公开(公告)号：US20160300668A1

公开(公告)日：2016-10-13

申请号：US15184847

申请日：2016-06-16

Applicant: Intel Corporation

Inventor： Priyanka Pande ,  Cary L. Pint ,  Yang Liu ,  Wei Jin ,  Charles Holzwarth ,  Donald Gardner

IPC: H01G11/84 ,  G03F7/32 ,  G03F7/20 ,  H01M12/00 ,  C23F1/02

CPC classification number: H01G11/84 ,  C23F1/02 ,  G03F7/20 ,  G03F7/32 ,  H01G11/04 ,  H01G11/22 ,  H01M12/005 ,  Y02E60/13 ,  Y10T29/417

Abstract: Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例涉及法拉第能量存储装置结构及相关技术和配置。 在一个实施例中，一种装置包括一种装置，该装置包括具有设置在基板的表面中的多个孔的基板，多个孔被配置成多排的阵列，以及布置在多个板中的法拉第能量存储器的活性材料 孔以基本上填充多个孔。 可以描述和/或要求保护其他实施例。

公开(公告)号：US09396883B2

公开(公告)日：2016-07-19

申请号：US13871953

申请日：2013-04-26

Applicant: Intel Corporation

Inventor： Priyanka Pande ,  Cary L. Pint ,  Yang Liu ,  Wei Jin ,  Charles Holzwarth ,  Donald Gardner

IPC: H05K7/02 ,  H01G11/04 ,  H01G11/84 ,  H01G11/22

CPC classification number: H01G11/84 ,  C23F1/02 ,  G03F7/20 ,  G03F7/32 ,  H01G11/04 ,  H01G11/22 ,  H01M12/005 ,  Y02E60/13 ,  Y10T29/417

Abstract: Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例涉及法拉第能量存储装置结构及相关联的技术和配置。 在一个实施例中，一种装置包括一种装置，该装置包括具有设置在基板的表面中的多个孔的基板，多个孔被配置成多排的阵列，以及布置在多个板中的法拉第能量存储器的活性材料 孔以基本上填充多个孔。 可以描述和/或要求保护其他实施例。

公开(公告)号：US10068718B2

公开(公告)日：2018-09-04

申请号：US15184847

申请日：2016-06-16

Applicant: Intel Corporation

Inventor： Priyanka Pande ,  Cary L. Pint ,  Yang Liu ,  Wei Jin ,  Charles Holzwarth ,  Donald Gardner

IPC: B05D5/12 ,  H01G11/84 ,  H01G11/04 ,  H01G11/22 ,  C23F1/02 ,  G03F7/20 ,  G03F7/32 ,  H01M12/00

Abstract: Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.

公开(公告)号：US09093226B2

公开(公告)日：2015-07-28

申请号：US13621354

申请日：2012-09-17

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Wei Jin ,  Zhaohui Chen ,  Charles W. Holzwarth ,  Cary L. Pint ,  Bum Ki Moon ,  John L. Gustafson

IPC: H01G9/00 ,  H01G11/26 ,  H01G11/04 ,  H01G11/30 ,  H01G11/86 ,  H01L49/02

CPC classification number: H01G11/26 ,  H01G9/0029 ,  H01G11/04 ,  H01G11/30 ,  H01G11/86 ,  H01L28/82 ,  Y02E60/13 ,  Y10T29/417

Abstract: An energy storage device includes a first electrode (110, 510) including a first plurality of channels (111, 512) that contain a first electrolyte (150, 514) and a second electrode (120, 520) including a second plurality of channels (121, 522) that contain a second electrolyte (524). The first electrode has a first surface (115, 511) and the second electrode has a second surface (125, 521). At least one of the first and second electrodes is a porous silicon electrode, and at least one of the first and second surfaces comprises a passivating layer (535).

Abstract translation: 能量存储装置包括包括第一多个通道（111,512）的第一电极（110,510），第一电极包含第一电解质（150,514）和包括第二多个通道的第二电极（120,520） 121,522），其包含第二电解质（524）。 第一电极具有第一表面（115,511），第二电极具有第二表面（125,521）。 第一和第二电极中的至少一个是多孔硅电极，并且第一表面和第二表面中的至少一个包括钝化层（535）。