-
1.发明授权公开(公告)号：US06806498B2
公开(公告)日：2004-10-19
申请号：US10218310
申请日：2002-08-15
申请人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko Mino
发明人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko Mino
IPC分类号： H01L31036
CPC分类号： H01L21/02532 , H01L21/02609 , H01L21/02683 , H01L21/02686 , H01L21/02689 , H01L21/02691 , H01L21/2026 , H01L21/316 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
摘要翻译： 在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。 首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率 之后，上绝缘层203被图案化，从而在其上形成多个条纹。 随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。
-
2.发明授权公开(公告)号：US06528397B1
公开(公告)日：2003-03-04
申请号：US09581768
申请日：2000-06-16
申请人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko MIno
发明人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko MIno
IPC分类号： H01L2136
CPC分类号： H01L21/02532 , H01L21/02609 , H01L21/02683 , H01L21/02686 , H01L21/02689 , H01L21/02691 , H01L21/2026 , H01L21/316 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
摘要翻译： 在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。 首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率 之后，上绝缘层203被图案化，从而在其上形成多个条纹。 随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。
-
公开(公告)号：US06506669B1
公开(公告)日：2003-01-14
申请号：US09720679
申请日：2000-12-29
IPC分类号： H01L213205
CPC分类号： H01L21/02675 , G02F1/1368 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L21/2026 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： There are reduced degradation of the performance of a transistor element, variations in the quality thereof, and the like resulting from the surface roughness of a polycrystalline silicon thin film formed by laser annealing, particularly from the presence of portions in which tramp materials are segregated produced in the rough portions. For this purpose, (1) The projections at the surface portion of the polycrystalline silicon thin film and the portions in which the tramp materials are segregated after laser annealing are chemically, mechanically graded. (2) Likewise, a heat treatment is performed to grow a crystal and planarize the rough portions, while removing the tramp materials in the surface.
摘要翻译： 由于激光退火形成的多晶硅薄膜的表面粗糙度，特别是在产生杂质材料的部分的存在下，晶体管元件的性能降低，其质量的变化等等 在粗糙的部分。 为此，（1）多晶硅薄膜的表面部分的突起和激光退火后的杂质材料分离的部分是化学，机械分级的。（2）同样地，进行热处理以生长 晶体并平坦化粗糙部分，同时去除表面中的杂质材料。
-
4.发明授权公开(公告)号：US08058951B2
公开(公告)日：2011-11-15
申请号：US11997178
申请日：2006-09-22
IPC分类号： H03H7/00
CPC分类号： H05K1/16 , H01L23/66 , H01L27/016 , H01L2924/0002 , H03H7/0115 , H03H7/175 , H05K1/162 , H05K1/165 , H05K3/4614 , H05K2201/0317 , H05K2201/086 , H05K2201/09763 , H05K2203/1189 , Y10T29/49155 , H01L2924/00
摘要： A configuration includes a first sheet substrate, on which a first thin film electronic component is formed on at least one main face, and an external connection terminal for connecting to an external circuit is formed one main face or the other face; a second sheet substrate, on which a second thin film electronic component is formed on at least one face; an insulator connection resin layer for fixing the first sheet substrate and the second sheet substrate opposing the first thin film electronic component against the second thin film electronic component; and an interlayer connection conductor for electrically connecting electrode terminals, which have been set in advance, of the first thin film electronic component and the second thin film electronic component.
