公开(公告)号：US09436988B2

公开(公告)日：2016-09-06

申请号：US14325802

申请日：2014-07-08

Applicant: Hermes-Microvision, Inc.

Inventor： Wei Fang ,  Zhaoli Zhang ,  Jack Jau

IPC: G06K9/00 ,  G06T7/00

CPC classification number: G06T7/0008 ,  G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.

Abstract translation: 提供了在具有相同芯片和相应系统的晶片上分类缺陷的方法。 在接收到通过使用带电粒子束扫描晶片形成的图像之后，检查这些图像，使得发现缺陷图像和无缺陷图像。 然后，将无缺陷图像转换为芯片的模拟布局，或者使用数据库来提供芯片的模拟布局。 最后，通过将图像与芯片的模拟布局进行比较来分类缺陷图像上的缺陷。 系统有一些模块分别对应于该方法的步骤。

公开(公告)号：US09330987B2

公开(公告)日：2016-05-03

申请号：US14481247

申请日：2014-09-09

Applicant: Hermes-Microvision, Inc.

Inventor： Steve Lin ,  Wei Fang ,  Eric Ma ,  Zhonghua Dong ,  Jon Chiang ,  Yan Zhao ,  Chester Kuo ,  Zhongwei Chen

IPC: H01J37/26 ,  H01L21/00 ,  G03F7/00 ,  H01L21/66 ,  G03F7/20 ,  G03F1/86

CPC classification number: H01L22/12 ,  G03F1/86 ,  G03F7/7065 ,  H01J2237/103 ,  H01J2237/221 ,  H01J2237/2817

Abstract: A method for identifying, inspecting, and reviewing all hot spots on a specimen is disclosed by using at least one SORIL e-beam tool. A full die on a semiconductor wafer is scanned by using a first identification recipe to obtain a full die image of that die and then design layout data is aligned and compared with the full die image to identify hot spots on the full die. Threshold levels used to identify hot spots can be varied and depend on the background environments close thereto, materials of the specimens, defect types, and design layout data. A second recipe is used to selectively inspect locations of all hot spots to identify killers, and then killers can be reviewed with a third recipe.

Abstract translation: 通过使用至少一个SORIL电子束工具来公开用于识别，检查和检查试样上的所有热点的方法。 通过使用第一识别配方扫描半导体晶片上的全裸片以获得该裸片的完整裸片图像，然后将设计布局数据对准并与全裸片图像进行比较，以识别全裸片上的热点。 用于识别热点的阈值水平可以变化并且取决于靠近的背景环境，样本的材料，缺陷类型和设计布局数据。 使用第二个方法来选择性地检查所有热点的位置以识别杀手，然后用第三个配方来检查杀手。

公开(公告)号：US09100553B2

公开(公告)日：2015-08-04

申请号：US13785256

申请日：2013-03-05

Applicant: HERMES MICROVISION INC.

Inventor： Wei Fang ,  Jack Jau ,  Hong Xiao

IPC: H04N7/18 ,  G06T7/00

CPC classification number: H04N7/18 ,  G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/20016 ,  G06T2207/30148 ,  H04N7/183

Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

Abstract translation: 用于测量临界尺寸（CD）的方法包括以下步骤：扫描模具的至少一个感兴趣区域以获得至少一个扫描图像; 将扫描图像对准至少一个设计的布局图案，以识别扫描图像内的多个边界; 以及从与设计的布局图案对应的特定类型的CD相关联的图案的边界或多个边界测量的平均距离，以获得模具的CD的值。 可以通过相对较高的扫描速度获得的具有较低分辨率的扫描图像获得模具的临界尺寸的值，因此上述方法可以获得整个晶片内每个管芯的CD值，以监测半导体的均匀性 制造过程在可接受的检验时间内。

公开(公告)号：US20150069232A1

公开(公告)日：2015-03-12

申请号：US14481247

申请日：2014-09-09

Applicant: Hermes-Microvision, Inc.

Inventor： Steve Lin ,  Wei Fang ,  Eric Ma ,  Zhonghua Dong ,  Jon Chiang ,  Yan Zhao ,  Chester Kuo ,  Zhongwei Chen

IPC: H01J37/28 ,  H01J37/26

CPC classification number: H01L22/12 ,  G03F1/86 ,  G03F7/7065 ,  H01J2237/103 ,  H01J2237/221 ,  H01J2237/2817

Abstract: A method for identifying, inspecting, and reviewing all hot spots on a specimen is disclosed by using at least one SORIL e-beam tool. A full die on a semiconductor wafer is scanned by using a first identification recipe to obtain a full die image of that die and then design layout data is aligned and compared with the full die image to identify hot spots on the full die. Threshold levels used to identify hot spots can be varied and depend on the background environments close thereto, materials of the specimens, defect types, and design layout data. A second recipe is used to selectively inspect locations of all hot spots to identify killers, and then killers can be reviewed with a third recipe.

Abstract translation: 通过使用至少一个SORIL电子束工具来公开用于识别，检查和检查试样上的所有热点的方法。 通过使用第一识别配方扫描半导体晶片上的全裸片以获得该裸片的完整裸片图像，然后将设计布局数据对准并与全裸片图像进行比较，以识别全裸片上的热点。 用于识别热点的阈值水平可以变化并且取决于靠近的背景环境，样本的材料，缺陷类型和设计布局数据。 使用第二个方法来选择性地检查所有热点的位置以识别杀手，然后用第三个配方来检查杀手。