公开(公告)号：US08884394B2

公开(公告)日：2014-11-11

申请号：US13644605

申请日：2012-10-04

Applicant: Hamamatsu Photonics K.K.

Inventor： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

IPC: H01L31/0224

CPC classification number: G01C3/08 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14641

Abstract: A signal charge collecting region is disposed inside a charge generating region so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. An unnecessary charge collecting region is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A transfer electrode is disposed between the signal charge collecting region and the charge generating region, and causes the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal. An unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the unnecessary charge collecting region in response to an input signal.

Abstract translation: 信号电荷收集区域设置在电荷产生区域内，以被电荷产生区域包围，并从电荷产生区域收集信号电荷。 不必要的电荷收集区域设置在电荷产生区域外部，以便围绕电荷产生区域，并从电荷产生区域收集不必要的电荷。 转移电极设置在信号电荷收集区域和电荷产生区域之间，并且响应于输入信号使来自电荷产生区域的信号电荷流入信号电荷收集区域。 不必要的电荷收集栅电极设置在不需要的电荷收集区域和电荷产生区域之间，并且响应于输入信号使来自电荷产生区域的不必要的电荷流入不需要的电荷收集区域。

公开(公告)号：US20130221472A1

公开(公告)日：2013-08-29

申请号：US13644605

申请日：2012-10-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Takashi Suzuki ,  Jun Hiramitsu

IPC: H01L31/0224

CPC classification number: G01C3/08 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14641

Abstract: A signal charge collecting region is disposed inside a charge generating region so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. An unnecessary charge collecting region is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A transfer electrode is disposed between the signal charge collecting region and the charge generating region, and causes the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal. An unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the unnecessary charge collecting region in response to an input signal.

Abstract translation: 信号电荷收集区域设置在电荷产生区域内，以被电荷产生区域包围，并从电荷产生区域收集信号电荷。 不必要的电荷收集区域设置在电荷产生区域外部，以便围绕电荷产生区域，并从电荷产生区域收集不必要的电荷。 转移电极设置在信号电荷收集区域和电荷产生区域之间，并且响应于输入信号使来自电荷产生区域的信号电荷流入信号电荷收集区域。 不必要的电荷收集栅电极设置在不需要的电荷收集区域和电荷产生区域之间，并且响应于输入信号使来自电荷产生区域的不必要的电荷流入不需要的电荷收集区域。

公开(公告)号：US11156700B2

公开(公告)日：2021-10-26

申请号：US16097664

申请日：2017-04-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akihiro Shimada ,  Mitsuhito Mase ,  Jun Hiramitsu ,  Takashi Suzuki

IPC: H01L27/14 ,  G01S7/486 ,  H04N5/369 ,  G01S7/481 ,  G01S17/10 ,  H01L27/144 ,  G01S17/89

Abstract: The present embodiment relates to a distance sensor that reduces a difference in amounts of current injected into each of plural charge collection regions prepared for one photosensitive region in order to avoid saturation caused by disturbance light. A current injection circuit injecting current into each charge collection region includes a voltage generation circuit generating a control voltage for adjustment of the injected current amount, and the voltage generation circuit generates the control voltage corresponding to a large amount of charge between the charge amounts of storage nodes coupled, respectively, to the charge collection regions. Meanwhile, a cascode device is disposed between a transistor configured to adjust the amount of current according to the control voltage and the storage node, and a potential of a current output end of the transistor and a potential of the storage node are separated.

公开(公告)号：US20150287587A1

公开(公告)日：2015-10-08

申请号：US14437236

申请日：2013-09-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshinori Honda ,  Hiroyuki Taketomi ,  Fumitsugu Fukuyo ,  Koji Kawai ,  Hidetsugu Takaoka ,  Takashi Suzuki

IPC: H01J63/06 ,  B05D5/06

CPC classification number: H01J63/06 ,  B05D5/061 ,  C09K11/7774 ,  C09K2211/1416 ,  H01J9/221

Abstract: A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light UV in response to an electron beam. The light-emitting layer includes a powdery or granular rare-earth-containing aluminum garnet crystal doped with an activator. The light-emitting layer has an ultraviolet light emission peak wavelength of 300 nm or shorter.

Abstract translation: 紫外光产生的目标包括适于透射紫外光的基板和设置在基板上的发光层，并响应于电子束产生紫外光UV。 发光层包含掺杂有活化剂的粉状或颗粒状含稀土的铝石榴石晶体。 发光层的紫外发光峰值波长为300nm以下。