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71 条记录 (耗时 0.031 秒)

    Half-tone stacked film, photomask-blank, photomask and fabrication method thereof
    12.
    发明授权
    Half-tone stacked film, photomask-blank, photomask and fabrication method thereof 有权
    半色调叠层薄膜，光掩模空白，光掩模及其制造方法

    公开(公告)号：US07625677B2

    公开(公告)日：2009-12-01

    申请号：US11346224

    申请日：2006-02-03

    申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Motohiko Morita ,  Tadashi Saga

    发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Motohiko Morita ,  Tadashi Saga

    IPC分类号： G03F1/00

    CPC分类号： G03F1/54 ,  G03F1/32 ,  Y10T428/31616

    摘要： A half-tone stacked film is designed so as to have a stacked structure of a first half-tone film and a second half-tone film, and the film thickness d, the refractive index n to exposure light and the extinction coefficient k of these half-tone films are designed so that one of these half-tone films becomes a phase advancement film and the other becomes a phase retardation film. When the film thickness (nm), the refractive index, and the extinction coefficient of the phase advancement film are represented by d(+), n(+) and k(+), respectively; and the film thickness (nm), the refractive index, and the extinction coefficient of the phase retardation film are d(−), n(−), and k(−), respectively; the phase advancement film has the relationship of k(+)>a1·n(+)+b1, and the phase retardation film has the relationship of k(−)

    摘要翻译： 半色调叠层膜被设计为具有第一半色调膜和第二半色调膜的堆叠结构，并且膜厚度d，这些的曝光光的折射率n与曝光光和消光系数k 半色调膜被设计成使得这些半色调膜中的一个成为相位前进膜，而另一个成为相位延迟膜。 当相位推进膜的膜厚（nm），折射率和消光系数分别由d（+），n（+）和k（+）表示时， 相位延迟膜的膜厚（nm），折射率和消光系数分别为d（ - ），n（ - ）和k（ - ）; 相位推进膜具有k（+）> a1.n（+）+ b1的关系，相位延迟膜具有k（ - ）

    Photomask blank, photomask and fabrication method thereof
    13.
    发明授权
    Photomask blank, photomask and fabrication method thereof 有权
    光掩模坯料，光掩模及其制造方法

    公开(公告)号：US07625676B2

    公开(公告)日：2009-12-01

    申请号：US11255135

    申请日：2005-10-21

    申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima

    发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima

    IPC分类号： G03F1/00 ,  B32B17/00

    CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/58 ,  G03F1/80 ,  Y10T428/31616

    摘要： A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

    摘要翻译： 在光学透明基板的一个主平面上形成可遮光膜，并且可遮光膜具有覆盖在第一可遮光膜上的第一可遮光膜和第二可遮光膜。 第一可遮光膜是通过氟基（F系）干蚀刻基本上不被蚀刻的膜，主要由氧化铬，氮化铬，氮氧化铬等构成。 第二可遮光膜是主要由可以通过F-基干蚀刻蚀刻的含硅化合物组成的膜，例如氧化硅，氮化硅，氮氧化硅，硅/过渡金属氧化物，硅/ 过渡金属氮化物或硅/过渡金属氮氧化物。

    Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof
    14.
    发明授权
    Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof 有权
    相移光掩模 - 空白，相移光掩模及其制造方法

    公开(公告)号：US07622227B2

    公开(公告)日：2009-11-24

    申请号：US11431550

    申请日：2006-05-11

    申请人： Yukio Inazuki ,  Hiroki Yoshikawa ,  Tamotsu Maruyama ,  Satoshi Okazaki

    发明人： Yukio Inazuki ,  Hiroki Yoshikawa ,  Tamotsu Maruyama ,  Satoshi Okazaki

    IPC分类号： G03F1/00

    CPC分类号： G03F1/32 ,  Y10T428/31616

    摘要： On a substrate that is transparent to exposure light, a phase-shift multilayer film including a stack of two layers of a metal silicide compound is formed. A stabilized oxide layer is formed on the surface of the metal silicide compound layer close to the top surface. The layer close to the substrate (the lower layer) of the phase-shift multilayer film is made of a relatively-metal-rich metal silicide compound, and the upper layer is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer. Thus, the stabilized oxide layer is highly chemically stable and has a high chemical resistance.

