公开(公告)号：US08580102B2

公开(公告)日：2013-11-12

申请号：US12921035

申请日：2009-02-28

申请人： Emmanuel Ossei-Wusu ,  Ala Cojocaru ,  Juergen Carstensen ,  Helmut Foell

发明人： Emmanuel Ossei-Wusu ,  Ala Cojocaru ,  Juergen Carstensen ,  Helmut Foell

IPC分类号： C25F3/12

CPC分类号： H01L21/3063 ,  C25F3/12

摘要： Method for the electrochemical etching of macropores in n-type silicon wafers, using illumination of the wafer reverse sides and using an aqueous electrolyte, characterized in that the electrolyte is an aqueous acetic acid solution with the composition of H2O:CH3COOH in the range between 2:1 and 7:3, with an addition of at least 9 percent by weight hydrofluoric acid.

摘要翻译： 用于在n型硅晶片中电化学蚀刻大孔的方法，使用晶片反面的照射和使用含水电解质，其特征在于电解质是乙酸水溶液，其组成为H 2 O：CH 3 COOH，范围为2 ：1和7：3，加入至少9重量％的氢氟酸。

公开(公告)号：US5130643A

公开(公告)日：1992-07-14

申请号：US617588

申请日：1990-11-26

申请人： Helmut Foell ,  Volker Lehmann

发明人： Helmut Foell ,  Volker Lehmann

IPC分类号： G01N21/00 ,  G01R31/265 ,  H01L21/66

CPC分类号： G01R31/2656

摘要： For a two-stage measuring method, a respective cell having an electrode therein is applied to the front surface and to the rear surface of a semiconductor wafer, whereby only the cell as the rear surface is filled with an electrolyte in the first measuring step. The minority carrier photo current I.sub.2 ' flowing between the electrode and the semiconductor surface in the rear cell, given illumination of the front cell of the semiconductor crystal wafer, is dependent on the recombination speed S at the front surface. In the second measuring step, the front cell is also filled with electrolyte and both the rear surface photo current I.sub.2, given what is now a negligible influence of the value S as well as the front surface photo current I.sub.1 are measured. The recombination speed S can be calculated from the measure photo currents with the assistance of a mathematical equation. Given point-by-point illumination and scanning over the crystal wafer, the topical distribution of the recombination speed is obtained.

摘要翻译： 对于两级测量方法，其中具有电极的各个单元被施加到半导体晶片的前表面和后表面，由此在第一测量步骤中仅仅将电池作为后表面填充有电解质。 在半导体晶体晶片的正面单元的照明下，在电池中的电极和半导体表面之间流动的少数载流子光电流I2'取决于前表面的复合速度S. 在第二测量步骤中，前电池还充满电解质，并且测量了现在对值S以及前表面光电流I1可忽略的影响的背面光电流I2。 可以借助于数学方程式从测量光电流计算复合速度S. 通过逐点照明和晶片上的扫描，可获得复合速度的局部分布。

公开(公告)号：US5128514A

公开(公告)日：1992-07-07

申请号：US212799

申请日：1988-06-29

申请人： Volker Lehmann ,  Helmut Foell

发明人： Volker Lehmann ,  Helmut Foell

IPC分类号： G01J3/10 ,  G01J5/52 ,  G01N21/01 ,  G01N21/3504 ,  H05B3/20 ,  H05B3/26

CPC分类号： H05B3/265 ,  G01J5/522 ,  G01N21/3504 ,  H05B2203/032

摘要： The black radiator contains a doped, crystalline silicon member having a honeycombed surface and contains a controllable electrical heating mechanism with which the silicon member can be heated. The heating mechanism has a heating coil that is a doped silicon structure that is oppositely doped to the doping of the silicon member and to which a controllable voltage is applied. The manufacturing method provides that the silicon member having a honeycombed surface be manufactured from an n-silicon member by electrolytic etching.

摘要翻译： 黑色散热器包含具有蜂窝表面的掺杂的结晶硅构件，并且包含可加热硅构件的可控电加热机构。 加热机构具有加热线圈，该加热线圈是与硅构件的掺杂相反地掺杂并且施加可控电压的掺杂硅结构。 制造方法提供具有蜂窝表面的硅构件通过电解蚀刻由n硅构件制造。

公开(公告)号：US4874484A

公开(公告)日：1989-10-17

申请号：US193760

申请日：1988-05-13

申请人： Helmut Foell ,  Volker Lehmann

发明人： Helmut Foell ,  Volker Lehmann

IPC分类号： H01L21/3063 ,  H01L29/10 ,  H01L29/739 ,  H01L29/744 ,  H01L29/92 ,  H01L29/93

CPC分类号： H01L29/744 ,  H01L21/3063 ,  H01L29/102 ,  H01L29/1066 ,  H01L29/7392 ,  H01L29/92 ,  H01L29/93

摘要： The present invention provides the production of apertured openings or trenches in layers or substrates composed of n-doped silicon proceeding in an electrolytic way, whereby the silicon is connected as a positively polarized electrode of an electrolysis cell containing an agent that contains hydrofluoric acid. Hole structures having highly variable cross-section can be reproducibly manufactured with the method of the invention and holes can be localized by prescribing nuclei. The invention can be used in the manufacture of trench cells in memory modules, insulating trenches in LSI semiconductor circuits, large-area capacitors (varicaps), and in contacting more deeply disposed layers in disconnectable and voltage-controlled thyristors.

摘要翻译： 本发明提供了以电解方式制造由n掺杂硅组成的层或衬底的有孔开口或沟槽，由此将硅作为包含含有氢氟酸的试剂的电解槽的正极化电极连接。 具有高度可变横截面的孔结构可以通过本发明的方法重现地制造，并且可以通过处方核来定位孔。 本发明可用于制造存储器模块中的沟槽电池，LSI半导体电路中的绝缘沟槽，大面积电容器（变容片）以及在可分离和压控晶闸管中更深层设置的层。