公开(公告)号：US06806498B2

公开(公告)日：2004-10-19

申请号：US10218310

申请日：2002-08-15

申请人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko Mino

发明人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko Mino

IPC分类号： H01L31036

CPC分类号： H01L21/02532 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/316 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.

摘要翻译： 在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。 首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率 之后，上绝缘层203被图案化，从而在其上形成多个条纹。 随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。

公开(公告)号：US06786790B2

公开(公告)日：2004-09-07

申请号：US10116114

申请日：2002-04-05

申请人： Takaiki Nomura ,  Hiroshi Satani ,  Naomi Kaneko

发明人： Takaiki Nomura ,  Hiroshi Satani ,  Naomi Kaneko

IPC分类号： H01J902

CPC分类号： G02F1/133345 ,  G02F1/133305

摘要： A method for manufacturing an image display element having a resin substrate that holds a display functional portion on which images are displayed, having: an inorganic film forming step of forming inorganic films on both surfaces of the resin substrate, and a dehydration step of dehydrating the resin substrate before or after the inorganic film forming step, wherein the resin substrate subjected to the inorganic film forming step and the dehydration step and an other substrate are bonded to each other by a sealing material, and then the sealing material is cured by heating at least the resin substrate.

摘要翻译： 一种制造图像显示元件的方法，该图像显示元件具有：保持显示图像的显示功能部分的树脂基板，具有：在所述树脂基板的两个表面上形成无机膜的无机膜形成步骤和使所述树脂基板脱水的脱水步骤 在无机膜形成步骤之前或之后的树脂基板，其中经过无机膜形成步骤的树脂基板和脱水步骤以及另一个基板通过密封材料彼此接合，然后通过加热固化密封材料 至少树脂基材。

公开(公告)号：US06697141B2

公开(公告)日：2004-02-24

申请号：US10160119

申请日：2002-06-04

申请人： Hiroyuki Yamakita ,  Katsuhiko Kumagawa ,  Kazuo Inoue ,  Akinori Shiota ,  Ichiro Sato ,  Hiroshi Satani ,  Masanori Kimura ,  Satoshi Asada

发明人： Hiroyuki Yamakita ,  Katsuhiko Kumagawa ,  Kazuo Inoue ,  Akinori Shiota ,  Ichiro Sato ,  Hiroshi Satani ,  Masanori Kimura ,  Satoshi Asada

IPC分类号： G02F11343

CPC分类号： G02F1/134363

摘要： A liquid crystal display comprises an array substrate in which a common electrode, a pixel electrode, a scanning signal line, a video signal line and a semiconductor switching element are provided, an opposed substrate, and a liquid crystal layer interposed between the array substrate and opposed substrate. The line width of at least either the common electrode or the pixel electrode is larger than the distance between the common electrode and the pixel electrode. The film thickness of at least one of the common electrode and the pixel electrode is larger than the thickness of at least either the scanning signal line or the video signal line. As a result, an in-plane electric field liquid crystal display having a wide viewing angle, high-speed response, and high image quality such as high luminance is provided.

摘要翻译： 液晶显示器包括其中设置有公共电极，像素电极，扫描信号线，视频信号线和半导体开关元件的阵列基板，相对基板和插入在阵列基板和 相对基板。 公共电极或像素电极中的至少任一方的线宽比公共电极和像素电极之间的距离大。 公共电极和像素电极中的至少一个的膜厚比扫描信号线或视频信号线的至少一个的厚度大。 结果，提供了具有宽视角，高速响应以及诸如高亮度的高图像质量的平面内电场液晶显示器。

公开(公告)号：US06528397B1

公开(公告)日：2003-03-04

申请号：US09581768

申请日：2000-06-16

申请人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko MIno

发明人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko MIno

IPC分类号： H01L2136

CPC分类号： H01L21/02532 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/316 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.

摘要翻译： 在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。 首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率 之后，上绝缘层203被图案化，从而在其上形成多个条纹。 随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。