公开(公告)号：US20220415894A1

公开(公告)日：2022-12-29

申请号：US17894968

申请日：2022-08-24

Applicant: Intel Corporation

Inventor： Peter L.D. CHANG ,  Uygar E. AVCI ,  David KENCKE ,  Ibrahim BAN

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/49 ,  H01L29/51 ,  H01L29/16

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.