公开(公告)号：US20200006651A1

公开(公告)日：2020-01-02

申请号：US16022685

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Daniel H. MORRIS ,  Uygar E. AVCI ,  Ian A. YOUNG

IPC: H01L45/00 ,  H01L23/528 ,  H03K19/0175 ,  H01L27/24

Abstract: A routing structure is disclosed. A first wiring line coupled to a programming access device and a routing block driver and receiver enabling device and a second wiring line coupled to a programming access device and a routing block driver and receiver enabling device. An insulator-metal-transistor device that includes a top electrode, a middle electrode and a bottom electrode, coupled at the intersection of the first wiring line and the second wiring line.

公开(公告)号：US20180122478A1

公开(公告)日：2018-05-03

申请号：US15567942

申请日：2015-05-28

Applicant: Intel Corporation

Inventor： Daniel H. MORRIS ,  Uygar E. AVCI ,  Ian A. YOUNG

IPC: G11C14/00 ,  G11C11/22 ,  H01L27/11502

CPC classification number: G11C14/0072 ,  G11C11/221 ,  G11C11/2259 ,  G11C11/2273 ,  G11C11/2275 ,  G11C14/0027 ,  H01L27/11502

Abstract: Described is an apparatus which comprises: a first access transistor controllable by a write word-line (WWL); a second access transistor controllable by a read word-line (RWL); and a ferroelectric cell coupled to the first and second access transistors, wherein the ferroelectric cell is programmable via the WWL and readable via the RWL. Described is a method which comprises: driving a WWL, coupled to a gate terminal of a first access transistor, to cause the first access transistor to turn on; and driving a WBL coupled to a source/drain terminal of the first access transistor, the driven WBL to charge or discharge a storage node coupled to the first access transistor when the first access transistor is turned on, wherein the ferroelectric cell is coupled to the storage node and programmable according to the charged or discharged storage node.