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公开(公告)号:US20180337129A1
公开(公告)日:2018-11-22
申请号:US15774937
申请日:2015-12-11
申请人: Intel Corporation
发明人: Eric J. Li , Timothy A. Gosselin , Yoshihiro Tomita , Shawna M. Liff , Amram Eitan , Mark Saltas
IPC分类号: H01L23/538 , H01L21/48 , H01L21/56 , H01L23/31
CPC分类号: H01L23/5381 , H01L21/4853 , H01L21/561 , H01L21/563 , H01L21/568 , H01L23/13 , H01L23/3157 , H01L23/48 , H01L23/5383 , H01L23/5385 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/95 , H01L24/96 , H01L25/0655 , H01L2224/11002 , H01L2224/1182 , H01L2224/12105 , H01L2224/131 , H01L2224/14134 , H01L2224/14177 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2224/1701 , H01L2224/1703 , H01L2224/27002 , H01L2224/3201 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73104 , H01L2224/73204 , H01L2224/81005 , H01L2224/81011 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/83005 , H01L2224/83102 , H01L2224/83104 , H01L2224/92125 , H01L2224/95 , H01L2224/95001 , H01L2224/96 , H01L2924/15153 , H01L2924/15192 , H01L2924/181 , H01L2924/18161 , H01L2224/14131 , H01L2224/11 , H01L2924/00014 , H01L2924/014 , H01L2224/81 , H01L2224/83 , H01L2924/00012 , H01L2224/27
摘要: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.
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公开(公告)号:US20190355666A1
公开(公告)日:2019-11-21
申请号:US16510295
申请日:2019-07-12
申请人: Intel Corporation
发明人: Eric J. Li , Timothy A. Gosselin , Yoshihiro Tomita , Shawna M. Liff , Amram Eitan , Mark Saltas
IPC分类号: H01L23/538 , H01L23/00 , H01L23/31 , H01L21/48 , H01L23/13 , H01L21/56 , H01L23/48 , H01L25/065
摘要: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.
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公开(公告)号:US11676900B2
公开(公告)日:2023-06-13
申请号:US15778398
申请日:2015-12-22
申请人: Intel Corporation
发明人: Eric J. Li , Nitin Deshpande , Shawna M. Liff , Omkar Karhade , Amram Eitan , Timothy A. Gosselin
IPC分类号: H01L25/00 , H01L23/538 , H01L23/48 , H01L25/065 , H01L23/36 , H01L23/13 , H01L21/48 , H01L23/00 , H01L23/367
CPC分类号: H01L23/5381 , H01L21/4853 , H01L21/4871 , H01L23/13 , H01L23/36 , H01L23/48 , H01L23/5385 , H01L23/5386 , H01L25/0655 , H01L25/50 , H01L23/367 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L2224/0612 , H01L2224/131 , H01L2224/13147 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81203 , H01L2224/92125 , H01L2924/15159 , H01L2224/131 , H01L2924/014 , H01L2924/00014
摘要: An electronic assembly that includes a substrate having an upper surface and a bridge that includes an upper surface. The bridge is within a cavity in the upper surface of the substrate. A first electronic component is attached to the upper surface of the bridge and the upper surface of the substrate and a second electronic component is attached to the upper surface of the bridge and the upper surface of the substrate, wherein the bridge electrically connects the first electronic component to the second electronic component.
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公开(公告)号:US20230078395A1
公开(公告)日:2023-03-16
申请号:US17472048
申请日:2021-09-10
申请人: Intel Corporation
发明人: Robin Mcree , Yosuke Kanaoka , Gang Duan , Jinhe Liu , Timothy A. Gosselin
摘要: Disclosed herein are embedded heterogeneous architectures having minimized die shift and methods for manufacturing the same. The architectures may include a substrate, a bridge, and a material attached to the substrate. The substrate may include a first subset of vias and a second subset of vias. The bridge may be located in between the first subset and the second subset of vias. The material may include a first portion located proximate the first subset of vias, and a second portion located proximate the second subset of vias. The first and second portions may define a partial boundary of a cavity formed within the substrate and the bridge may be located within the cavity.
