steps to a second field adjacent the first field and located behind the first field when the first and second fields are viewed along the first direction. The second field is then scanned along the first direction using the radiation beam.

    摘要翻译： 公开了一种用于对衬底上的多个场进行图案化的光刻工艺。 该过程包括使用辐射束沿第一方向扫描第一场。 此后，当沿着第一方向观察第一和第二场时，处理步骤到与第一场相邻并位于第一场后面的第二场。 然后使用辐射束沿着第一方向扫描第二场。

    Hood for immersion lithography
    2.
    发明授权
    Hood for immersion lithography 有权
    用于浸没光刻的罩

    公开(公告)号：US07675604B2

    公开(公告)日：2010-03-09

    申请号：US11427434

    申请日：2006-06-29

    申请人： Li-Jui Chen ,  Tzung-Chi Fu ,  Ching-Yu Chang ,  Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau

    发明人： Li-Jui Chen ,  Tzung-Chi Fu ,  Ching-Yu Chang ,  Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau

    IPC分类号： G03B27/52 ,  G03B27/42

    CPC分类号： G03F7/70341

    摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least two of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.

    摘要翻译： 光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 流体保持模块，被配置为将流体保持在所述成像透镜模块和所述基板载台上的基板之间的空间中; 以及配置在所述流体保持模块中且与所述空间相邻的加热元件。 所述加热元件包括以下至少两个：对所述流体不溶的密封剂，用于密封所述流体保持模块中的所述加热元件; 密封开口，其构造在流体保持模块的顶部和侧部之一中，用于密封流体保持模块中的加热元件; 和/或配置有加热元件的不均匀的温度补偿装置。

    METHOD AND APPARATUS OF PROVIDING OVERLAY
    4.
    发明申请
    METHOD AND APPARATUS OF PROVIDING OVERLAY 有权
    提供覆盖的方法和装置

    公开(公告)号：US20110133347A1

    公开(公告)日：2011-06-09

    申请号：US12631591

    申请日：2009-12-04

    申请人： Guo-Tsai Huang ,  Fu-Jye Liang ,  Li-Jui Chen ,  Chih-Ming Ke

    发明人： Guo-Tsai Huang ,  Fu-Jye Liang ,  Li-Jui Chen ,  Chih-Ming Ke

    IPC分类号： H01L23/544 ,  H01L21/64

    CPC分类号： G03F7/70283 ,  G03F7/70633 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.

    摘要翻译： 提供了一种包括重叠标记的装置。 覆盖标记包括包括多个第一特征的第一部分。 每个第一特征具有在第一方向上测量的第一尺寸和在大致垂直于第一方向的第二方向上测量的第二尺寸。 第二维度大于第一维度。 覆盖标记还包括包括多个第二特征的第二部分。 每个第二特征具有在第一方向上测量的第三尺寸，并且在第二方向上测量第四尺寸。 第四个维度小于第三个维度。 第二特征中的至少一个在第一和第二方向上被多个第一特征部分地包围。

    System and method for lithography patterning
    5.
    发明授权
    System and method for lithography patterning 有权
    光刻图案的系统和方法

    公开(公告)号：US09360778B2

    公开(公告)日：2016-06-07

    申请号：US13411245

    申请日：2012-03-02

    申请人： Li-Jui Chen ,  Fu-Jye Liang ,  Hsueh-Hung Wu

    发明人： Li-Jui Chen ,  Fu-Jye Liang ,  Hsueh-Hung Wu

    IPC分类号： G03B27/42 ,  G03B27/58 ,  G03B27/32 ,  G03F9/00

    CPC分类号： G03F9/7096 ,  G03F9/7019

    摘要： Disclosed is a lithography system. The lithography system includes a lithography exposure tool designed for performing an exposure process to a radiation-sensitive material layer coated on an integrated circuit substrate; an alignment module coupled with the lithography exposure tool, designed for alignment measurement, and configured for transferring the integrated circuit substrate to the lithography exposure tool; and an alignment calibration module designed to calibrate the alignment module relative to the lithography exposure.

    摘要翻译： 公开了一种光刻系统。 光刻系统包括设计用于对涂覆在集成电路基板上的辐射敏感材料层进行曝光处理的光刻曝光工具; 与光刻曝光工具耦合的对准模块，设计用于对准测量，并且被配置为将集成电路基板传送到光刻曝光工具; 以及设计用于相对于光刻曝光校准对准模块的对准校准模块。

    METHOD AND APPARATUS FOR MAINTAINING DEPTH OF FOCUS
    6.
    发明申请
    METHOD AND APPARATUS FOR MAINTAINING DEPTH OF FOCUS 有权
    维持聚焦深度的方法和装置

    公开(公告)号：US20110267593A1

    公开(公告)日：2011-11-03

    申请号：US12772647

    申请日：2010-05-03

    申请人： Chang-Tsun Hsieh ,  Fu-Jye Liang ,  Tzung-Chi Fu ,  Li-Jui Chen ,  Chih-Ming Ke

    发明人： Chang-Tsun Hsieh ,  Fu-Jye Liang ,  Tzung-Chi Fu ,  Li-Jui Chen ,  Chih-Ming Ke

    IPC分类号： G03B27/53 ,  G01J3/28

    CPC分类号： G03F7/70616 ,  G02B7/28 ,  G03F7/70575 ,  G03F7/70641 ,  G03F9/70 ,  G03F9/7026

    摘要： A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.

