公开(公告)号：US20220199580A1

公开(公告)日：2022-06-23

申请号：US17412554

申请日：2021-08-26

Applicant: Kioxia Corporation

Inventor： Soichi HOMMA ,  Daisuke SAKAGUCHI

IPC: H01L25/065 ,  H01L25/10 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor device according to the present embodiment includes a plurality of stacked first semiconductor chips. First columnar electrodes are connected to electrode pads of the first semiconductor chips and extend in a stacking direction of the first semiconductor chips. A plurality of second semiconductor chips are stacked above the first semiconductor chips. Second columnar electrodes are connected to electrode pads of the second semiconductor chips and extend in a stacking direction of the second semiconductor chips. Third columnar electrodes are respectively connected to tops of the first columnar electrodes and extend in the stacking direction of the second semiconductor chips. A resin layer covers the first semiconductor chips, the second semiconductor chips, the second columnar electrodes, and the third columnar electrodes and exposes tops of the second and third columnar electrodes.

公开(公告)号：US20220020722A1

公开(公告)日：2022-01-20

申请号：US17189228

申请日：2021-03-01

Applicant: KIOXIA CORPORATION

Inventor： Soichi HOMMA

IPC: H01L23/00 ,  H01L25/065

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a metal bump on a first surface side of a semiconductor chip, positioning the semiconductor chip so the metal bump contacts a pad of an interconnection substrate, and applying a first light from a second surface side of the semiconductor chip and melting the metal bump with the first light. After the melting, the melted metal bump is allowed to resolidify by stopping or reducing the application of the first light. The semiconductor chip is then pressed toward the interconnection substrate. A second light is then applied from the second surface side of the semiconductor chip while the semiconductor chip is being pressed toward the interconnection substrate to melt the metal bump. After the melting, the melted metal bump is allowed to resolidify by the stopping or reducing of the application of the second light.

公开(公告)号：US20220013477A1

公开(公告)日：2022-01-13

申请号：US17189718

申请日：2021-03-02

Applicant: Kioxia Corporation

Inventor： Soichi HOMMA ,  Tatsuo MIGITA ,  Masayuki MIURA ,  Takeori MAEDA ,  Kazuhiro KATO ,  Susumu YAMAMOTO

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00

Abstract: A semiconductor device includes a semiconductor chip having a first face and a second face on an opposite side to the first face, and including semiconductor elements arranged on the first face. Columnar electrodes are arranged above the first face, and electrically connected to any of the semiconductor elements. A first member is located around the columnar electrodes above the first face. An insulant covers the columnar electrodes and the first member. The first member is harder than the columnar electrodes and the insulant. The first member and the columnar electrodes are exposed from a surface of the insulant.