    摘要翻译： 在对曝光光透明的基板上，形成包括两层金属硅化物的叠层的相移多层膜。 在靠近顶面的金属硅化物层的表面上形成稳定的氧化物层。 相移多层膜的基板（下层）的层由相对富金属的金属硅化物构成，上层由相对不富金属的金属硅化物构成。 稳定的氧化物层具有金属不足的组成，其金属含量等于或小于下层的金属含量的三分之一。 因此，稳定的氧化物层是高度化学稳定的并且具有高的耐化学性。

    Halftone phase shift mask blank, halftone phase shift mask and their preparation
    16.
    发明申请
    Halftone phase shift mask blank, halftone phase shift mask and their preparation 有权
    半色调相移掩模空白，半色调相移掩模及其制备

    公开(公告)号：US20050186487A1

    公开(公告)日：2005-08-25

    申请号：US11062438

    申请日：2005-02-23

    申请人： Yukio Inazuki ,  Hiroki Yoshikawa ,  Satoshi Okazaki

    发明人： Yukio Inazuki ,  Hiroki Yoshikawa ,  Satoshi Okazaki

    IPC分类号： G03C5/00 ,  G03F1/32 ,  G03F1/68 ,  G03F1/80 ,  G03F9/00 ,  H01L21/027

    CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/68

    摘要： In a halftone phase shift mask blank comprising a halftone phase shift film on a substrate which is transparent to exposure light, the halftone phase shift film comprises a metal, silicon, and optionally oxygen and nitrogen. The halftone phase shift film experiences a phase difference change of up to 1 deg. and a transmittance change of up to 0.2% before and after it is exposed to light in a cumulative dose of 1 kJ/cm2. The halftone phase shift film has excellent resistance to exposure light, specifically high-energy exposure light of short wavelength such as ArF or F2 laser beam (193 or 157 nm).

    摘要翻译： 在包括对曝光光透明的衬底上的半色调相移膜的半色调相移掩模坯料中，半色调相移膜包括金属，硅以及任选的氧和氮。 半色调相移薄膜的相位差变化达到1度。 并且以1kJ / cm 2的累积剂量暴露于光之前和之后的透射率变化高达0.2％。 半色调相移膜具有优异的耐曝光性，特别是短波长的高能量曝光光，例如ArF或F 2激光束（193或157nm）。

    Photomask blank
    18.
    发明授权
    Photomask blank 有权
    光掩模空白

    公开(公告)号：US07790339B2

    公开(公告)日：2010-09-07

    申请号：US11785689

    申请日：2007-04-19

    申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yuichi Fukushima

    发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Tadashi Saga ,  Yuichi Fukushima

    IPC分类号： G03F1/00

    CPC分类号： G03F1/58 ,  G03F1/32 ,  Y10T428/31616

    摘要： A photomask blank has a light-shielding film composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy.

    摘要翻译： 光掩模坯料具有由单层含有过渡金属，硅和氮的材料或多层构成的遮光膜，所述多层包括至少一层由含有过渡金属，硅和氮的材料制成的层，以及 具有一种或多种铬基材料膜。 高过渡金属含量确保电导率，防止光掩模生产过程中的充电，并且还为光掩模生产中的清洁提供足够的化学稳定性。 遮光膜在氯和氧的存在下对铬基材料膜的干蚀刻具有良好的耐蚀性，因此确保高的加工精度。

    Photomask blank and photomask
    20.
    发明授权
    Photomask blank and photomask 有权
    光掩模空白和光掩模

    公开(公告)号：US07691546B2

    公开(公告)日：2010-04-06

    申请号：US11662183

    申请日：2005-09-08

    申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

    发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

    IPC分类号： G03F1/00

    CPC分类号： G03F1/46 ,  G03F1/58 ,  G03F1/68

    摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

    摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。