公开(公告)号：US20170301509A1

公开(公告)日：2017-10-19

申请号：US15165658

申请日：2016-05-26

Applicant: DONGFANG JINGYUAN ELECTRON LIMITED

Inventor： Weimin Ma ,  Weiqiang Sun

IPC: H01J37/20 ,  H01J37/18

CPC classification number: H01J37/20 ,  G03F1/86 ,  G03F7/7065 ,  H01J37/18 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/063 ,  H01J2237/18 ,  H01J2237/2002 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/20292 ,  H01J2237/24571 ,  H01J2237/2817 ,  H01L22/12

Abstract: Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, columns of sensing mechanism are configured with different functions, weights and performances to inspect a sample to significantly reduce the time that would be otherwise needed when all the columns were equally applied.

公开(公告)号：US09431212B2

公开(公告)日：2016-08-30

申请号：US13701286

申请日：2011-04-29

Applicant: Markus Waiblinger ,  Michael Budach ,  Thomas Scherübl ,  Dirk Beyer

Inventor： Markus Waiblinger ,  Michael Budach ,  Thomas Scherübl ,  Dirk Beyer

IPC: G01N23/00 ,  H01J37/28 ,  G01N23/22 ,  G01N23/225 ,  G03F1/86 ,  G03F1/24

CPC classification number: H01J37/28 ,  G01N23/2208 ,  G01N23/2251 ,  G01N2223/072 ,  G01N2223/079 ,  G03F1/24 ,  G03F1/86

Abstract: The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.

Abstract translation: 本发明涉及一种用于在曝光波长处确定光刻掩模的性能的方法，其步骤是扫描至少一个电子束穿过光刻掩模的至少一部分，测量由至少一个电子束产生的信号与 光刻掩模的至少一部分，并且基于测量的信号确定曝光波长处的光刻掩模的至少一部分的性能。

公开(公告)号：US09053286B1

公开(公告)日：2015-06-09

申请号：US14225371

申请日：2014-03-25

Applicant: Synopsys, Inc.

Inventor： Daniel Salazar ,  John Valadez

IPC: G06F17/50 ,  G03F1/36 ,  G03F7/20 ,  G03F1/00

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F1/86 ,  G03F7/705 ,  G06F17/5068 ,  G06F2217/06

Abstract: Fractured mask data in variable shape beam format is verified. The fractured mask data and unfractured design data from which the fractured mask data was generated is received, as is at least one control parameter related to the fractured mask data. A filter algorithm is performed with the at least one control parameter as an input. The filter algorithm identifies at least one error in the fractured mask data as compared to the unfractured design data other than approximation differences resulting from a fracture algorithm used to generate the fractured mask data. The at least one error includes an edge shift in the fractured mask data as compared to the unfractured design data that is smaller than a defined value, such as the maximum skew value in certain examples.

Abstract translation: 验证了可变形波束格式的破裂掩模数据。 接收断裂的掩模数据和产生断裂的掩模数据的未受损设计数据，以及与断裂的掩模数据相关的至少一个控制参数。 以至少一个控制参数作为输入执行滤波算法。 与除了用于产生断裂掩模数据的断裂算法产生的近似差异以外的未折射设计数据相比，滤波器算法识别断裂掩模数据中的至少一个误差。 与未确定的设计数据相比，至少一个误差包括断裂的掩模数据中的边缘偏移，该设计数据比定义的值例如某些示例中的最大倾斜值。

公开(公告)号：US08873830B2

公开(公告)日：2014-10-28

申请号：US13427206

申请日：2012-03-22

Applicant: Eiji Yamanaka

Inventor： Eiji Yamanaka

IPC: G06K9/00 ,  G06T7/00 ,  G03F1/86

CPC classification number: G03F1/86 ,  G06T7/0004 ,  G06T7/13 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: According to one embodiment, a method includes acquiring information about a two-dimensional distribution of secondary electron intensity for a measurement target pattern, extracting, by a first method, an edge position of an edge for correction value acquisition, extracting, by a second method, an edge position of the edge for correction value acquisition, acquiring a difference between the edge positions extracted by the first and second methods, as a correction value, extracting, by the second method, an edge position of a desired edge based on the information about the two-dimensional distribution, and correcting the edge position of the desired edge based on the correction value.

Abstract translation: 根据一个实施例，一种方法包括获取关于测量目标图案的二次电子强度的二维分布的信息，通过第一方法提取用于校正值获取的边缘的边缘位置，通过第二方法提取 ，用于校正值获取的边缘的边缘位置，获取通过第一和第二方法提取的边缘位置之间的差作为校正值，基于该信息，通过第二方法提取期望边缘的边缘位置 关于二维分布，并且基于校正值来校正期望边缘的边缘位置。

公开(公告)号：US20140165236A1

公开(公告)日：2014-06-12

申请号：US14137731

申请日：2013-12-20

Applicant: Carl Zeiss SMS GmbH

Inventor： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

IPC: G01Q30/02

CPC classification number: G01Q30/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/22 ,  G03F1/84 ,  G03F1/86

Abstract: The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data.

