公开(公告)号：US11302739B1

公开(公告)日：2022-04-12

申请号：US15226787

申请日：2016-08-02

Applicant: HRL Laboratories, LLC

Inventor： Minh B. Nguyen ,  Rajesh D. Rajavel ,  David H. Chow

IPC: H01L29/06 ,  H01L31/00 ,  H01L27/146

Abstract: An infrared detector. The detector includes: a superlattice structure including: at least three first layers; and at least three second layers, alternating with the first layers. Each of the first layers includes, as a major component, InAsxP1-x, wherein x is between 0.0% and 99.0%, and each of the second layers includes, as a major component, InAsySb1-y, wherein y is between 0% and 60%.

公开(公告)号：US10424608B1

公开(公告)日：2019-09-24

申请号：US15885708

申请日：2018-01-31

Applicant: HRL Laboratories, LLC

Inventor： Terence J. DeLyon ,  Rajesh D. Rajavel ,  Sevag Terterian ,  Minh B. Nguyen ,  Hasan Sharifi

IPC: H01L31/00 ,  H01L27/144 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/109 ,  H01L31/0304

Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.

公开(公告)号：US10269996B1

公开(公告)日：2019-04-23

申请号：US15222886

申请日：2016-07-28

Applicant: HRL Laboratories, LLC

Inventor： Hasan Sharifi ,  Rajesh D. Rajavel ,  Terence J. De Lyon ,  Daniel Yap

IPC: H01L21/00 ,  H01L31/0392 ,  H01L21/66 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/18 ,  G01B11/14

Abstract: A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.

公开(公告)号：US09520525B1

公开(公告)日：2016-12-13

申请号：US14594050

申请日：2015-01-09

Applicant: HRL Laboratories, LLC

Inventor： Daniel Yap ,  Rajesh D. Rajavel ,  Sarabjit Mehta ,  Hasan Sharifi

IPC: H01L21/00 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/1844 ,  H01L27/14685 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1892 ,  Y02E10/50

Abstract: An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.

Abstract translation: 具有第一吸收材料的多个离散区域的红外光电检测器。 这些区域可以具有倾斜侧壁的几何形状。 检测器还可以包括第二吸收体区域，该第二吸收体区域吸收比由第一吸收体材料的多个分立吸收体区域吸收的光更短波长的光的第二吸收体材料。 几何形状可仅延伸穿过第一吸收材料。 或者，几何形状可以部分地延伸到第二吸收体区域中。 检测器具有耦合到多个分立吸收体区域的金属反射器。 检测器还具有包含离散吸收区域和第二吸收区域的基板。 衬底还可以包括蚀刻到衬底中的几何形状特征，其中这些特征形成在衬底的与包含离散吸收体区域和第二吸收体区域的侧面相反的一侧。

公开(公告)号：US09490292B1

公开(公告)日：2016-11-08

申请号：US14214004

申请日：2014-03-14

Applicant: HRL LABORATORIES LLC

Inventor： Daniel Yap ,  Rajesh D. Rajavel

IPC: H01L27/146

CPC classification number: H01L27/14652 ,  H01L27/14625 ,  H01L27/14636

Abstract: An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a collector layer, a first absorber layer that absorbs incident light of a first wavelength band and generates first electrons and first holes, a second absorber layer that absorbs incident light of a second wavelength band and generates second electrons and second holes, and wherein the wavelengths of the incident light in the first wavelength band are shorter than the wavelengths of the incident light in the second wavelength band, and wherein the second absorber layer is laterally contiguous across at least two photo-detectors. The method disclosed teaches how to manufacture the infrared photo-detector array.

Abstract translation: 公开了一种红外光电检测器阵列及其制造方法。 红外光电检测器阵列包括集电极层，吸收第一波长带的入射光并产生第一电子和第一孔的第一吸收层，吸收第二波长带的入射光并产生第二电子的第二吸收层， 第二孔，并且其中所述第一波长带中的入射光的波长比所述第二波长带中的入射光的波长短，并且其中所述第二吸收层横向连续穿过至少两个光电检测器。 所公开的方法教导了如何制造红外光电检测器阵列。

公开(公告)号：US11264526B1

公开(公告)日：2022-03-01

申请号：US16752072

申请日：2020-01-24

Applicant: HRL Laboratories, LLC

Inventor： Minh B. Nguyen ,  Diego Carrasco ,  Rajesh D. Rajavel

IPC: H01L31/11 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0352

Abstract: A phototransistor includes an emitter, a collector, and a base between the emitter and the collector. The base has a thickness greater than 500 nanometers and the base absorbs photons passing through the collector to the base.

