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1.发明申请FARADAIC ENERGY STORAGE DEVICE STRUCTURES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS 审中-公开法定能源储存装置结构及相关技术和配置公开(公告)号：US20160300668A1
公开(公告)日：2016-10-13
申请号：US15184847
申请日：2016-06-16
Applicant: Intel Corporation
Inventor： Priyanka Pande , Cary L. Pint , Yang Liu , Wei Jin , Charles Holzwarth , Donald Gardner
CPC classification number: H01G11/84 , C23F1/02 , G03F7/20 , G03F7/32 , H01G11/04 , H01G11/22 , H01M12/005 , Y02E60/13 , Y10T29/417
Abstract: Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.
Abstract translation: 本公开的实施例涉及法拉第能量存储装置结构及相关技术和配置。 在一个实施例中，一种装置包括一种装置，该装置包括具有设置在基板的表面中的多个孔的基板，多个孔被配置成多排的阵列，以及布置在多个板中的法拉第能量存储器的活性材料 孔以基本上填充多个孔。 可以描述和/或要求保护其他实施例。
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2.发明申请ENERGY STORAGE DEVICE, METHOD OF MANUFACTURING SAME, AND MOBILE ELECTRONIC DEVICE CONTAINING SAME 审中-公开能量储存装置，其制造方法和含有其的移动电子装置公开(公告)号：US20160358716A1
公开(公告)日：2016-12-08
申请号：US15239285
申请日：2016-08-17
Applicant: Intel Corporation
Inventor： Donald S. Gardner , Cary L. Pint , Scott B. Clendenning
CPC classification number: H01G11/02 , G06F1/1635 , H01G9/04 , H01G11/26 , H01G11/30 , H01G11/46 , H01G11/52 , H01G11/54 , H01G11/84 , H04M1/0262 , H04M2001/0204 , Y02E60/13 , Y10T29/49115
Abstract: An energy storage device comprises a first porous semiconducting structure (510) comprising a first plurality of channels (511) that contain a first electrolyte (514) and a second porous semiconducting structure (520) comprising a second plurality of channels (521) that contain a second electrolyte (524). In one embodiment, the energy storage device further comprises a film (535) on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions. In another embodiment, at least one of the first and second electrolytes contains a plurality of metal ions. In another embodiment, the first and second electrolytes, taken together, comprise a redox system.
Abstract translation: 能量存储装置包括第一多孔半导体结构（510），第一多孔半导体结构（510）包括含有第一电解质（514）的第一多个通道（511）和包含第二多个通道（521）的第二多孔半导体结构（520） 第二电解质（524）。 在一个实施例中，能量存储装置还包括在第一和第二多孔半导体结构中的至少一个上的膜（535），该膜包括能够显示可逆电子转移反应的材料。 在另一个实施方案中，第一和第二电解质中的至少一个包含多个金属离子。 在另一个实施方案中，第一和第二电解质一起组成氧化还原体系。
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3.发明授权Faradaic energy storage device structures and associated techniques and configurations 有权法拉第能量储存装置结构及相关技术和配置公开(公告)号：US09396883B2
公开(公告)日：2016-07-19
申请号：US13871953
申请日：2013-04-26
Applicant: Intel Corporation
Inventor： Priyanka Pande , Cary L. Pint , Yang Liu , Wei Jin , Charles Holzwarth , Donald Gardner
CPC classification number: H01G11/84 , C23F1/02 , G03F7/20 , G03F7/32 , H01G11/04 , H01G11/22 , H01M12/005 , Y02E60/13 , Y10T29/417
Abstract: Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.