Abstract translation: 本发明涉及用于分析包括至少一个基底和至少一个多层结构的用于极紫外波长范围的光学元件的缺陷的方法，所述方法包括以下步骤：（a）通过曝光来确定第一数据 （b）通过用扫描探针显微镜扫描缺陷来确定第二数据，（c）通过用扫描粒子显微镜扫描缺陷来确定第三数据，以及（d）将第一数据， 第二和第三个数据。

公开(公告)号：US08481936B2

公开(公告)日：2013-07-09

申请号：US13348813

申请日：2012-01-12

Applicant: Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto

Inventor： Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto

IPC: H01J37/26

CPC classification number: G03F1/84 ,  G03F1/86 ,  G03F7/70625

Abstract: The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

Abstract translation: 本发明提供一种扫描电子显微镜系统，其适于输出与样品的实际图案边缘端相匹配的轮廓信息，并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘，通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联，以横截面形状获得边缘端配件的位置坐标，并将图案的轮廓作为位置坐标的范围输出。

公开(公告)号：US08368018B2

公开(公告)日：2013-02-05

申请号：US12506475

申请日：2009-07-21

Applicant: Masahiro Hatakeyama ,  Takumi Ota

Inventor： Masahiro Hatakeyama ,  Takumi Ota

IPC: G01N23/00

CPC classification number: H01J37/26 ,  G03F1/86 ,  H01J2237/0047 ,  H01J2237/2817 ,  H01L21/67213 ,  H01L22/12

Abstract: A charged particle beam inspection apparatus comprises: an electron gun for irradiating an electron beam onto a sample; a detector for detecting a signal obtained from the sample; an image processor for forming an image from the signal obtained from the detector, and an energy controller for controlling the beam energy of the electron beam to be irradiated onto the sample. An identical charged particle beam inspection apparatus carries out a plurality of types of inspections. An inspection apparatus of a projection type may be applied thereto. A pattern defect inspection, a foreign material inspection, and an inspection for a defect in a multilayer are carried out. Beam energies E1, E2, and E3 in those inspections have a relation E1>E2 and E3>E2. Charge removal is performed in a transport chamber or other vacuum chamber before an inspection.

Abstract translation: 带电粒子束检查装置包括：用于将电子束照射到样品上的电子枪; 用于检测从样品获得的信号的检测器; 用于根据从检测器获得的信号形成图像的图像处理器，以及用于控制待照射到样品上的电子束的束能量的能量控制器。 相同的带电粒子束检查装置执行多种类型的检查。 可以对投影型的检查装置施加。 进行图案缺陷检查，异物检查和多层的缺陷检查。 这些检查中的能量E1，E2和E3具有E1> E2和E3> E2的关系。 在检查之前，在运输室或其他真空室中进行除电。

公开(公告)号：US20120290990A1

公开(公告)日：2012-11-15

申请号：US13519356

申请日：2010-12-01

Applicant: Yasutaka Toyoda ,  Ryoichi Matsuoka

Inventor： Yasutaka Toyoda ,  Ryoichi Matsuoka

IPC: G06F17/50

CPC classification number: G03F1/86

Abstract: When setting a measurement position, on the basis of a defect coordinate, on a sample, which is arranged with a complex pattern or a plurality of patterns and which has a pattern in which the influence of the optical proximity effect needs to be evaluated, the measurement position is set so as to improve work efficiency. Provided is a device for setting a first measurement position and a second measurement position, wherein: a reference line comprising a plurality of line segments is superimposed on a two-dimensional region set by a pattern layout data; the first measurement position is set on the inside of a contour which indicates a pattern in which a defect coordinate on the layout data exists, and between the intersecting points of the reference line and said contour; and a second measurement position is set outside of said contour, and either on said contour and another portion of said contour or between the intersecting points of said contour and another portion of said contour.

Abstract translation: 当基于缺陷坐标设置测量位置时，在以复数图案或多个图案布置并且具有需要评估光学邻近效应的影响的图案的样本上， 设置测量位置以提高工作效率。 提供了一种用于设置第一测量位置和第二测量位置的设备，其中：包括多个线段的参考线叠加在由图案布局数据设置的二维区域上; 第一测量位置设置在轮廓的内侧，该轮廓表示存在布局数据的缺陷坐标以及参考线与所述轮廓的相交点之间的图案; 并且第二测量位置设置在所述轮廓的外侧，并且在所述轮廓和所述轮廓的另一部分之间或所述轮廓的相交点和所述轮廓的另一部分之间。

公开(公告)号：US20120112067A1

公开(公告)日：2012-05-10

申请号：US13348813

申请日：2012-01-12

Applicant: Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto

Inventor： Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto

IPC: H01J37/28

CPC classification number: G03F1/84 ,  G03F1/86 ,  G03F7/70625

Abstract: The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

Abstract translation: 本发明提供一种扫描电子显微镜系统，其适于输出与样品的实际图案边缘端相匹配的轮廓信息，并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘，通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联，以横截面形状获得边缘端配件的位置坐标，并将图案的轮廓作为位置坐标的范围输出。

公开(公告)号：US08121387B2

公开(公告)日：2012-02-21

申请号：US12052066

申请日：2008-03-20

Applicant: Mitsuyo Asano ,  Shinji Yamaguchi ,  Satoshi Tanaka ,  Soichi Inoue ,  Masamitsu Itoh ,  Osamu Ikenaga

Inventor： Mitsuyo Asano ,  Shinji Yamaguchi ,  Satoshi Tanaka ,  Soichi Inoue ,  Masamitsu Itoh ,  Osamu Ikenaga

IPC: G06Q10/00

CPC classification number: G06T7/001 ,  G03F1/86 ,  G06T2207/10056 ,  G06T2207/30148

Abstract: A mask pattern verifying method include obtaining first information about a hot spot from design data of a mask pattern, obtaining second information about the mask pattern actually formed on a photo mask, and determining a measuring spot of the mask pattern actually formed on the photo mask, based on the first and second information.

Abstract translation: 掩模图案验证方法包括从掩模图案的设计数据获得关于热点的第一信息，获得关于实际形成在光掩模上的掩模图案的第二信息，以及确定实际形成在光掩模上的掩模图案的测量点 基于第一和第二信息。