Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
    11.
    发明授权
    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
    包括薄膜晶体管的电致发光器件和制造电致发光器件的方法

    公开(公告)号:US07501658B2

    公开(公告)日:2009-03-10

    申请号:US11858287

    申请日:2007-09-20

    CPC classification number: H01L27/3244 H01L27/3262

    Abstract: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

    Abstract translation: 一种电致发光器件,包括电连接到电致发光元件的电致发光元件和薄膜晶体管。 薄膜晶体管包括形成在衬底上的栅电极,形成在栅电极上的绝缘层,以及形成在绝缘层上的第一半导体图案。 在第一半导体层上形成蚀刻停止层。 在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案,并且在蚀刻停止层的另一侧上形成第三半导体图案。 在第二半导体图案上形成源电极,在第三半导体图案上形成漏电极。

    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
    12.
    发明申请
    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
    包括薄膜晶体管的电致发光器件和制造电致发光器件的方法

    公开(公告)号:US20050014379A1

    公开(公告)日:2005-01-20

    申请号:US10761607

    申请日:2004-01-21

    CPC classification number: H01L27/3244 H01L27/3262

    Abstract: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

    Abstract translation: 一种电致发光器件,包括电连接到电致发光元件的电致发光元件和薄膜晶体管。 薄膜晶体管包括形成在衬底上的栅电极,形成在栅电极上的绝缘层,以及形成在绝缘层上的第一半导体图案。 在第一半导体层上形成蚀刻停止层。 在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案,并且在蚀刻停止层的另一侧上形成第三半导体图案。 在第二半导体图案上形成源电极,在第三半导体图案上形成漏电极。

    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
    13.
    发明授权
    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
    包括薄膜晶体管的电致发光器件和制造电致发光器件的方法

    公开(公告)号:US07994507B2

    公开(公告)日:2011-08-09

    申请号:US12848648

    申请日:2010-08-02

    CPC classification number: H01L27/3244 H01L27/3262

    Abstract: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

    Abstract translation: 一种电致发光器件,包括电连接到电致发光元件的电致发光元件和薄膜晶体管。 薄膜晶体管包括形成在衬底上的栅电极,形成在栅电极上的绝缘层,以及形成在绝缘层上的第一半导体图案。 在第一半导体层上形成蚀刻停止层。 在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案,并且在蚀刻停止层的另一侧上形成第三半导体图案。 在第二半导体图案上形成源电极,在第三半导体图案上形成漏电极。

    Display device and driving method thereof
    14.
    发明授权
    Display device and driving method thereof 有权
    显示装置及其驱动方法

    公开(公告)号:US07773057B2

    公开(公告)日:2010-08-10

    申请号:US11101012

    申请日:2005-04-07

    Abstract: A display device is provided, which includes: light emitting elements; switching transistors transmitting data signals in response to scanning signals; driving transistors, each driving transistor electrically connected to a driving signal line and one of the switching transistors and supplying a current to the light emitting elements in response to an output signal of the one of the switching transistors and the driving signal of the driving signal line; and a first capacitor electrically connected between each driving transistor and each driving signal line; and a second capacitor electrically connected between each light emitting element and each driving transistor, wherein the first and the second capacitors transmit the driving signal by capacitive coupling.

    Abstract translation: 提供了一种显示装置,其包括:发光元件; 开关晶体管响应于扫描信号传输数据信号; 驱动晶体管,每个驱动晶体管电连接到驱动信号线和所述开关晶体管之一,并且响应于所述开关晶体管中的一个的输出信号和所述驱动信号线的驱动信号而向所述发光元件提供电流 ; 以及电连接在每个驱动晶体管和每个驱动信号线之间的第一电容器; 以及电连接在每个发光元件和每个驱动晶体管之间的第二电容器,其中第一和第二电容器通过电容耦合来传输驱动信号。

    ELECTRO-LUMINESCENCE DEVICE INCLUDING A THIN FILM TRANSISTOR AND METHOD OF FABRICATING AN ELECTRO-LUMINESCENCE DEVICE
    15.
    发明申请
    ELECTRO-LUMINESCENCE DEVICE INCLUDING A THIN FILM TRANSISTOR AND METHOD OF FABRICATING AN ELECTRO-LUMINESCENCE DEVICE 有权
    包括薄膜晶体管的电致发光器件和制造电致发光器件的方法

    公开(公告)号:US20090152557A1

    公开(公告)日:2009-06-18

    申请号:US12389058

    申请日:2009-02-19

    CPC classification number: H01L27/3244 H01L27/3262

    Abstract: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

    Abstract translation: 一种电致发光器件,包括电连接到电致发光元件的电致发光元件和薄膜晶体管。 薄膜晶体管包括形成在衬底上的栅电极,形成在栅电极上的绝缘层,以及形成在绝缘层上的第一半导体图案。 在第一半导体层上形成蚀刻停止层。 在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案,并且在蚀刻停止层的另一侧上形成第三半导体图案。 在第二半导体图案上形成源电极,在第三半导体图案上形成漏电极。

