公开(公告)号：US10026896B2

公开(公告)日：2018-07-17

申请号：US15500050

申请日：2015-02-13

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Warren Jackson ,  Jianhua Yang ,  Kyung Min Kim ,  Zhiyong Li

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: A multilayered memristor includes a semiconducting n-type layer, a semiconducting p-type layer, and a semiconducting intrinsic layer. The semiconducting n-type layer includes one or both of anion vacancies and metal cations. The semiconducting p-type layer includes one or both of metal cation vacancies and anions. The semiconducting intrinsic layer is coupled between the n-type layer and the p-type layer to form an electrical series connection through the n-type layer, the intrinsic layer, and the p-type layer.

公开(公告)号：US20170271009A1

公开(公告)日：2017-09-21

申请号：US15329845

申请日：2015-01-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Jianhua Yang ,  Ning Ge ,  John Paul Strachan ,  Gary Gibson ,  Warren Jackson

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0023 ,  G11C13/003 ,  G11C13/004 ,  G11C2213/73 ,  G11C2213/74 ,  G11C2213/76

Abstract: In one example, a volatile selector is switched from a low conduction state to a first high conduction state with a first voltage level and then the first voltage level is removed to activate a relaxation time for the volatile selector. The relaxation time is defined as the time the first volatile selector transitions from the high conduction state back to the low conduction state. The volatile selector is switched with a second voltage level of opposite polarity to the first voltage level to significantly reduce the relaxation time of the volatile selector.

公开(公告)号：US09716224B2

公开(公告)日：2017-07-25

申请号：US15114973

申请日：2014-03-07

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary Gibson ,  Richard Henze ,  Warren Jackson ,  Yoocham Jeon

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/1293 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0095 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode. The thermally-insulating cladding surrounds at least a portion of the memristor.