公开(公告)号：US12055861B2

公开(公告)日：2024-08-06

申请号：US17406529

申请日：2021-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kihyun Kim

IPC: H01J37/28 ,  G01N23/2251 ,  G03F7/00

CPC classification number: G03F7/7065 ,  G01N23/2251 ,  G03F7/70633 ,  H01J37/28 ,  G01N2223/418 ,  G01N2223/6116 ,  H01J2237/2817

Abstract: Provided is an inspection method including providing a pattern layout including measurement points, generating a first measurement map including first measurement regions that overlap the measurement points and do not overlap each other in a two-dimensional plan view, providing preliminary measurement regions on the measurement points, producing a polygon by grouping ones of the preliminary measurement regions that overlap each other in the two-dimensional plan view, providing a second measurement region on a center of the polygon, selecting the second measurement region when all of the measurement points in the polygon overlap the second measurement region in the two-dimensional plan view, generating a second measurement map including the selected second measurement region, generating a third measurement map by using the first and second measurement maps, and inspecting patterns on a semiconductor substrate by using the third measurement map. The third measurement map includes the selected second measurement region and ones of the first measurement regions that do not overlap the selected second measurement region in the two-dimensional plan view.

公开(公告)号：US20240260164A1

公开(公告)日：2024-08-01

申请号：US18531096

申请日：2023-12-06

Applicant: Gigaphoton Inc.

Inventor： Masaki NAKANO

IPC: H05G2/00 ,  G03F7/00

CPC classification number: H05G2/006 ,  G03F7/70033 ,  G03F7/7065 ,  G03F7/706849 ,  H05G2/005 ,  H05G2/008

Abstract: A target supply device is configured to supply a liquid state target substance including tin to a concentration position of laser light to generate EUV light. The target supply device includes a tank configured to contain the target substance; and a nozzle communicating with an inside of the tank, and having a nozzle hole through which the target substance passes. Here, an uneven structure is formed on a surface of the nozzle provided with the nozzle hole and facing the concentration position and exhibits tin repellency larger than tin repellency exhibited by a material of the surface.

公开(公告)号：US11996335B2

公开(公告)日：2024-05-28

申请号：US17471062

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Masaya Shima

IPC: H01L21/66 ,  G03F7/00 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L22/12 ,  G03F7/70525 ,  G03F7/7065 ,  H01L21/76838 ,  H01L23/5226

Abstract: A manufacturing method of a semiconductor device includes inspecting each of plural chip regions of a substrate and determining the inspected chip region as a non-defective chip region or a defective chip region, the substrate including the plural chip regions formed as one system, and the plural chip regions being arranged in a planar direction on the substrate. The method includes forming a wiring, the wiring being connected to an electrode of the non-defective chip region among the plural chip regions, and the wiring being not connected to an electrode of the defective chip region among the plural chip regions.

公开(公告)号：US11989873B2

公开(公告)日：2024-05-21

申请号：US17495863

申请日：2021-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong Cho ,  Gun Huh

IPC: G06T7/00 ,  G03F7/00 ,  G06F18/2415 ,  G06N3/047 ,  G06N3/088

CPC classification number: G06T7/0006 ,  G03F7/7065 ,  G06F18/2415 ,  G06N3/047 ,  G06N3/088 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: The inventive concepts provide a method of providing a stochastic prediction system. The method includes extracting contours of patterns corresponding to a first design layout from a plurality of scanning electron microscope (SEM) images, respectively, generating a first contour histogram image based on the contours, and training a stochastic prediction model by using the first contour histogram image as an output, and by using the first design layout and a first resist image, a first aerial image, a first slope map, a first density map, and/or a first photo map corresponding to the first design layout as inputs, in which the stochastic prediction model comprises a cycle generative adversarial network (GAN).

公开(公告)号：US20240110844A1

公开(公告)日：2024-04-04

申请号：US18528108

申请日：2023-12-04

Applicant: NIKON CORPORATION

Inventor： Masaki KATO ,  Hitoshi MIZUNO ,  Yasushi MIZUNO

IPC: G01M11/02 ,  G03F7/00

CPC classification number: G01M11/0264 ,  G03F7/7065 ,  G03F7/706849

Abstract: An exposure apparatus exposes an object to pattern light generated by a spatial light modulator having a plurality of elements in accordance with drawing data. The exposure apparatus includes a data output unit configured to output the drawing data to the spatial light modulator, an illumination optical system configured to irradiate the spatial light modulator with illumination light, a first movable body configured to hold the object, a projection optical system configured to project an image of the pattern light generated by the spatial light modulator onto the object, a detection unit configured to detect the image of the pattern light that has been projected, and a determination unit configured to determine whether the spatial light modulator is capable of generating pattern light in accordance with the drawing data output from the data output unit, based on a detection result of the detection unit.

