公开(公告)号：US10084013B2

公开(公告)日：2018-09-25

申请号：US14426425

申请日：2014-12-02

申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.

发明人： Qiuping Huang

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L27/24 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L21/20 ,  H01L21/70 ,  H01L21/84

CPC分类号： H01L27/2418 ,  G02F1/136209 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

摘要： A thin-film transistor includes a substrate, a gate electrode formed on a surface of the substrate, a gate protection layer and a semiconductor layer stacked on the gate electrode, and an etch stop layer, source terminal metal, and drain terminal metal formed on a surface of the semiconductor layer in such a way that the source terminal metal and the drain terminal metal are respectively located on two opposite sides of the etch stop layer. The thin-film transistor further includes a light shielding layer, an insulation medium layer, and a pixel electrode. The light shielding layer is stacked on the etch stop layer to prevent light from irradiating the semiconductor layer. The insulation medium layer covers the source terminal metal, the drain terminal metal, and the light shielding layer. The pixel electrode is formed on a surface of the insulation medium layer and electrically connected to the drain terminal metal.

公开(公告)号：US20180114798A1

公开(公告)日：2018-04-26

申请号：US15848673

申请日：2017-12-20

申请人： INNOLUX CORPORATION

发明人： Wei-Ching CHO ,  Hsia-Ching CHU ,  Kuei-Ling LIU

IPC分类号： H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1248 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/2418 ,  H01L29/7869 ,  H01L29/78696

摘要： In a display panel, a first substrate has an active area and a peripheral area outside the active area. A plurality of first traces are located at the peripheral area. A first insulation layer is disposed on the first traces, and has an opening region located at the peripheral area and having a longest edge. The switch element is adjacent to the opening region, and has an active layer. The active layer has a first width in a direction perpendicular to the longest edge of the opening region, and a shortest distance between a projection of the longest edge of the opening region on the first substrate and a projection of the active layer on the first substrate in the direction perpendicular to the longest edge of the opening region is greater than zero and less than the first width.

公开(公告)号：US09947721B2

公开(公告)日：2018-04-17

申请号：US15088475

申请日：2016-04-01

申请人： Micron Technology, Inc.

发明人： Paolo Fantini

IPC分类号： H01L21/00 ,  H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  G11C7/04

CPC分类号： H01L27/249 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/1293 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1683

摘要： Methods, systems, and devices for a three-dimensional memory array are described. Memory cells may transform when exposed to elevated temperatures, including elevated temperatures associated with a read or write operation of a neighboring cell, corrupting the data stored in them. To prevent this thermal disturb effect, memory cells may be separated from one another by thermally insulating regions that include one or several interfaces. The interfaces may be formed by layering different materials upon one another or adjusting the deposition parameters of a material during formation. The layers may be created with planar thin-film deposition techniques, for example.

公开(公告)号：US09911789B2

公开(公告)日：2018-03-06

申请号：US15128244

申请日：2014-04-10

申请人： Hewlett Packard Enterprise Development LP

发明人： Jianhua Yang ,  Gary Gibson ,  Zhiyong Li

IPC分类号： G11C11/00 ,  H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC分类号： H01L27/2481 ,  G11C13/004 ,  G11C13/0069 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.

公开(公告)号：US20180061889A1

公开(公告)日：2018-03-01

申请号：US15789712

申请日：2017-10-20

申请人： SK hynix Inc.

发明人： Beom Yong KIM ,  Soo Gil KIM

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/2427 ,  H01L27/2418 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： A switching device includes a first electrode, a switching layer having a non-memory characteristic, and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. The second atom forms a trap site trapping a conductive carrier in the switching layer when a voltage having an absolute value that is smaller than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes. The second atom forms a moving path through which the conductive carrier moves between the first electrode and the second electrode when a voltage having an absolute value that is greater than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes.

公开(公告)号：US09887353B2

公开(公告)日：2018-02-06

申请号：US15293079

申请日：2016-10-13

申请人： SK hynix Inc.

发明人： Wan-Gee Kim

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/124 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1641 ,  H01L45/1675 ,  H01L45/1683

摘要： An electronic device includes a semiconductor memory that includes: a first conductive pattern disposed over a substrate; a first selection element layer disposed over the first conductive pattern and having one or more first grooves therein, the first grooves overlapping the first conductive pattern; a first variable resistance layer whose sidewalls and bottom are surrounded by the first selection element layer, the first variable resistance layer being buried in the first groove; and a second conductive pattern that overlaps the first variable resistance layer and is disposed over the first variable resistance layer.

公开(公告)号：US09831287B2

公开(公告)日：2017-11-28

申请号：US15277551

申请日：2016-09-27

申请人： Micron Technology, Inc.

发明人： Chandra Mouli

IPC分类号： G11C5/02 ,  H01L27/24 ,  G11C11/56 ,  G11C13/00 ,  H01L45/00 ,  G11C11/34 ,  H01L29/66

CPC分类号： H01L27/2418 ,  G11C5/02 ,  G11C11/34 ,  G11C11/39 ,  G11C11/4026 ,  G11C11/5664 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/003 ,  G11C2013/009 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  G11C2216/08 ,  H01L29/6609 ,  H01L45/00 ,  H01L45/141 ,  H01L45/145 ,  H01L45/16

摘要： Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage.

公开(公告)号：US20170271410A1

公开(公告)日：2017-09-21

申请号：US15500049

申请日：2015-02-11

申请人： Hewlett Packard Enterprise Development LP

发明人： Minxian Max Zhang ,  Kathryn Samuels ,  Jianhua Joshua Yang ,  R. Stanley Williams ,  Zhiyong Li

IPC分类号： H01L27/24

CPC分类号： H01L27/2418 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/14 ,  H01L45/146

摘要： Provided in one example is a nonvolatile memory crossbar array. The array includes a number of junctions formed by a number of row lines intersecting a number of column lines; and a resistive memory element in series with a selector at each of the junctions coupling between one of the row lines and one of the column lines. The selector may be a volatile switch including: a bottom electrode; an oxide layer disposed over the bottom electrode, the oxide layer including Cu2O; and a top electrode disposed over the oxide layer.

公开(公告)号：US20170263682A1

公开(公告)日：2017-09-14

申请号：US15227493

申请日：2016-08-03

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Masanori KOMURA ,  Takeshi TAKAGI

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L23/528

CPC分类号： H01L27/249 ,  H01L23/528 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146

摘要： A semiconductor memory device according to an embodiment comprises: a semiconductor substrate which extends in first and second directions; first wiring lines which are arranged in a third direction, and which extend in the first direction; second wiring lines which are arranged in the first direction and extend in the third direction; and memory cells disposed at intersections of the first wiring lines and the second wiring lines, one of the memory cells including a first film and a second film whose permittivity is different from that of the first film which are stacked in the second direction between one of the first wiring lines and one of the second wiring lines, and the second films of two of the memory cells adjacent in the third direction being separated between the two memory cells.

公开(公告)号：US20170170235A1

公开(公告)日：2017-06-15

申请号：US15154865

申请日：2016-05-13

申请人： SK hynix Inc.

发明人： Beom Yong KIM ,  Soo Gil KIM

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/2427 ,  H01L27/2418 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： A switching device includes a first electrode, a switching layer and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. A valence of the first atom and a valence of the second atom are different from each other.