公开(公告)号：US09899217B2

公开(公告)日：2018-02-20

申请号：US14555897

申请日：2014-11-28

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  STMICROELECTRONICS SA

发明人： Shay Reboh ,  Yves Morand ,  Hubert Moriceau

IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L21/84 ,  H01L29/10 ,  H01L21/265 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/02689 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/26506 ,  H01L21/7624 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/7847 ,  H01L29/78654 ,  H01L29/78684

摘要： A method is provided for producing a microelectronic device provided with different strained areas in a superficial layer of a semi-conductor on insulator type substrate, including amorphizing a region of the superficial layer and then a lateral recrystallization of the region from crystalline areas adjoining the region.

公开(公告)号：US20170200589A1

公开(公告)日：2017-07-13

申请号：US14993665

申请日：2016-01-12

申请人： FEI Company

发明人： Clive D. Chandler

IPC分类号： H01J37/32

CPC分类号： H01J37/32522 ,  C23F4/00 ,  H01J37/3056 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/3341 ,  H01L21/02315 ,  H01L21/02689 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/32136 ,  H01L39/2477

摘要： A micromachining process includes exposing the work piece surface to a precursor gas including a compound having an acid halide functional group; and irradiating the work piece surface with a beam in the presence of the precursor gas, the precursor gas reacting in the presence of the particle beam to remove material from the work piece surface.

公开(公告)号：US20150072524A1

公开(公告)日：2015-03-12

申请号：US14192671

申请日：2014-02-27

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Shingo KANAMITSU

IPC分类号： H01L21/308 ,  G03F7/00

CPC分类号： G03F7/0017 ,  B29L2031/757 ,  G03F7/0002 ,  H01L21/02689 ,  H01L21/26566

摘要： According to one embodiment, in a method of repairing a defect on a template substrate for imprint lithography using a charged particle beam, a drift correction mark to correct drift of the charged particle beam is formed on the template substrate. The defect on the template substrate is repaired while correcting the drift of the charged particle beam with reference to the drift correction mark. The drift correction mark is removed.

摘要翻译： 根据一个实施例，在使用带电粒子束修补模板基板上的缺陷以进行压印光刻的方法中，在模板基板上形成用于校正带电粒子束漂移的漂移校正标记。 修正模板基板上的缺陷，同时参照漂移校正标记校正带电粒子束的漂移。 移除漂移校正标记。

公开(公告)号：US08445366B2

公开(公告)日：2013-05-21

申请号：US12457916

申请日：2009-06-25

申请人： Jung-hyun Lee ,  Jong-min Kim ,  Dong-joon Ma ,  Chang-soo Lee

发明人： Jung-hyun Lee ,  Jong-min Kim ,  Dong-joon Ma ,  Chang-soo Lee

IPC分类号： H01L21/428 ,  H01L21/477

CPC分类号： H01L21/02689 ,  H01J37/317 ,  H01J2237/3156 ,  H01J2237/316 ,  H01L21/02532

摘要： Electron beam annealing apparatuses for annealing a thin layer on a substrate and annealing methods using the apparatuses are provided. The electron beam annealing apparatuses may include an electron beam scanning unit that may scan a pulsed electron beam onto a substrate.

摘要翻译： 提供了用于退火衬底上的薄层的电子束退火装置和使用该装置的退火方法。 电子束退火装置可以包括可以将脉冲电子束扫描到衬底上的电子束扫描单元。

公开(公告)号：US07897492B2

公开(公告)日：2011-03-01

申请号：US12587399

申请日：2009-10-06

申请人： Nathaniel R. Quick

发明人： Nathaniel R. Quick

IPC分类号： H01L21/00

CPC分类号： H01L21/02381 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02667 ,  H01L21/02689

摘要： A method is disclosed for forming a layer of a wide bandgap material in a non-wide bandgap material. The method comprises providing a substrate of a non-wide bandgap material and converting a layer of the non-wide bandgap material into a layer of a wide bandgap material. An improved component such as wide bandgap semiconductor device may be formed within the wide bandgap material through a further conversion process.

摘要翻译： 公开了一种在非宽带隙材料中形成宽带隙材料层的方法。 该方法包括提供非宽带隙材料的衬底并将非宽带隙材料的层转换成宽带隙材料的层。 可以通过进一步的转换过程在宽带隙材料内形成诸如宽带隙半导体器件的改进的部件。

公开(公告)号：US07547866B2

公开(公告)日：2009-06-16

申请号：US11107844

申请日：2005-04-18

申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto

发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto

IPC分类号： G02B7/04

CPC分类号： H01L21/02686 ,  B23K26/04 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02689 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285

摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.

摘要翻译： 本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。 在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。 特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离 在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

公开(公告)号：US07468304B2

公开(公告)日：2008-12-23

申请号：US11466950

申请日：2006-08-24

申请人： Nobuyuki Kaji ,  Hisato Yabuta

发明人： Nobuyuki Kaji ,  Hisato Yabuta

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02675 ,  H01L21/02689 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/428

摘要： A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.

