DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20200168851A1

    公开(公告)日:2020-05-28

    申请号:US16778072

    申请日:2020-01-31

    Inventor: Nobuto MANAGAKI

    Abstract: A display device includes an organic insulating layer, a first inorganic insulating layer, and a second inorganic insulating layer arranged in a first region and a second region, a plurality of pixels arranged in the first region, a protective film arranged in the second region and in contact with an upper surface of the second inorganic insulating layer in the second region, and a groove portion is provided in the organic insulating layer in the second region. A side surface and a bottom surface of the groove portion is covered by the first inorganic insulating layer and the second inorganic insulating layer. The protective film is overlapped with an upper surface of the organic insulating layer and an upper end portion and a part of the side surface of the groove portion.

    LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE
    12.
    发明申请

    公开(公告)号:US20190165058A1

    公开(公告)日:2019-05-30

    申请号:US16180116

    申请日:2018-11-05

    Inventor: Nobuto MANAGAKI

    Abstract: Provided is a light-emitting element including a first electrode, a partition wall covering an edge portion of the first electrode, a light-confining layer in contact with a side surface of the partition wall and the first electrode, an electroluminescence layer over the first electrode and in contact with the first electrode and the light-confining layer, and a second electrode over the electroluminescence layer. A refractive index of the light-confining layer is lower than a refractive index of the electroluminescence layer.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240215294A1

    公开(公告)日:2024-06-27

    申请号:US18391684

    申请日:2023-12-21

    CPC classification number: H10K50/181 H10K59/35 H10K71/10 H10K2101/40

    Abstract: According to one embodiment, a display device includes an anode, a cathode opposing the anode and an organic layer located between the anode and the cathode, and the organic layer includes a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer, and at least one of the electron blocking layer and the hole blocking layer has a resistance of 10% or more and 30% or less in a thickness direction when a total resistance between the anode and the cathode is set to 100%.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240215278A1

    公开(公告)日:2024-06-27

    申请号:US18389834

    申请日:2023-12-20

    Inventor: Nobuto MANAGAKI

    CPC classification number: H10K50/11 H10K59/1201 H10K2101/40

    Abstract: According to one embodiment, a display device has such configuration that each of ΔE1_LUMO and ΔE1_HOMO is 0.35 eV or less (ΔE1≤0.35 eV), each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or more and 0.5 eV or less (0.1 eV≤ΔE2≤0.5 eV), the light emitting layer includes a first material and a second material, a band gap of the first material is larger than a band gap of the second material, and a ratio of the first material to the second material is 5% or more and less than 40%.

    DISPLAY DEVICE
    16.
    发明申请

    公开(公告)号:US20220254859A1

    公开(公告)日:2022-08-11

    申请号:US17729049

    申请日:2022-04-26

    Inventor: Nobuto MANAGAKI

    Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210313525A1

    公开(公告)日:2021-10-07

    申请号:US17205414

    申请日:2021-03-18

    Inventor: Nobuto MANAGAKI

    Abstract: A semiconductor device includes: a resin substrate; a display element configured to generate an image; and a circuit layer including a thin film transistor configured to control the display element. The resin substrate has a main body made of resin and a surface layer made of the resin laminated on the main body. The surface layer has a lower electrification property than the main body or the surface layer has a lower film density than the main body. Each of the display element and the circuit layer is on the surface layer.

    DISPLAY DEVICE
    18.
    发明申请

    公开(公告)号:US20210074794A1

    公开(公告)日:2021-03-11

    申请号:US16952272

    申请日:2020-11-19

    Inventor: Nobuto MANAGAKI

    Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

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