Abstract translation: 本公开的实施例涉及法拉第能量存储装置结构及相关联的技术和配置。 在一个实施例中，一种装置包括一种装置，该装置包括具有设置在基板的表面中的多个孔的基板，多个孔被配置成多排的阵列，以及布置在多个板中的法拉第能量存储器的活性材料 孔以基本上填充多个孔。 可以描述和/或要求保护其他实施例。
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4.发明授权公开(公告)号：US09355790B2
公开(公告)日：2016-05-31
申请号：US13929724
申请日：2013-06-27
Applicant: Intel Corporation
Inventor： Charles W. Holzwarth , Cary L. Pint , Michael C. Graf , Bum Ki Moon
CPC classification number: H01G11/86 , B82Y30/00 , H01G11/12 , H01G11/24 , H01G11/26 , H01G11/28 , H01G11/30 , H01G11/32 , Y02E60/13 , Y10S977/948
Abstract: Ultracapacitor electrodes having an enhanced electrolyte-accessible surface area are provided. Such electrodes can include a porous substrate having a solution side and a collector side, the collector side operable to couple to a current collector and the solution side positioned to interact with an electrolytic solution when in use. The electrode can also include a conductive coating formed on the solution side of the porous substrate. The coating can have a first side positioned to interact with an electrolytic solution when in use and a second side opposite the first side. The coating can have discontinuous regions that allow access of an electrolyte solution to the second side during use to enhance electrolyte-accessible surface area of the conductive coating.
Abstract translation: 提供具有增强的电解质可达表面积的超级电容器电极。 这样的电极可以包括具有溶液侧和集电极侧的多孔基材，集电体侧可操作以耦合到集电器，并且在使用时定位成与电解溶液相互作用的溶液侧。 电极还可以包括在多孔基底的溶液侧上形成的导电涂层。 涂层可以具有第一侧，其被定位成在使用时与电解溶液相互作用，并且第二面与第一侧相对。 涂层可以具有不连续区域，其允许在使用期间使电解质溶液进入第二面以增强导电涂层的电解质可接近的表面积。
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公开(公告)号：US10068718B2
公开(公告)日：2018-09-04
申请号：US15184847
申请日：2016-06-16
Applicant: Intel Corporation
Inventor： Priyanka Pande , Cary L. Pint , Yang Liu , Wei Jin , Charles Holzwarth , Donald Gardner
Abstract: Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.
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Patent Agency Ranking
公开(公告)号：US09928966B2
公开(公告)日：2018-03-27
申请号：US13730324
申请日：2012-12-28
Applicant: Intel Corporation
Inventor： Zhaohui Chen , Donald S. Gardner , Bum Ki Moon , Charles W. Holzwarth , Cary L. Pint , Scott B. Clendenning
CPC classification number: H01G11/24 , G11C13/0002 , G11C13/0016 , H01L28/82 , Y02E60/13 , Y10T29/435
Abstract: In one embodiment, a structure for an energy storage device may include a first nanostructured substrate having a conductive layer and a dielectric layer formed on the conductive layer. A second nanostructured substrate includes another conductive layer. A separator separates the first and second nanostructured substrates and allows ions of an electrolyte to pass through the separator. The structure may be a nanostructured electrolytic capacitor with the first nanostructured substrate forming a positive electrode and the second nanostructured substrate forming a negative electrode of the capacitor.
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7.发明授权Energy storage device, method of manufacturing same, and mobile electronic device containing same 有权储能装置及其制造方法以及含有其的移动式电子装置公开(公告)号：US09093226B2
公开(公告)日：2015-07-28
申请号：US13621354
申请日：2012-09-17
Applicant: Intel Corporation
Inventor： Donald S. Gardner , Wei Jin , Zhaohui Chen , Charles W. Holzwarth , Cary L. Pint , Bum Ki Moon , John L. Gustafson
CPC classification number: H01G11/26 , H01G9/0029 , H01G11/04 , H01G11/30 , H01G11/86 , H01L28/82 , Y02E60/13 , Y10T29/417
Abstract: An energy storage device includes a first electrode (110, 510) including a first plurality of channels (111, 512) that contain a first electrolyte (150, 514) and a second electrode (120, 520) including a second plurality of channels (121, 522) that contain a second electrolyte (524). The first electrode has a first surface (115, 511) and the second electrode has a second surface (125, 521). At least one of the first and second electrodes is a porous silicon electrode, and at least one of the first and second surfaces comprises a passivating layer (535).