    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
    17.
    发明授权
    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
    包括薄膜晶体管的电致发光器件和制造电致发光器件的方法

    公开(公告)号:US07288477B2

    公开(公告)日:2007-10-30

    申请号:US10761607

    申请日:2004-01-21

    CPC classification number: H01L27/3244 H01L27/3262

    Abstract: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

    Abstract translation: 一种电致发光器件,包括电连接到电致发光元件的电致发光元件和薄膜晶体管。 薄膜晶体管包括形成在衬底上的栅电极,形成在栅电极上的绝缘层,以及形成在绝缘层上的第一半导体图案。 在第一半导体层上形成蚀刻停止层。 在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案,并且在蚀刻停止层的另一侧上形成第三半导体图案。 在第二半导体图案上形成源电极,在第三半导体图案上形成漏电极。

    Display device and driving method thereof
    18.
    发明申请
    Display device and driving method thereof 有权
    显示装置及其驱动方法

    公开(公告)号:US20050269958A1

    公开(公告)日:2005-12-08

    申请号:US11101012

    申请日:2005-04-07

    Abstract: A display device is provided, which includes: light emitting elements; switching transistors transmitting data signals in response to scanning signals; driving transistors, each driving transistor electrically connected to a driving signal line and one of the switching transistors and supplying a current to the light emitting elements in response to an output signal of the one of the switching transistors and the driving signal of the driving signal line; and a first capacitor electrically connected between each driving transistor and each driving signal line; and a second capacitor electrically connected between each light emitting element and each driving transistor, wherein the first and the second capacitors transmit the driving signal by capacitive coupling.

    Abstract translation: 提供了一种显示装置,其包括:发光元件; 开关晶体管响应于扫描信号传输数据信号; 驱动晶体管,每个驱动晶体管电连接到驱动信号线和所述开关晶体管之一,并且响应于所述开关晶体管中的一个的输出信号和所述驱动信号线的驱动信号而向所述发光元件提供电流 ; 以及电连接在每个驱动晶体管和每个驱动信号线之间的第一电容器; 以及电连接在每个发光元件和每个驱动晶体管之间的第二电容器,其中第一和第二电容器通过电容耦合来传输驱动信号。

    TFT type optical detecting sensor implementing different TFTs and the fabricating method thereof
    19.
    发明授权
    TFT type optical detecting sensor implementing different TFTs and the fabricating method thereof 失效
    实现不同TFT的TFT型光学检测传感器及其制造方法

    公开(公告)号:US06812054B2

    公开(公告)日:2004-11-02

    申请号:US10319637

    申请日:2002-12-16

    Applicant: In-Su Joo

    Inventor: In-Su Joo

    Abstract: A thin film transistor optical detecting sensor includes an array substrate having a transparent substrate, a plurality of sensor thin film transistors disposed on the transparent substrate, each having a first silicon layer of a first thickness, a plurality of storage capacitors, each connected with a corresponding one of the plurality of sensor thin film transistors, storing charges of an optical current, and a plurality of switch thin film transistors, each having a second silicon layer of a second thickness less than the first thickness.

    Abstract translation: 薄膜晶体管光检测传感器包括具有透明基板的阵列基板,设置在透明基板上的多个传感器薄膜晶体管,每个具有第一厚度的第一硅层,多个存储电容器,分别与 多个传感器薄膜晶体管中的相应一个,存储光电流的电荷,以及多个开关薄膜晶体管,每个开关薄膜晶体管具有小于第一厚度的第二厚度的第二硅层。

    Organic light emitting diode display
    20.
    发明授权
    Organic light emitting diode display 有权
    有机发光二极管显示

    公开(公告)号:US08158989B2

    公开(公告)日:2012-04-17

    申请号:US12699757

    申请日:2010-02-03

    CPC classification number: H01L27/3244 H01L27/3211 H01L27/3262

    Abstract: An organic light emitting diode display includes a plurality of pixels. Each pixel includes a light emitting element and a driving transistor coupled to the light emitting element. The pixels may be arranged in a matrix. The pixels include first pixels, second pixels, and third pixels, the driving transistors of the first to the third pixels occupy different areas, and the light emitting elements of the first to the third pixels occupy substantially equal area.

    Abstract translation: 有机发光二极管显示器包括多个像素。 每个像素包括耦合到发光元件的发光元件和驱动晶体管。 像素可以排列成矩阵。 像素包括第一像素,第二像素和第三像素,第一至第三像素的驱动晶体管占据不同的区域,并且第一至第三像素的发光元件占据基本相等的面积。

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