-
1.
公开(公告)号:US10742208B1
公开(公告)日:2020-08-11
申请号:US16271725
申请日:2019-02-08
Applicant: HRL Laboratories, LLC
Inventor: Harris P. Moyer , Jongchan Kang , Hasan Sharifi , Ara K. Kurdoghlian , James Lazar
IPC: H03K17/687 , H03K3/356 , H03K5/08 , H03H11/04 , H04L25/03 , H04B1/44 , H01P1/397 , H01L29/778 , H01L29/20
Abstract: A circuit for driving a switched transistor comprises: a level shifter comprising at least one transistor, the level shifter configured to convert an input pulse to a pulse having a greater voltage swing than the input pulse and shift a voltage level of the converted pulse; and a pulse shaping filter coupled between the level shifter and the gate of the switched transistor, the pulse shaping filter tuned to cancel or reduce an impedance of the gate of the switched transistor. The switched transistor and/or the at least one transistor are a GaN High Electron Mobility Transistor (HEMT).
-
公开(公告)号:US10177741B1
公开(公告)日:2019-01-08
申请号:US15240992
申请日:2016-08-18
Applicant: HRL Laboratories, LLC
Inventor: Jongchan Kang , Hasan Sharifi
Abstract: Several embodiments of an envelope tracking active circulator is disclosed with a method to cascade them. In an active transistor based circulator (active circulator), gate (base) and drain (collector) bias voltage can be adjusted by RF or microwave input envelop signal. This is called envelop tracking active circulator. In this concept, input RF signal is detected by detection circuit, such as detection diode or coupler and converted into low frequency envelop signal by the proper filtering circuitry. The generated envelop signal controls the supply voltage of the drain and gate with the proper function of the envelop signal to improve active circulator insertion loss, isolation and power handling capability. This concept can be applied to any type of solid-state FET (Field effect transistor) transistor based active circulator, as long as they have bias dependent trans-conductance and capacitances inside. For a BJT (bipolar junction transistor) based active circulator, base bias current supply modulator will be used instead of voltage supply modulator.
-
公开(公告)号:US11158754B1
公开(公告)日:2021-10-26
申请号:US14455820
申请日:2014-08-08
Applicant: HRL LABORATORIES LLC
Inventor: Pierre-Yves Delaunay , Brett Z. Nosho , Hasan Sharifi
IPC: H01L31/101 , H01L31/0216 , H01L27/146
Abstract: A structure is disclosed. The structure contains a second detector disposed above a first detector, wherein the first detector contains a first absorber layer, a first barrier layer disposed above the first absorber layer, a first contact layer disposed above the first barrier layer, and wherein the second detector contains a second contact layer disposed above the first contact layer, a second barrier layer disposed above the second contact layer, a second absorber layer disposed above the second barrier layer.
-
公开(公告)号:US10424608B1
公开(公告)日:2019-09-24
申请号:US15885708
申请日:2018-01-31
Applicant: HRL Laboratories, LLC
Inventor: Terence J. DeLyon , Rajesh D. Rajavel , Sevag Terterian , Minh B. Nguyen , Hasan Sharifi
IPC: H01L31/00 , H01L27/144 , H01L31/02 , H01L31/18 , H01L31/0368 , H01L31/109 , H01L31/0304
Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.
-
公开(公告)号:US10269996B1
公开(公告)日:2019-04-23
申请号:US15222886
申请日:2016-07-28
Applicant: HRL Laboratories, LLC
Inventor: Hasan Sharifi , Rajesh D. Rajavel , Terence J. De Lyon , Daniel Yap
IPC: H01L21/00 , H01L31/0392 , H01L21/66 , H01L31/0304 , H01L31/0224 , H01L31/109 , H01L31/18 , G01B11/14
Abstract: A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.
-
公开(公告)号:US09691761B1
公开(公告)日:2017-06-27
申请号:US15335207
申请日:2016-10-26
Applicant: HRL Laboratories, LLC
Inventor: Pamela R. Patterson , Keisuke Shinohara , Hasan Sharifi , Wonill Ha , Tahir Hussain , James Chingwei Li , Dana C. Wheeler
IPC: H01L27/00 , H01L27/06 , H01L21/8258 , H01L29/165
CPC classification number: H01L27/0688 , H01L21/8252 , H01L21/8258 , H01L21/84 , H01L23/481 , H01L27/0605 , H01L27/085 , H01L27/1203 , H01L29/165 , H01L2224/32145 , H01L2224/73265 , H01L2224/97
Abstract: A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.