公开(公告)号：US11867642B2

公开(公告)日：2024-01-09

申请号：US17164198

申请日：2021-02-01

Applicant: Carl Zeiss SMT GmbH

Inventor： Holger Seitz ,  Thomas Zeuner ,  Heiko Feldmann

IPC: G01N21/956 ,  G03F7/00 ,  G03F1/84

CPC classification number: G01N21/956 ,  G03F1/84 ,  G03F7/7065 ,  G03F7/70308 ,  G03F7/70575 ,  G01N2021/95676

Abstract: The invention relates to an inspection device for masks for semiconductor lithography, comprising an imaging device for imaging a mask, and an image recording device, wherein one or more correction bodies which exhibit a dispersive behavior for at least one subrange of the illumination radiation used for the imaging are arranged in the light path between the mask and the image recording device. The invention furthermore relates to a method for taking account of longitudinal chromatic aberrations in inspection devices for masks, comprising the following steps: recording a specific number of images having differently defocused positions, and selecting a subset of the images and simulating a longitudinal chromatic aberration of a projection exposure apparatus.

公开(公告)号：US20230393482A1

公开(公告)日：2023-12-07

申请号：US18116449

申请日：2023-03-02

Applicant: Samsung Display Co., LTD.

Inventor： SOOHONG CHEON ,  HYUNGJIN SONG

IPC: G03F7/20

CPC classification number: G03F7/2063 ,  G03F7/70475 ,  G03F7/7065

Abstract: An exposure mask includes a base layer including a first area and a second area spaced apart from a first area in a first direction, a first inspection transmission pattern defined in a first area of a base layer and arranged in a ring shape having at least one connection part in plan view, and a second inspection transmission pattern defined in a second area of a base layer and arranged in a polygonal shape or a circular shape in plan view.

公开(公告)号：US20230375944A1

公开(公告)日：2023-11-23

申请号：US17750151

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh CHIEN ,  Tzu-Jung PAN ,  Wei-Shin CHENG ,  Cheng Hung TSAI ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70033 ,  G03F7/7085 ,  G03F7/70025 ,  G03F7/70041

Abstract: An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.

公开(公告)号：US20230280661A1

公开(公告)日：2023-09-07

申请号：US18016773

申请日：2021-06-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Shakeeb Bin HASAN ,  Nitish KUMAR

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70125

Abstract: A method for determining deviations in a fabrication process, the method including: providing a sample with a layer having a periodic structure fabricated using the fabrication process and intended to cause a corresponding part of the layer to be fully reflective for light having a wavelength in a wavelength range and having an angle of incidence in an angle range; illuminating the sample with light having a wavelength in the wavelength range and an angle of incidence in the angle range; detecting light reflected and/or scattered from the layer of the sample; and determining deviations in the fabrication process from the detected light.

公开(公告)号：US20230280660A1

公开(公告)日：2023-09-07

申请号：US18196108

申请日：2023-05-11

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Sebastian Thomas BAUERSCHMIDT ,  Peter Maximilian GÖTZ ,  Patrick Sebastian UEBEL ,  Ronald Franciscus Herman HUGERS ,  Jan Adrianus BOER ,  Edwin Johannes Cornelis BOS ,  Andreas Johannes Antonius BROUNS ,  Vitaliy PROSYENTSOV ,  Paul William SCHOLTES - VAN EIJK ,  Paulus Antonius Andreas TEUNISSEN ,  Mahesh Upendra AJGAONKAR

IPC: G03F7/20 ,  G02B1/00 ,  G02B6/02 ,  G01B11/27 ,  G01J1/42 ,  G01M11/00

CPC classification number: G03F7/70625 ,  G02B1/005 ,  G02B6/02 ,  G03F7/7065 ,  G01B11/27 ,  G01J1/4257 ,  G03F7/70525 ,  G01M11/30

Abstract: A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.