公开(公告)号：US10418329B2

公开(公告)日：2019-09-17

申请号：US15774937

申请日：2015-12-11

Applicant: Intel Corporation

Inventor： Eric J. Li ,  Timothy A. Gosselin ,  Yoshihiro Tomita ,  Shawna M. Liff ,  Amram Eitan ,  Mark Saltas

IPC: H01L23/538 ,  H01L23/48 ,  H01L23/13 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L23/31

Abstract: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.