-
公开(公告)号:US09641156B1
公开(公告)日:2017-05-02
申请号:US14949044
申请日:2015-11-23
Applicant: HRL LABORATORIES, LLC
Inventor: Jongchan Kang , Hasan Sharifi , Eric M. Prophet
CPC classification number: H03H11/38 , H03K17/693
Abstract: A multi-port active circulator includes a plurality of cascode circuits coupled to one another in a ring. Each respective cascode circuit of the plurality of cascode circuits is coupled to a respective port of a plurality of ports. Each respective cascode circuit includes a common source transistor, a common gate transistor coupled to the common source transistor, and a feedback circuit coupled from the common gate transistor to the common source transistor. Each common source transistor of each respective cascode circuit is coupled to a common junction point.
-
公开(公告)号:US09515068B1
公开(公告)日:2016-12-06
申请号:US14014121
申请日:2013-08-29
Applicant: HRL Laboratories, LLC
Inventor: Pamela R. Patterson , Keisuke Shinohara , Hasan Sharifi , Wonill Ha , Tahir Hussain , James Chingwei Li , Dana C. Wheeler
CPC classification number: H01L27/0688 , H01L21/8252 , H01L21/8258 , H01L21/84 , H01L23/481 , H01L27/0605 , H01L27/085 , H01L27/1203 , H01L29/165 , H01L2224/32145 , H01L2224/73265 , H01L2224/97
Abstract: A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.
Abstract translation: 一种复合半导体集成电路,包括第一衬底; 形成在所述第一基板的顶部上的第一电子部件; 形成在所述第一基板的顶部并包括所述第一电子部件的第一介电材料层,所述第一介电材料层包括露出所述第一基板的第一区域的凹部; 以及在制造所述第二介电材料层之后,在所述第一衬底的所述第一区域的顶部附着到所述第一衬底的第二电介质材料层,所述第二材料层包括第二电子部件。
-
公开(公告)号:US10361731B2
公开(公告)日:2019-07-23
申请号:US15828106
申请日:2017-11-30
Applicant: HRL Laboratories, LLC
Inventor: Zhiwei A. Xu , Yen-Cheng Kuan , Cynthia D. Baringer , Hasan Sharifi , James Chingwei Li , Donald A. Hitko
Abstract: A Delta-Sigma modulator architecture is disclosed that uses interleaving and dynamic matching algorithms to address the needs of multi-mode, multi-band high bandwidth transmitters. The proposed architecture also supports a novel software defined transmitter architecture based on an interleaved Delta-Sigma modulator to generate RF signals. The proposed architecture leverages interleaving concepts to relax subcomponent clock rates without changing the effective oversampling ratio, thus, making it easier to reach aggressive dynamic range goals across wider bandwidths at higher frequencies. The DEM algorithm helps to randomize mismatch errors across all interleaved paths and improves substantially the signal-to-noise ratio. Additionally, a tunable bandpass filter can be added to reject out-of-band emissions.
-
公开(公告)号:US20190165820A1
公开(公告)日:2019-05-30
申请号:US15828106
申请日:2017-11-30
Applicant: HRL Laboratories, LLC
Inventor: Zhiwei A. Xu , Yen-Cheng Kuan , Cynthia D. Baringer , Hasan Sharifi , James Chingwei Li , Donald A. Hitko
Abstract: A Delta-Sigma modulator architecture is disclosed that uses interleaving and dynamic matching algorithms to address the needs of multi-mode, multi-band high bandwidth transmitters. The proposed architecture also supports a novel software defined transmitter architecture based on an interleaved Delta-Sigma modulator to generate RF signals. The proposed architecture leverages interleaving concepts to relax subcomponent clock rates without changing the effective oversampling ratio, thus, making it easier to reach aggressive dynamic range goals across wider bandwidths at higher frequencies. The DEM algorithm helps to randomize mismatch errors across all interleaved paths and improves substantially the signal-to-noise ratio. Additionally, a tunable bandpass filter can be added to reject out-of-band emissions.
-
-
-
-
-
-
-
-
-