公开(公告)号：US11063163B1

公开(公告)日：2021-07-13

申请号：US14213213

申请日：2014-03-14

Applicant: HRL LABORATORIES LLC

Inventor： Terence J. De Lyon ,  Rajesh D. Rajavel

IPC: H01L31/0304 ,  H01L31/11

Abstract: An infrared detector and a method for manufacturing it are disclosed. The infrared photo-detector contains a photo absorber layer responsive to infrared light, a first barrier layer disposed on the absorber layer, wherein the first barrier layer substantially comprises AlSb, a second barrier layer disposed on the first barrier layer, wherein the second barrier layer substantially comprises AlxGa1-xSb and a contact layer disposed on the second barrier layer.

公开(公告)号：US09444001B1

公开(公告)日：2016-09-13

申请号：US13930862

申请日：2013-06-28

Applicant: HRL LABORATORIES, LLC

Inventor： Hasan Sharifi ,  Rajesh D. Rajavel ,  Terence J. De Lyon ,  Daniel Yap

IPC: H01L31/10 ,  H01L31/18 ,  H01L31/109

CPC classification number: H01L31/109 ,  H01L31/03046 ,  H01L31/1844 ,  H01L2924/1461 ,  Y02E10/544

Abstract: A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.

Abstract translation: 位置敏感检测器包括衬底，衬底上的吸收层，吸收层上的阻挡层，阻挡层上的接触层，以及接触层上的第一接触和第二接触。 阻挡层防止多数载流子从吸收层流到接触层。 位置敏感检测器对接触层上的入射光的第一接触和第二接触之间的横向位置敏感。

公开(公告)号：US11251209B1

公开(公告)日：2022-02-15

申请号：US14213809

申请日：2014-03-14

Applicant: HRL LABORATORIES LLC

Inventor： Daniel Yap ,  Rajesh D. Rajavel ,  Sarabjit Mehta ,  Terence J. De Lyon ,  Hasan Sharifi ,  Pierre-Yves Delaunay

IPC: H01L27/144 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/101 ,  H01L31/0236

Abstract: An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a plurality of pyramid-shaped structures, a first light-absorbing material supporting the plurality of the pyramid-shaped structure, a carrier-selective electronic barrier supporting the first light-absorbing material, a second light-absorbing material supporting the carrier-selective electronic barrier, and a metal reflector supporting the second light-absorbing material, wherein the plurality of the pyramid shaped structures are disposed on the side of the photo-detector array facing the incident light to be detected and the metal reflector is disposed on the opposite side of the photo-detector array. The method disclosed teaches how to manufacture the infrared photo-detector array.

公开(公告)号：US10903261B1

公开(公告)日：2021-01-26

申请号：US14214139

申请日：2014-03-14

Applicant: HRL LABORATORIES LLC

Inventor： Daniel Yap ,  Rajesh D. Rajavel

IPC: H01L27/14 ,  H01L27/146 ,  H04N5/33 ,  H04N5/378

Abstract: An infrared photo-detector and a method for manufacturing it are disclosed. The infrared photo-detector contains a collector region, a first absorber layer absorbing a first wavelength band of incident light, wherein the first absorber layer is disposed between the collector region and the incident light, a second absorber layer absorbing a second wavelength band of light, wherein the first absorber layer is disposed between the second absorber layer and the incident light, at least one first electrical contact coupled with the first absorber layer, at least one second electrical contact coupled with the second absorber layer and at least one third electrical contact coupled with the collector, wherein the at least one third electrical contact provides a current associated with absorbed light of the first wavelength band and absorbed light of the second wavelength band. The method disclosed teaches how to manufacture the infrared photo-detector.