公开(公告)号：US09715926B2

公开(公告)日：2017-07-25

申请号：US15031853

申请日：2013-10-31

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Hans S. Cho

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/0028 ,  G11C2013/0073 ,  G11C2013/0092

Abstract: A method to program a memristive device includes applying a pulse sequence including at least a series of pulses in alternating polarity to set the memristive device. The series has an odd number of pulses where odd numbered pulses have a first electrical polarity that switches the device to the state and even numbered pulse or pulses have a second electrical polarity.

公开(公告)号：US20170047516A1

公开(公告)日：2017-02-16

申请号：US15305599

申请日：2014-04-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Hans S. Cho

IPC: H01L45/00

CPC classification number: H01L45/1683 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1658 ,  H01L45/1675

Abstract: A resistive memory device includes a bottom electrode and a top electrode crossing the bottom electrode at a non-zero angle. A switching region operatively contacts the bottom electrode and the top electrode. The switching region defines a current path between the bottom electrode and the top electrode in an ON state. An oxygen-supplying layer operatively contacts a portion of the switching region. The oxygen-supplying layer is positioned orthogonally to the current path and to the switching region.

Abstract translation: 电阻式存储器件包括底部电极和以非零角度与底部电极交叉的顶部电极。 开关区域可操作地接触底部电极和顶部电极。 开关区域在接通状态下限定底部电极和顶部电极之间的电流路径。 氧供给层可操作地接触开关区域的一部分。 氧供给层与电流路径和切换区域正交地配置。