公开(公告)号：US10720456B1

公开(公告)日：2020-07-21

申请号：US16519986

申请日：2019-07-23

Applicant: HRL Laboratories, LLC

Inventor： Terence J. DeLyon ,  Rajesh D. Rajavel ,  Sevag Terterian ,  Minh B. Nguyen ,  Hasan Sharifi

IPC: H01L31/0352 ,  H01L27/144 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/02 ,  H01L31/109

Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.

公开(公告)号：US10361333B1

公开(公告)日：2019-07-23

申请号：US15235010

申请日：2016-08-11

Applicant: HRL Laboratories, LLC

Inventor： Rajesh D. Rajavel ,  Hasan Sharifi ,  Terence J. DeLyon

IPC: H01L31/0352 ,  H01L31/101 ,  H01L27/146

Abstract: A detector. The detector includes a first collector, a first interface layer on the first collector, a first absorber on the first interface layer, a second interface layer on the first absorber, and a second collector on the second interface layer. The first absorber is configured to absorb photons to generate electron-hole pairs. The first interface layer may include a barrier configured to impede the flow of majority carriers from the first absorber to the first collector. The second barrier may include a barrier configured to impede the flow of majority carriers from the first absorber, or from a second absorber, to the second collector.

公开(公告)号：US09709711B1

公开(公告)日：2017-07-18

申请号：US14030485

申请日：2013-09-18

Applicant: HRL Laboratories, LLC

Inventor： Daniel Yap ,  Hasan Sharifi ,  Don F. Weston ,  Rajesh D. Rajavel

IPC: G02B27/36 ,  G02B5/02 ,  B44C1/22

CPC classification number: G02B5/021 ,  B44C1/227 ,  G02B5/0221 ,  G02B5/0268 ,  G02B5/0294

Abstract: A wavelength-selective optical diffuser comprising a substrate of a first material having opposite first and second surfaces, wherein said first material is transparent to a first wavelength λS and a second wavelength λL, with λL>4λS; at least a first surface of said substrate having a surface relief such that a beam of light having the first wavelength λS is diffused, with a rms phase delay S>π/4, when traversing said substrate; and a beam of light having the second wavelength λL is minimally diffused, with a rms phase delay S