公开(公告)号：US20080122017A1

公开(公告)日：2008-05-29

申请号：US11980528

申请日：2007-10-31

Applicant: Jin Ha Park

Inventor： Jin Ha Park

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7833 ,  H01L21/2254 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/3145 ,  H01L29/665 ,  H01L29/6659

Abstract: A semiconductor device, such as a positive channel metal-oxide semiconductor (PMOS) transistor, and a fabricating method thereof are provided. The semiconductor device includes: a gate insulation layer and a gate electrode, a semiconductor substrate, a spacer formed on side walls of the gate insulation layer and the gate electrode, a lightly doped drain (LDD) area formed on the semiconductor substrate at both sides of the gate electrode, a source/drain area formed on the semiconductor substrate at both sides of the gate electrode, and an oxide-nitride layer formed on the gate electrode and on the source/drain area.

Abstract translation: 提供了诸如正沟道金属氧化物半导体（PMOS）晶体管的半导体器件及其制造方法。 半导体器件包括：栅极绝缘层和栅电极，半导体衬底，形成在栅极绝缘层和栅电极的侧壁上的间隔物，在两侧的半导体衬底上形成的轻掺杂漏极（LDD）区域 栅极电极的两侧形成在半导体基板上的源极/漏极区域以及形成在栅极电极和源极/漏极区域上的氧化物 - 氮化物层。

公开(公告)号：US07365347B2

公开(公告)日：2008-04-29

申请号：US11166679

申请日：2005-06-23

Applicant: Jin Ha Park

Inventor： Jin Ha Park

IPC: G01K1/08 ,  H01J3/14 ,  H01J3/26

CPC classification number: H01J37/3023 ,  H01J2237/30411 ,  H01J2237/31701

Abstract: Disclosed herein is an ion implantation apparatus for use in manufacturing of a semiconductor device, which has a software program including an option for selecting a manipulator, enabling a time for beam tuning to be minimized. The ion implantation apparatus further includes a manipulator for extracting and focusing an ion source and an ion beam, a control block for controlling overall operation of the ion implantation apparatus and recognizing a newly installed manipulator, and a control window on which a selection menu is displayed, allowing recipe data to be selected on a screen. When installing a replacement manipulator, recipe data for the replacement manipulator can be selected to improve beam tuning set up time.

Abstract translation: 本文公开了一种用于制造半导体器件的离子注入装置，其具有包括用于选择操纵器的选项的软件程序，使得能够使波束调谐的时间最小化。 离子注入装置还包括用于提取和聚焦离子源和离子束的操纵器，用于控制离子注入装置的总体操作并识别新安装的操纵器的控制块以及显示选择菜单的控制窗口 ，允许在屏幕上选择食谱数据。 当安装更换机械手时，可以选择更换机械手的配方数据，以改善梁的调整设置时间。