摘要翻译： 一种构造包括：第一薄片基板，其上形成有至少一个主面上的第一薄膜电子部件，并且用于连接到外部电路的外部连接端子形成为一个主面或另一个面; 第二片基板，在至少一个面上形成有第二薄膜电子部件; 绝缘体连接树脂层，用于将第一薄片基板和与第一薄膜电子部件相对的第二薄片基板固定在第二薄膜电子部件上; 以及用于电连接第一薄膜电子部件和第二薄膜电子部件的预先设定的电极端子的层间连接导体。
-
5.发明申请公开(公告)号：US20100090781A1
公开(公告)日：2010-04-15
申请号：US11997178
申请日：2006-09-22
CPC分类号： H05K1/16 , H01L23/66 , H01L27/016 , H01L2924/0002 , H03H7/0115 , H03H7/175 , H05K1/162 , H05K1/165 , H05K3/4614 , H05K2201/0317 , H05K2201/086 , H05K2201/09763 , H05K2203/1189 , Y10T29/49155 , H01L2924/00
摘要： To provide a configuration including a first sheet substrate, on which a first thin film electronic component is formed on at least one main face, and an external connection terminal for connecting to an external circuit is formed one main face or the other face; a second sheet substrate, on which a second thin film electronic component is formed on at least one face; an insulator connection resin layer for fixing the first sheet substrate and the second sheet substrate opposing the first thin film electronic component against the second thin film electronic component; and an interlayer connection conductor for electrically connecting electrode terminals, which have been set in advance, of the first thin film electronic component and the second thin film electronic component.
摘要翻译： 为了提供一种构造，其包括在至少一个主面上形成有第一薄膜电子部件的第一片状基板和用于连接到外部电路的外部连接端子，形成为一个主面或另一个面; 第二片基板，在至少一个面上形成有第二薄膜电子部件; 绝缘体连接树脂层，用于将第一薄片基板和与第一薄膜电子部件相对的第二薄片基板固定在第二薄膜电子部件上; 以及用于电连接第一薄膜电子部件和第二薄膜电子部件的预先设定的电极端子的层间连接导体。
-
6.发明授权
公开(公告)号：US5471060A
公开(公告)日：1995-11-28
申请号：US220450
申请日：1994-03-30
摘要： A pyroelectric infrared radiation detector for detecting the intensity of infrared radiation with a pyroelectric element. The pyroelectric infrared radiation detector comprises a substrate made of a single crystal material and an infrared radiation detecting structure which comprises a first electrode disposed on the substrate, a pyroelectric thin film disposed on the first electrode, and a second electrode disposed on the pyroelectric thin film for absorption of infrared radiation. The substrate has a recess provided in the upper surface thereof where the infrared radiation detecting structure is seated. A method of producing the pyroelectric infrared radiation detector comprises a first step of forming a first electrode on one surface of a substrate, a second step of forming a pyroelectric thin film on the first electrode, a third step of forming a second electrode on the pyroelectric thin film, a fourth step of providing etching apertures in the first electrode which is open to the substrate, and a fifth step of providing by wet etching process a recess(es) in the surface of the substrate where the first electrode is seated.
摘要翻译： 一种用热电元件检测红外辐射强度的热电红外辐射检测器。 热电红外线辐射检测器包括由单晶材料制成的基板和红外线检测结构，其包括设置在基板上的第一电极，设置在第一电极上的热电薄膜和设置在热电薄膜上的第二电极 用于吸收红外辐射。 衬底在其上表面设置有红外辐射检测结构就座的凹部。 制造热释电红外线检测器的方法包括：在基板的一个表面上形成第一电极的第一工序;在所述第一电极上形成热电薄膜的第二工序;在所述第一电极上形成第二电极的第三工序; 在第一电极中提供蚀刻孔的第四步骤，该第一电极对衬底开放;以及第五步骤，通过湿法蚀刻工艺提供第一电极所在的衬底表面中的凹部。
-
公开(公告)号：US06812490B2
公开(公告)日：2004-11-02
申请号：US10608000
申请日：2003-06-30
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78621 , H01L29/78624 , H01L29/78627
摘要： The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.
