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公开(公告)号：US20100019295A1
公开(公告)日：2010-01-28
申请号：US12498874
申请日：2009-07-07
IPC分类号： H01L29/866 , H01L27/14 , H01L27/06
CPC分类号： H01L31/107
摘要： A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.
摘要翻译： CMOS单光子雪崩二极管（SPAD）设计使用常规的或至少已知的CMOS工艺来产生具有击穿区域的器件，其中主pn结由深n阱层形成，并且可选地在另一侧 ，p添加层。 SPAD还可以具有保护环区域，其包括没有任何植入物的p-epi层。 SPAD可以具有弯曲或圆形周长。 CMOS芯片包括如上所述的SPAD和其他所有共享相同深n阱的NMOS器件。
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公开(公告)号：US08552482B2
公开(公告)日：2013-10-08
申请号：US13454811
申请日：2012-04-24
IPC分类号： H01L31/113
CPC分类号： H01L31/107
摘要： A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.
摘要翻译： CMOS单光子雪崩二极管（SPAD）设计使用常规的或至少已知的CMOS工艺来产生具有击穿区域的器件，其中主pn结由深n阱层形成，并且可选地在另一侧 ，p添加层。 SPAD还可以具有保护环区域，其包括没有任何植入物的p-epi层。 SPAD可以具有弯曲或圆形周长。 CMOS芯片包括如上所述的SPAD和其他所有共享相同深n阱的NMOS器件。
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公开(公告)号：US20120205731A1
公开(公告)日：2012-08-16
申请号：US13454811
申请日：2012-04-24
IPC分类号： H01L27/14
CPC分类号： H01L31/107
摘要： A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.
摘要翻译： CMOS单光子雪崩二极管（SPAD）设计使用常规的或至少已知的CMOS工艺来产生具有击穿区域的器件，其中主pn结由深n阱层形成，并且可选地在另一侧 ，p添加层。 SPAD还可以具有保护环区域，其包括没有任何植入物的p-epi层。 SPAD可以具有弯曲或圆形周长。 CMOS芯片包括如上所述的SPAD和其他所有共享相同深n阱的NMOS器件。
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公开(公告)号：US08120700B2
公开(公告)日：2012-02-21
申请号：US11972938
申请日：2008-01-11
申请人： Justin Richardson
发明人： Justin Richardson
CPC分类号： H04N5/232 , H04N5/23241
摘要： An image sensor may have a power supply voltage regulator controlled by a feedback loop. The feedback signal may be derived by applying the supply voltage at a point distant from the voltage regulator to an analog-to-digital converter (ADC) which may be a spare channel of an ADC provided for the output of the pixel array. The digital feedback loop may be controlled via a chip I2C bus.
摘要翻译： 图像传感器可以具有由反馈回路控制的电源稳压器。 反馈信号可以通过将电压在远离电压调节器的点施加到模数转换器（ADC）来获得，模数转换器（ADC）可以是为像素阵列的输出提供的ADC的备用通道。 数字反馈回路可以通过芯片I2C总线进行控制。
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公开(公告)号：US08822900B2
公开(公告)日：2014-09-02
申请号：US13368473
申请日：2012-02-08
摘要： A photodetector includes a photodiode and output circuitry coupled to the photodiode. The photodetector is configurable for operation in at least two modes. A first configurable mode operates the photodetector as an integrating sensor. In this first mode, a bias voltage across the photodiode is set below the breakdown voltage of the photodiode and the output circuitry is configured to read an analog integration output voltage from the photodiode. A second configurable mode operates the photodetector as a single photon avalanche detector. In this second mode, the bias voltage across the photodiode is set above the breakdown voltage of the photodiode and the output circuitry is configured to read an avalanche output voltage.
摘要翻译： 光电检测器包括耦合到光电二极管的光电二极管和输出电路。 光电检测器可配置为在至少两种模式下操作。 第一可配置模式将光电检测器作为积分传感器进行操作。 在该第一模式中，将光电二极管两端的偏置电压设置为低于光电二极管的击穿电压，并且输出电路被配置为从光电二极管读取模拟积分输出电压。 第二可配置模式将光电检测器操作为单个光子雪崩检测器。 在该第二模式中，将光电二极管两端的偏置电压设置在光电二极管的击穿电压之上，并且输出电路被配置为读取雪崩输出电压。
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公开(公告)号：US08462236B2
公开(公告)日：2013-06-11
申请号：US11622507
申请日：2007-01-12
申请人： Justin Richardson
发明人： Justin Richardson
摘要： An image sensor may include a shared memory resource, which can be selectively used by a digital filter for image scaling or by a defect correction circuit.
摘要翻译： 图像传感器可以包括共享存储器资源，其可以被用于图像缩放的数字滤波器或缺陷校正电路选择性地使用。
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17.发明申请公开(公告)号：US20070126922A1
公开(公告)日：2007-06-07
申请号：US11559113
申请日：2006-11-13
申请人： Justin Richardson
发明人： Justin Richardson
IPC分类号： H04N5/235
CPC分类号： H04N5/35554 , G06K7/10722 , G06K7/10752 , H04N5/3532
摘要： In a solid state image sensor having a pixel array, a first frame is imaged using varying exposure times in a series of zones. The exposure time for a subsequent frame is selected from the results of the first frame, The exposure times are controlled in a rolling blade manner by controlling the number of lines between reset and readout. The sensor is particularly suited to use in bar code readers.
摘要翻译： 在具有像素阵列的固态图像传感器中，在一系列区域中使用变化的曝光时间对第一帧进行成像。 从第一帧的结果中选择后续帧的曝光时间。通过控制复位和读出之间的行数，以滚动刀片的方式控制曝光时间。 传感器特别适用于条码阅读器。
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