公开(公告)号：US07579678B2

公开(公告)日：2009-08-25

申请号：US11848837

申请日：2007-08-31

申请人： Toshihisa Suzuki ,  Junya Suzuki

发明人： Toshihisa Suzuki ,  Junya Suzuki

IPC分类号： H01L23/02

CPC分类号： H04R19/005

摘要： A semiconductor microphone unit includes a semiconductor microphone chip having a diaphragm covering an inner hole of a support. The support is adhered onto the surface of a support substrate whose thermal expansion coefficient higher than the thermal expansion coefficient of the support via a thermosetting adhesive in such a way that the diaphragm is positioned opposite to the surface of the support substrate. The thermosetting adhesive has a tensile elastic modulus allowing a contraction of the support substrate to be transmitted to the support in a hardened state when the semiconductor microphone chip is cooled together with the support substrate. Thus, it is possible to reduce the tensile stress of the diaphragm, which occurs during the manufacturing of the semiconductor microphone chip, thus preventing the diaphragm from being unexpectedly reduced in strength; hence, it is possible to improve the sensitivity of the semiconductor microphone chip.

摘要翻译： 半导体麦克风单元包括具有覆盖支撑件的内孔的隔膜的半导体麦克风芯片。 支撑体以热膨胀系数高于载体的热膨胀系数通过热固性粘合剂粘附到支撑基板的表面上，使得隔膜与支撑基板的表面相对定位。 当半导体麦克风芯片与支撑基板一起冷却时，热固性粘合剂具有允许支撑基板的收缩在硬化状态下传递到支撑件的拉伸弹性模量。 因此，可以减少在制造半导体麦克风芯片期间发生的隔膜的拉伸应力，从而防止隔膜意外地降低强度; 因此，可以提高半导体麦克风芯片的灵敏度。

公开(公告)号：US06707298B2

公开(公告)日：2004-03-16

申请号：US10281178

申请日：2002-10-28

申请人： Toshihisa Suzuki ,  Hideki Sato ,  Makoto Kaneko

发明人： Toshihisa Suzuki ,  Hideki Sato ,  Makoto Kaneko

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  G01R33/093

摘要： A magnetic sensor comprises a thin-film-like magnetic tunnel effect element (magnetoresistive effect element) 11. A coil 21 is disposed in a plane under the magnetic tunnel effect element 11 and parallel to a thin-planar film surface of the element. The coil 21 is a double spiral type coil which includes a first spiral conductor portion 21-1 and a second spiral conductor portion 21-2. The magnetic tunnel effect element 11 is disposed between a spiral center P1 of the first conductor portion 21-1 and a spiral center P2 of the second conductor portion 21-2 in a plan view. The first and second conductor portions 21-1 and 21-2 are connected such that electric currents in the same direction pass through a part of the first conductor portion 21-1 that overlaps the magnetic tunnel effect element 11 in a plan view and through a part of the second conductor portion 21-2 that overlaps the magnetic tunnel effect element 11 in a plan view.

摘要翻译： 磁传感器包括薄膜状磁通效应元件（磁阻效应元件）11。线圈21设置在磁隧道效应元件11的下方并平行于元件的薄平面膜表面。 线圈21是包括第一螺旋导体部21-1和第二螺旋导体部21-2的双螺旋型线圈。 磁通效应元件11在平面图中设置在第一导体部分21-1的螺旋形中心P1和第二导体部分21-2的螺旋形中心P2之间。 第一和第二导体部分21-1和21-2被连接成使得相同方向的电流在平面图中通过与磁通道效应元件11重叠的第一导体部分21-1的一部分，并且通过 第二导体部分21-2的一部分在俯视图中与磁隧道效应元件11重叠。

公开(公告)号：US5836797A

公开(公告)日：1998-11-17

申请号：US687759

申请日：1996-07-26

申请人： Toshihisa Suzuki ,  Koji Ogata

发明人： Toshihisa Suzuki ,  Koji Ogata

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC分类号： H01J9/025

摘要： A gate electrode material film is deposited on a substrate and formed with an opening for each pixel area, and thereafter a first insulating film and an emitter electrode material film are deposited. Slits for separation of emitter lines are formed by etching the emitter electrode material film at the area intersecting with gate lines to be later formed. Thereafter, a second insulating film is deposited and an element substrate is adhered to the second insulating film to remove the initial substrate. The gate electrode material film is thereafter patterned to form a plurality of gate lines and the emitter electrode material film is patterned to form a plurality of emitter lines.