Abstract translation: 能量存储装置包括包括第一多个通道（111,512）的第一电极（110,510），第一电极包含第一电解质（150,514）和包括第二多个通道的第二电极（120,520） 121,522），其包含第二电解质（524）。 第一电极具有第一表面（115,511），第二电极具有第二表面（125,521）。 第一和第二电极中的至少一个是多孔硅电极，并且第一表面和第二表面中的至少一个包括钝化层（535）。
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8.发明授权公开(公告)号：US09793061B2
公开(公告)日：2017-10-17
申请号：US15239285
申请日：2016-08-17
Applicant: Intel Corporation
Inventor： Donald S. Gardner , Cary L. Pint , Scott B. Clendenning
IPC: H01G11/02 , H01G9/04 , H01G11/26 , H01G11/30 , G06F1/16 , H01G11/52 , H01G11/84 , H04M1/02 , H01G11/54 , H01G11/46
CPC classification number: H01G11/02 , G06F1/1635 , H01G9/04 , H01G11/26 , H01G11/30 , H01G11/46 , H01G11/52 , H01G11/54 , H01G11/84 , H04M1/0262 , H04M2001/0204 , Y02E60/13 , Y10T29/49115
Abstract: An energy storage device comprises a first porous semiconducting structure (510) comprising a first plurality of channels (511) that contain a first electrolyte (514) and a second porous semiconducting structure (520) comprising a second plurality of channels (521) that contain a second electrolyte (524). In one embodiment, the energy storage device further comprises a film (535) on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions. In another embodiment, at least one of the first and second electrolytes contains a plurality of metal ions. In another embodiment, the first and second electrolytes, taken together, comprise a redox system.
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公开(公告)号：US09685278B2
公开(公告)日：2017-06-20
申请号：US15150226
申请日：2016-05-09
Applicant: Intel Corporation
Inventor： Charles W. Holzwarth , Cary L. Pint , Michael C. Graf , Bum Ki Moon
CPC classification number: H01G11/86 , B82Y30/00 , H01G11/12 , H01G11/24 , H01G11/26 , H01G11/28 , H01G11/30 , H01G11/32 , Y02E60/13 , Y10S977/948
Abstract: Ultracapacitor electrodes having an enhanced electrolyte-accessible surface area are provided. Such electrodes can include a porous substrate having a solution side and a collector side, the collector side operable to couple to a current collector and the solution side positioned to interact with an electrolytic solution when in use. The electrode can also include a conductive coating formed on the solution side of the porous substrate. The coating can have a first side positioned to interact with an electrolytic solution when in use and a second side opposite the first side. The coating can have discontinuous regions that allow access of an electrolyte solution to the second side during use to enhance electrolyte-accessible surface area of the conductive coating.
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公开(公告)号：US20160254105A1
公开(公告)日：2016-09-01
申请号：US15150226
申请日：2016-05-09
Applicant: Intel Corporation
Inventor： Charles W. Holzwarth , Cary L. Pint , Michael C. Graf , Bum Ki Moon
CPC classification number: H01G11/86 , B82Y30/00 , H01G11/12 , H01G11/24 , H01G11/26 , H01G11/28 , H01G11/30 , H01G11/32 , Y02E60/13 , Y10S977/948
Abstract: Ultracapacitor electrodes having an enhanced electrolyte-accessible surface area are provided. Such electrodes can include a porous substrate having a solution side and a collector side, the collector side operable to couple to a current collector and the solution side positioned to interact with an electrolytic solution when in use. The electrode can also include a conductive coating formed on the solution side of the porous substrate. The coating can have a first side positioned to interact with an electrolytic solution when in use and a second side opposite the first side. The coating can have discontinuous regions that allow access of an electrolyte solution to the second side during use to enhance electrolyte-accessible surface area of the conductive coating.
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