公开(公告)号：US11257536B2

公开(公告)日：2022-02-22

申请号：US17002512

申请日：2020-08-25

Applicant: KIOXIA CORPORATION

Inventor： Takayuki Miyazaki

IPC: G11C16/04 ,  G11C11/4074 ,  G11C11/4076 ,  G11C5/02 ,  G11C11/4094 ,  G11C5/06 ,  G11C11/408

Abstract: A semiconductor storage device includes a first wiring, a second wiring, a memory cell including a first element configured to store data and a second element connected to the first element, the memory cell having a first end connected to the first wiring and a second end connected to the second wiring, and a control circuit configured to apply a voltage that increase with a first slope and then with a second slope that is smaller than the first slope, to the memory cell using the first wiring and the second wiring.