摘要翻译： 栅极电极材料膜沉积在衬底上并形成有用于每个像素区的开口，然后沉积第一绝缘膜和发射极电极材料膜。 用于分离发射极线的狭缝通过在与稍后形成的栅极线相交的区域上蚀刻发射极电极材料膜而形成。 此后，沉积第二绝缘膜，并将元件衬底粘附到第二绝缘膜以去除初始衬底。 此后，栅极电极材料膜被图案化以形成多条栅极线，并且将发射极电极材料膜图案化以形成多个发射极线。

公开(公告)号：US20090185700A1

公开(公告)日：2009-07-23

申请号：US12290193

申请日：2008-10-28

申请人： Toshihisa Suzuki

发明人： Toshihisa Suzuki

IPC分类号： H04R11/04

CPC分类号： H04R19/005 ,  H04R19/04 ,  H04R31/00

摘要： A vibration transducer (or a pressure transducer) is constituted of a cover, a plate, a diaphragm, and a substrate having a back cavity. The diaphragm is positioned above the substrate so as to cover the opening of the back cavity. The plate has a radial gear-like shape constituted of a center portion positioned just above the diaphragm and a plurality of joints. The cover horizontally surrounds the plate with slits therebetween so that the cover is electrically separated from the plate and is positioned above the periphery of the diaphragm. A plurality of pillar structures joins the plurality of joints of the plate so as to support the plate above the diaphragm with a gap layer therebetween. By reducing the widths of slits, it is possible to prevent foreign matter from entering into the air layer between the plate and the diaphragm.

摘要翻译： 振动传感器（或压力传感器）由盖，板，隔膜和具有后腔的基板构成。 隔膜位于基板上方以覆盖后腔的开口。 该板具有由位于隔膜正上方的中心部分和多个接头构成的径向齿轮状。 盖子在其间水平地围绕板，其间具有狭缝，使得盖子与板电隔离并且位于隔膜的周边上方。 多个柱结构连接板的多个接头，以便在隔膜之间具有间隙层支撑隔膜上方的板。 通过减小狭缝的宽度，可以防止异物进入板和隔膜之间的空气层。

公开(公告)号：US07423163B2

公开(公告)日：2008-09-09

申请号：US11902349

申请日：2007-09-20

申请人： Hidetaka Uehara ,  Tomomi Suganuma ,  Satoshi Negishi ,  Toshihisa Suzuki

发明人： Hidetaka Uehara ,  Tomomi Suganuma ,  Satoshi Negishi ,  Toshihisa Suzuki

IPC分类号： C11C3/14 ,  C11B3/02

CPC分类号： C11C1/007 ,  A23V2002/00 ,  C11C1/005 ,  C11C3/02 ,  A23V2250/1866

摘要： An easy and inexpensive process by which a concentrate of a given unsaturated fatty acid can be obtained from a mixture which has conventionally been difficult to concentrate. The process, which is for producing a concentrate of a desired isomer (a) from a conjugated fatty acid mixture (A), is characterized by comprising: a step in which the conjugated fatty acid mixture (A) is mixed with at least one unsaturated fatty acid (B) to obtain a mixture solution containing the isomer (a) dissolved therein; a crystallization step in which either crystals rich in the isomer (a) or crystals poor in the isomer (a) are precipitated from the mixture solution; and a solid-liquid separation step for obtaining the crystals rich in the isomer (a) or for obtaining a solution rich in the isomer (a) by removing the crystals poor in the isomer (a).

摘要翻译： 一种容易且廉价的方法，通过该方法可以从常规难以浓缩的混合物中获得给定的不饱和脂肪酸的浓缩物。 用于由共轭脂肪酸混合物（A）生产所需异构体（a）的浓缩物的方法的特征在于包括：将共轭脂肪酸混合物（A）与至少一种不饱和脂肪酸混合物 脂肪酸（B），得到含有溶解于其中的异构体（a）的混合溶液; 从混合溶液中析出析出富含异构体（a）或异构体（a）的晶体不足的晶体的结晶步骤; 以及固体 - 液体分离步骤，用于通过除去异构体（a）中的不稳定的晶体来获得富含异构体（a）的晶体或用于获得富含异构体（a）的溶液。

公开(公告)号：US20080203560A1

公开(公告)日：2008-08-28

申请号：US12011871

申请日：2008-01-30

申请人： Toshihisa Suzuki

发明人： Toshihisa Suzuki

IPC分类号： H01L23/34

CPC分类号： H04R19/00 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device is produced using a housing having a hollow cavity for embracing a semiconductor sensor chip (e.g., a microphone chip) for detecting pressure variations and an LSI chip for driving the semiconductor sensor chip, both of which are mounted on a chip mount surface. An opening allowing the cavity to communicate with external space is formed at a prescribed position of the chip mount surface within the housing, wherein the LSI chip is positioned above the opening so as to cover at least a part of the opening of the housing. Thus, it is possible to reduce negative influences of environmental factors applied to the semiconductor sensor chip without using an environmental barrier, and it is possible to downsize the semiconductor device.

