公开(公告)号：US07825380B2

公开(公告)日：2010-11-02

申请号：US12389239

申请日：2009-02-19

Applicant: Irina Puscasu ,  Martin U. Pralle ,  James T. Daly ,  Mark P. McNeal ,  Edward A. Johnson

Inventor： Irina Puscasu ,  Martin U. Pralle ,  James T. Daly ,  Mark P. McNeal ,  Edward A. Johnson

IPC: G01J1/00

CPC classification number: G01N21/255 ,  B82Y20/00 ,  B82Y30/00 ,  G01J1/42 ,  G01J3/108 ,  G01J5/20 ,  G01N21/3504 ,  H01L31/101

Abstract: An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow hand of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects.

Abstract translation: 使用光子晶体（PC）结构来产生具有窄波长的手的电磁发射的红外发射器包括半导体材料层，覆盖半导体材料层的介电材料层和具有内侧覆盖层的金属材料层 介电材料层。 半导体材料层能够耦合到能量源以将能量引入到半导体材料层。 表面特征的阵列以周期性或准周期性方式在器件中定义。 发射器件适于发射具有通过周期性分布的表面特征的参数确定的光谱特性的电磁能，参数包括形状，尺寸，深度，分布几何形状，周期性，材料性质和缺陷。

公开(公告)号：US07280749B2

公开(公告)日：2007-10-09

申请号：US10074188

申请日：2002-02-12

Applicant: Peter G. Loges ,  James T. Daly ,  V. Mark Villafuerte ,  Christopher J. von Benken

Inventor： Peter G. Loges ,  James T. Daly ,  V. Mark Villafuerte ,  Christopher J. von Benken

IPC: A45D20/40 ,  H05B3/08

CPC classification number: H05B3/009 ,  H05B2203/032

Abstract: A radiation source including a base, a curved reflector attached to the base, pins passing through the base and within the reflector, and a filament of high emissivity material helically wound about the pins and having opposing ends electrically connected to the pins so that upon passage of electrical energy through the filament, the filament becomes electrically heated and emits infrared radiation.

Abstract translation: 一种辐射源，包括基座，连接到基座的弯曲反射器，穿过基座并在反射器内的引脚，以及螺旋缠绕在销上的高辐射材料的细丝，并且具有电连接到引脚的相对端，使得在通过时 的电能通过灯丝，灯丝变得电加热并发射红外辐射。

公开(公告)号：US5231298A

公开(公告)日：1993-07-27

申请号：US833908

申请日：1992-02-11

Applicant: James T. Daly

Inventor： James T. Daly

IPC: H01L21/205 ,  H01L21/331

CPC classification number: H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579

Abstract: A device made by a process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the base layer thereof in a manner that includes the balancing of the strain of the crystal lattice structure caused by the carbon doping by co-doping the base layer with an isovalent and isoelectric dopant. The co-doping also improves device performance. It also effects alloy hardening, which inhibits further defect formation, improves mobility and carrier lifetime of the base layer and, by narrowing the energy gap, it improves ohmic contact formation.

Abstract translation: 通过制造用于高性能器件的至少一种这样的器件制造无应变，重碳掺杂的p型外延层的方法制造的器件。 该方法基本上包括在GaAs HBT器件中外延沉积无应变的碳掺杂p型层以形成其基底层，其方式包括由碳引起的晶格结构的应变的平衡 通过用等价和等电掺杂剂掺杂基底层来进行掺杂。 共掺杂也提高了器件性能。 它还影响合金硬化，这抑制了进一步的缺陷形成，改善了基层的迁移率和载流子寿命，并且通过缩小能隙，它改善了欧姆接触形成。