    摘要翻译： 一种方法包括将辐射束沿着光轴引向工件支撑件，在第一时间测量光束的光谱以获得第一分布，在第二时间测量光束的光谱以获得第二分布，确定 两个轮廓之间的光谱差异，并且基于该差异来调整沿着光轴的工件支撑件的位置。 不同的方面涉及一种具有工件支撑件的装置，将导光束沿着光轴朝向工件支撑件的光束引导结构，光谱测量结构，其在第一次和第二次测量光束的光谱以获得相应的第一和第二 轮廓，确定两个轮廓之间的差异的处理结构，以及基于该差异来调整沿着光轴的工件支撑件的位置的支撑调整结构。

    Pattern compensation for stitching
    8.
    发明授权
    Pattern compensation for stitching 失效
    拼接图案补偿

    公开(公告)号：US06982135B2

    公开(公告)日：2006-01-03

    申请号：US10402590

    申请日：2003-03-28

    申请人： Chung-Hsing Chang ,  Chien-Hung Lin ,  Burn J. Lin ,  Chia-Hui Lin ,  Chih-Cheng Chin ,  Chin-Hsiang Lin ,  Fu-Jye Liang ,  Jeng-Horng Chen ,  Bang-Ching Ho

    发明人： Chung-Hsing Chang ,  Chien-Hung Lin ,  Burn J. Lin ,  Chia-Hui Lin ,  Chih-Cheng Chin ,  Chin-Hsiang Lin ,  Fu-Jye Liang ,  Jeng-Horng Chen ,  Bang-Ching Ho

    IPC分类号： G03F9/00 ,  G03F7/20

    CPC分类号： G03F1/20 ,  G03B27/42 ,  G03F1/00 ,  G03F7/70475

    摘要： A method for transferring a pattern from a mask to a substrate (or wafer), comprises dividing a mask generation data file into a plurality of segments. The segments include a main pattern area and a stitching area. Each stitching area contains a respective common pattern. An image of an illuminated portion of the main pattern area is formed. Connection ends of the segments in a substrate area (or wafer area) are illuminated with an illumination beam. An image of the illuminated portion of the main pattern area is formed, and a halftone gray level dosage distribution is produced in the substrate area (or wafer area) corresponding to the common pattern. The common patterns of adjacent segments substantially overlap in the substrate area (or wafer area).

    摘要翻译： 将图案从掩模转印到基板（或晶片）的方法包括将掩模生成数据文件分割成多个段。 片段包括主图案区域和缝合区域。 每个缝合区域包含各自的共同图案。 形成主图案区域的照明部分的图像。 衬底区域（或晶片区域）中的段的连接端用照明光束照射。 形成主图案区域的照明部分的图像，并且在对应于共同图案的基板区域（或晶片区域）中产生半色调灰度级剂量分布。 相邻段的共同图案在衬底区域（或晶片区域）中基本上重叠。

    SYSTEM AND METHOD FOR LITHOGRAPHY PATTERNING
    10.
    发明申请
    SYSTEM AND METHOD FOR LITHOGRAPHY PATTERNING 有权
    系统和方法进行图像绘制

    公开(公告)号：US20130229638A1

    公开(公告)日：2013-09-05

    申请号：US13411245

    申请日：2012-03-02

    申请人： Li-Jui Chen ,  Fu-Jye Liang ,  Hsueh-Hung Wu

    发明人： Li-Jui Chen ,  Fu-Jye Liang ,  Hsueh-Hung Wu

    IPC分类号： G03B27/42

    CPC分类号： G03F9/7096 ,  G03F9/7019

    摘要： Disclosed is a lithography system. The lithography system includes a lithography exposure tool designed for performing an exposure process to a radiation-sensitive material layer coated on an integrated circuit substrate; an alignment module coupled with the lithography exposure tool, designed for alignment measurement, and configured for transferring the integrated circuit substrate to the lithography exposure tool; and an alignment calibration module designed to calibrate the alignment module relative to the lithography exposure.

    摘要翻译： 公开了一种光刻系统。 光刻系统包括设计用于对涂覆在集成电路基板上的辐射敏感材料层进行曝光处理的光刻曝光工具; 与光刻曝光工具耦合的对准模块，设计用于对准测量，并且被配置为将集成电路基板传送到光刻曝光工具; 以及设计用于相对于光刻曝光校准对准模块的对准校准模块。