摘要翻译： 使用具有用于包围用于检测压力变化的半导体传感器芯片（例如，麦克风芯片）和用于驱动半导体传感器芯片的LSI芯片的外壳具有中空腔的半导体器件，两者都安装在芯片安装表面 。 在壳体内的芯片安装面的规定位置形成允许空腔与外部空间连通的开口，其中，LSI芯片位于开口的上方，以覆盖壳体的开口的至少一部分。 因此，可以减少施加在半导体传感器芯片上的环境因素的负面影响而不使用环境屏障，并且可以减小半导体器件的尺寸。

公开(公告)号：US20080027238A1

公开(公告)日：2008-01-31

申请号：US11902349

申请日：2007-09-20

申请人： Hidetaka Uehara ,  Tomomi Suganuma ,  Satoshi Negishi ,  Toshihisa Suzuki

发明人： Hidetaka Uehara ,  Tomomi Suganuma ,  Satoshi Negishi ,  Toshihisa Suzuki

IPC分类号： C07C51/347

CPC分类号： C11C1/007 ,  A23V2002/00 ,  C11C1/005 ,  C11C3/02 ,  A23V2250/1866

摘要： An easy and inexpensive process by which a concentrate of a given unsaturated fatty acid can be obtained from a mixture which has conventionally been difficult to concentrate. The process, which is for producing a concentrate of a desired isomer (a) from a conjugated fatty acid mixture (A), is characterized by comprising: a step in which the conjugated fatty acid mixture (A) is mixed with at least one unsaturated fatty acid (B) to obtain a mixture solution containing the isomer (a) dissolved therein; a crystallization step in which either crystals rich in the isomer (a) or crystals poor in the isomer (a) are precipitated from the mixture solution; and a solid-liquid separation step for obtaining the crystals rich in the isomer (a) or for obtaining a solution rich in the isomer (a) by removing the crystals poor in the isomer (a).

公开(公告)号：US07078238B2

公开(公告)日：2006-07-18

申请号：US10458631

申请日：2003-06-11

申请人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

发明人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

IPC分类号： H01L21/00

CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L27/22

摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

公开(公告)号：US06992869B2

公开(公告)日：2006-01-31

申请号：US09777325

申请日：2001-02-06

申请人： Toshihisa Suzuki ,  Naoshi Horiai

发明人： Toshihisa Suzuki ,  Naoshi Horiai

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909

摘要： In order to realize a magnetic resistance device having a high magnetic resistance change rate, satisfactory production yield and a low level of variation in production, a pair of magnetic tunnel resistance devices 2 employing a laminated structure comprised of antiferromagnetic film 8, lower magnetic layer 9, barrier film 10 and upper magnetic layer 11 are independently and separately formed by ion beam etching on a lower electrode 3 and in common with said lower electrode 3 provided on a substrate 5. A pair of independent upper electrodes 4 are formed on upper magnetic layer 11. As a result, a pair of magnetic tunnel resistance devices 2 are formed connected in series on substrate 5.

摘要翻译： 为了实现具有高磁阻变化率，令人满意的生产率和低生产变化水平的磁阻装置，采用由反铁磁膜8，下磁层9 ，阻挡膜10和上磁性层11通过在下电极3上的离子束蚀刻和与设置在基板5上的所述下电极3共同地分别形成。 一对独立的上电极4形成在上磁性层11上。 结果，形成了一对串联连接在基板5上的磁通电阻装置2。

公开(公告)号：US06734671B2

公开(公告)日：2004-05-11

申请号：US10091592

申请日：2002-03-07

申请人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

发明人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

IPC分类号： G01R3309

CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L27/22

摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

摘要翻译： 在由硅制成的衬底的绝缘表面上形成磁阻器件。 这些器件通过使用形成在衬底表面上的布线层的绝缘膜串联连接。 形成用于钝化的绝缘膜以覆盖器件和布线层。 通过有机膜在钝化绝缘膜上形成Ni-Fe合金的磁屏蔽层，用于缓解热应力以覆盖其中一个器件。 在从晶片去除包含磁阻器件和其他部件的传感器芯片之后，通过热处理将芯片通过Ag糊层结合到引线框架。 优选地，磁屏蔽层由Ni含量为69％以下的Ni-Fe合金制成。