摘要翻译： 本发明提供一种具有优异性能的LDD型TFT，特别是对于液晶显示单元。 为此，顶栅型LDDTFT栅电极通过化学反应或电镀转换成两级结构，此外，形成在源电极侧稍微突出的形状 ，或者漏电极侧相对于其它部分。 通过使用具有这种结构和形状的电极作为掩模来注入杂质。 在注入杂质之前，除去栅极绝缘膜，形成用于防止氢气进入稀释的Ti膜，底栅侧的LDD-TFT也是如此。
-
公开(公告)号：US06331476B1
公开(公告)日：2001-12-18
申请号：US09316017
申请日：1999-05-21
IPC分类号： H01L2120
CPC分类号： H01L29/66757 , H01L21/31116 , H01L21/76802 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78684
摘要： In producing a thin film transistor used for such devices as a large-sized liquid crystal display panel with a high pixel density, a leftover of an insulating film caused by insufficient etching and a loss of a semiconductor layer caused by overetching are prevented, and a reliable electrical contact between the source and drain electrodes and the semiconductor layer is achieved. These are achieved by (a) forming a contact hole region of a silicon film so that the region has a larger thickness, for example, by making the film to have a plurality of layers, and (b) providing a silicide layer between an electrode metal and the semiconductor layer.
摘要翻译： 在制造用于像素密度高的大尺寸液晶显示面板这样的器件的薄膜晶体管时，防止由蚀刻不足引起的绝缘膜残留和由过蚀刻引起的半导体层损失，并且 实现了源漏电极和半导体层之间的可靠的电接触。 这些是通过（a）形成硅膜的接触孔区域，使得该区域具有较大的厚度，例如通过使膜具有多个层，以及（b）在电极之间提供硅化物层 金属和半导体层。
-
公开(公告)号：US06624473B1
公开(公告)日：2003-09-23
申请号：US09700132
申请日：2000-11-09
IPC分类号： H01L2976
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78621 , H01L29/78624 , H01L29/78627
摘要： The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.
摘要翻译： 本发明提供一种具有优异性能的LDD型TFT，特别是对于液晶显示单元。 为此，顶栅型LDDTFT栅电极通过化学反应或电镀转换成两级结构，此外，形成在源电极侧稍微突出的形状 ，或者漏电极侧相对于其它部分。 通过使用具有这种结构和形状的电极作为掩模来注入杂质。 在注入杂质之前，除去栅极绝缘膜，形成用于防止氢气进入稀释的Ti膜，底栅侧的LDD-TFT也是如此。
-
公开(公告)号：US5662818A
公开(公告)日：1997-09-02
申请号：US501932
申请日：1995-07-31
摘要： A pyroelectric infrared radiation detector for detecting the intensity of infrared radiation with a pyroelectric element is provided. The pyroelectric infrared radiation detector comprises a substrate made of a single crystal material such as (100) magnesium oxide and an infrared radiation detecting structure which comprises a first electrode disposed on the substrate, a pyroelectric thin film disposed on the first electrode, and a second electrode disposed on the pyroelectric thin film for absorption of infrared radiation. The substrate has a recess provided in the upper surface thereof where the infrared radiation detecting structure is seated. A method of producing the pyroelectric infrared radiation detector comprises a first step of forming a first electrode on one surface of a substrate, a second step of forming a pyroelectric thin film on the first electrode, a third step of forming a second electrode on the pyroelectric thin film, a fourth step of providing etching apertures in the first electrode which are open to the substrate, and a fifth step of providing by wet etching process at least one recess in the surface of the substrate where the first electrode is seated.
摘要翻译： 提供了一种用热电元件检测红外辐射强度的热电红外辐射检测器。 热电红外辐射检测器包括由诸如（100）氧化镁的单晶材料制成的衬底和包括设置在衬底上的第一电极和设置在第一电极上的热电薄膜的红外辐射检测结构，以及第二 设置在热电薄膜上用于吸收红外辐射的电极。 衬底在其上表面设置有红外辐射检测结构就座的凹部。 制造热释电红外线检测器的方法包括：在基板的一个表面上形成第一电极的第一工序;在所述第一电极上形成热电薄膜的第二工序;在所述第一电极上形成第二电极的第三工序; 薄膜，在第一电极中提供对基板开放的蚀刻孔的第四步骤;以及第五步骤，通过湿法蚀刻工艺提供在第一电极就座的基板的表面中的至少一个凹部。
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.03 秒)
