公开(公告)号：US09396883B2

公开(公告)日：2016-07-19

申请号：US13871953

申请日：2013-04-26

Applicant: Intel Corporation

Inventor： Priyanka Pande ,  Cary L. Pint ,  Yang Liu ,  Wei Jin ,  Charles Holzwarth ,  Donald Gardner

IPC: H05K7/02 ,  H01G11/04 ,  H01G11/84 ,  H01G11/22

CPC classification number: H01G11/84 ,  C23F1/02 ,  G03F7/20 ,  G03F7/32 ,  H01G11/04 ,  H01G11/22 ,  H01M12/005 ,  Y02E60/13 ,  Y10T29/417

Abstract: Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例涉及法拉第能量存储装置结构及相关联的技术和配置。 在一个实施例中，一种装置包括一种装置，该装置包括具有设置在基板的表面中的多个孔的基板，多个孔被配置成多排的阵列，以及布置在多个板中的法拉第能量存储器的活性材料 孔以基本上填充多个孔。 可以描述和/或要求保护其他实施例。