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公开(公告)号:US20210397675A1
公开(公告)日:2021-12-23
申请号:US17013646
申请日:2020-09-06
Applicant: Industrial Technology Research Institute
Inventor: Chih-Sheng Lin , Jian-Wei Su , Tuo-Hung Hou , Sih-Han Li , Fu-Cheng Tsai , Yu-Hui Lin
IPC: G06F17/16 , G11C11/412
Abstract: A computing in memory (CIM) cell includes a memory cell circuit, a first semiconductor element, a second semiconductor element, and a third semiconductor element. A first terminal of the first semiconductor element is coupled to a first computing bit-line. A control terminal of the first semiconductor element is coupled to a computing word-line. A control terminal of the second semiconductor element is coupled to the memory cell circuit. A first terminal of the second semiconductor element is coupled to a second terminal of the first semiconductor element. A first terminal of the third semiconductor element is coupled to a second terminal of the second semiconductor element. A second terminal of the third semiconductor element is coupled to a second computing bit-line. A control terminal of the third semiconductor element receives a bias voltage.
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公开(公告)号:US20210257017A1
公开(公告)日:2021-08-19
申请号:US16850016
申请日:2020-04-16
Applicant: Industrial Technology Research Institute
Inventor: Fu-Cheng Tsai , Heng-Yuan Lee , Chih-Sheng Lin , Jian-Wei Su , Tuo-Hung Hou
IPC: G11C11/408 , G11C11/4091 , G11C11/4099 , G11C11/56
Abstract: A computation operator in memory and an operation method thereof are provided. The computation operator in memory includes a word line calculator, a decision-maker and a sense amplifier. The word line calculator calculates a number of enabled word lines of a memory. The decision-maker generates a plurality of reference signals according to at least one of the number of enabled word lines and a used size of the memory, the reference signals are configured to set a distribution range. The sense amplifier receives a readout signal of the memory, and obtains a computation result by converting the readout signal according to the reference signals.
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