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公开(公告)号:US11075166B2
公开(公告)日:2021-07-27
申请号:US17005002
申请日:2020-08-27
申请人: Intel Corporation
发明人: Eric J. Li , Timothy A. Gosselin , Yoshihiro Tomita , Shawna M. Liff , Amram Eitan , Mark Saltas
IPC分类号: H01L23/538 , H01L21/56 , H01L23/13 , H01L23/48 , H01L23/00 , H01L25/065 , H01L21/48 , H01L23/31
摘要: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.
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公开(公告)号:US20230088170A1
公开(公告)日:2023-03-23
申请号:US17481068
申请日:2021-09-21
申请人: Intel Corporation
发明人: Xavier Francois Brun , Sanka Ganesan , Holly Sawyer , William J. Lambert , Timothy A. Gosselin , Yuting Wang
IPC分类号: H01L23/00
摘要: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL is electrically coupled to the second surface of the first die by solder interconnects, and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by non-solder interconnects.
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公开(公告)号:US20230086691A1
公开(公告)日:2023-03-23
申请号:US17482681
申请日:2021-09-23
申请人: Intel Corporation
IPC分类号: H01L23/538 , H01L21/48
摘要: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a microelectronic subassembly including a first bridge component in a first layer, the first bridge component having a first surface and an opposing second surface, and a die in a second layer, wherein the second layer is on the first layer, and the die is electrically coupled to the second surface of the first bridge component; a package substrate having a second bridge component embedded therein, wherein the second bridge component is electrically coupled to the first surface of the first bridge component; and a microelectronic component on the second surface of the package substrate and electrically coupled to the second bridge component, wherein the microelectronic component is electrically coupled to the die via the first and second bridge components.
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公开(公告)号:US20220375844A1
公开(公告)日:2022-11-24
申请号:US17328034
申请日:2021-05-24
申请人: Intel Corporation
IPC分类号: H01L23/498 , H01L23/14 , H01L23/00 , H01L21/48
摘要: An integrated circuit (IC) package, comprising a die having a first set of interconnects of a first pitch, and an interposer comprising an organic substrate having a second set of interconnects of a second pitch. The interposer also includes an inorganic layer over the organic substrate. The inorganic layer comprises conductive traces electrically coupling the second set of interconnects with the first set of interconnects. The die is attached to the interposer by the first set of interconnects. In some embodiments, the interposer further comprises an embedded die. The IC package further comprises a package support having a third set of interconnects of a third pitch, and a second inorganic layer over a surface of the interposer opposite to the die. The second inorganic layer comprises conductive traces electrically coupling the third set of interconnects with the second set of interconnects.
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公开(公告)号:US10790231B2
公开(公告)日:2020-09-29
申请号:US16510295
申请日:2019-07-12
申请人: Intel Corporation
发明人: Eric J. Li , Timothy A. Gosselin , Yoshihiro Tomita , Shawna M. Liff , Amram Eitan , Mark Saltas
IPC分类号: H01L23/538 , H01L21/56 , H01L23/13 , H01L23/48 , H01L23/00 , H01L25/065 , H01L21/48 , H01L23/31
摘要: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.
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公开(公告)号:US10418329B2
公开(公告)日:2019-09-17
申请号:US15774937
申请日:2015-12-11
申请人: Intel Corporation
发明人: Eric J. Li , Timothy A. Gosselin , Yoshihiro Tomita , Shawna M. Liff , Amram Eitan , Mark Saltas
IPC分类号: H01L23/538 , H01L23/48 , H01L23/13 , H01L21/56 , H01L23/00 , H01L25/065 , H01L21/48 , H01L23/31
摘要: A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.
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