摘要翻译： 一种使用氧化物半导体的器件的制造方法，包括在衬底上形成氧化物半导体的工艺以及通过用能量射线照射其预定区域来改变氧化物半导体的导电性的工艺。

公开(公告)号：US20080087984A1

公开(公告)日：2008-04-17

申请号：US11998961

申请日：2007-12-03

申请人： Andreas Melas

发明人： Andreas Melas

IPC分类号： H01L29/12

CPC分类号： H01L21/26553 ,  C30B29/40 ,  C30B31/22 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/02689 ,  H01L21/265 ,  H01L21/268 ,  Y10S117/904 ,  Y10S117/905

摘要： Thermally sensitive at elevated, near melting point temperature, compound semiconductor materials single crystals including Group III-Nitride, other Group III-V, Group II-VI and Group IV-IV are produced by a variety of methods. When produced as single crystal layers by epitaxy methods or is necessary to expose them to elevated temperatures or ion implanted to the non crystalline state, or their electrical or optical properties are modified, large numbers of crystal defects on the atomic or macro scale may be produced, which limit the yield and performance of opto- and electronic devices constructed out of and grown on top of these layers. It is necessary to be able to improve the crystal quality of such materials after being exposed to elevated temperature or ion implanted or modified by the presence of impurities. It is necessary, particularly for opto- and electronic devices that only the surface of such materials is processed, improved and thus the modified surface product. Generally, as shown in FIG. 1, the thermally sensitive compound semiconductor layer is first coated with a metal layer of approximate thickness of 0.1 microns. Next, the volatile component of the compound semiconductor is ion implanted through the metal layer so as to occupy mostly the top 0.1 to 0.5 microns of the compound semiconductor layer. Co-implantation may be used as well to improve the surface. Finally, through a pulsed directed energy beam of electrons with a fluence of approximately 1 Joule /cm2, the top approximately 0.5 microns acquire a level of the deposited metal and are converted into a single crystal with improved properties such as reduced defect density and or electrical dopant (FIG. 1).

摘要翻译： 在升高的近熔点温度下热敏，化合物半导体材料包括III族氮化物，其他III-V族，II-VI族和IV-IV族的单晶通过各种方法制备。 当通过外延法制造为单晶层或者将其暴露于升高的温度或者注入到非结晶状态的离子是必要的，或者它们的电学或光学性质被修饰时，可以产生大量原子或宏观尺度的晶体缺陷 ，这限制了在这些层之上构建和生长的光电子器件的产量和性能。 在暴露于升高的温度或离子注入或通过杂质的存在进行改性之后，必须能够改善这些材料的晶体质量。 特别是对于只有这些材料的表面被加工，改进并因此改性的表面产品的光电和电子器件是必要的。 通常，如图1所示。 如图1所示，热敏化合物半导体层首先涂覆有约0.1微米厚度的金属层。 接下来，通过金属层离子注入化合物半导体的挥发性成分，主要占据化合物半导体层的顶部0.1〜0.5微米。 也可以使用共同注入以改善表面。 最后，通过具有大约1焦耳/厘米2的注量的电子的脉冲定向能量束，顶部约0.5微米获得沉积金属的水平并转化为具有改进特性的单晶 例如降低的缺陷密度和/或电掺杂剂（图1）。

公开(公告)号：US07341628B2

公开(公告)日：2008-03-11

申请号：US11014304

申请日：2004-12-16

申请人： Andreas A. Melas

发明人： Andreas A. Melas

IPC分类号： C30B33/00

CPC分类号： H01L21/26553 ,  C30B29/40 ,  C30B31/22 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/02689 ,  H01L21/265 ,  H01L21/268 ,  Y10S117/904 ,  Y10S117/905

摘要： Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum layer of approximate thickness of 0.1 microns. Next, Nitrogen is ion implanted through the Aluminum layer so as to occupy mostly the top 0.1 to 0.5 microns of the Gallium Nitride layer. Finally, through a pulsed directed energy beam such as electron or photons, with a fluence of approximately 1 Joule/cm2 the top approximately 0.5 microns are converted to a single crystal with reduced defect density.

摘要翻译： 通过诸如氢化物气相外延（HVPE）的外延生长为单晶的氮化镓层含有大量的晶体缺陷，例如六边形凹坑，这限制了光电子器件的产率和性能。 在该方法中，首先用大约0.1微米厚的铝层涂覆氮化镓层。 接下来，通过铝层离子注入氮气，以便占据主要是0.1至0.5微米的氮化镓层。 最后，通过诸如电子或光子的脉冲定向能量束，具有大约1焦耳/厘米2的能量密度，顶部约0.5微米将被转换成具有降低的缺陷密度的单晶。

公开(公告)号：US20070173040A1

公开(公告)日：2007-07-26

申请号：US11329324

申请日：2006-01-09

申请人： Nirmal Theodore ,  Stephen Schauer ,  Clarence Tracy

发明人： Nirmal Theodore ,  Stephen Schauer ,  Clarence Tracy

IPC分类号： H01L21/20

CPC分类号： H01L21/2636 ,  H01L21/02532 ,  H01L21/02689

摘要： A method of reducing an inter-atomic bond strength in a substance includes the steps of: providing a target material (110, 910, 1210, 1260, 1410, 1460); exposing the target material to a particle flood (140); and annealing the target material while exposing the target material to the particle flood. As an example, the target material can be a collection of non-activated dopant atoms within a semiconducting material. As another example, the target material can be a semiconducting material in an amorphous form. In a different embodiment of the invention an electrically conducting material (950, 1250, 1270, 1450, 1470, 1480) is used as an electron source rather than a particle flood, and an electrically conducting diffusion barrier (940) is placed between the electrically conducting material and the target material.

摘要翻译： 减少物质中的原子间键合强度的方法包括以下步骤：提供目标材料（110,910,1210,1260,1410,1460）; 将目标材料暴露于颗粒溢流（140）; 并且在将目标材料暴露于颗粒物溢出的同时退火目标材料。 作为示例，目标材料可以是半导体材料内的非活化掺杂剂原子的集合。 作为另一个实例，靶材料可以是无定形形式的半导体材料。 在本发明的不同实施例中，使用导电材料（950,1250,1270,1450,1470,1480）作为电子源而不是粒子泛流，并且导电扩散阻挡层（940）被放置在电 导电材料和目标材料。