专利检索 ap:("Katsu Honzawa" OR "Kazuhiro Atsumi" OR "Humihiko Shimomura" OR "Seiji Kawaguchi" OR "Yuichiro Sakamoto" OR "Hisaya Motojima" OR "Masayuki Masuko" OR "Tsuyoshi Hayakawa") AND inv:"Yuichiro Sakamoto" 第 2 页

11.

发明授权
Plasma etching method, plasma processing apparatus, control program and computer readable storage medium 有权
标题翻译：等离子体蚀刻方法，等离子体处理装置，控制程序和计算机可读存储介质

公开(公告)号：US07794617B2

公开(公告)日：2010-09-14

申请号：US11689629

申请日：2007-03-22

申请人： Akihiro Kikuchi , Takashi Tsunoda , Yuichiro Sakamoto

发明人： Akihiro Kikuchi , Takashi Tsunoda , Yuichiro Sakamoto

IPC分类号： C03C15/00

CPC分类号： H01L21/31116 , H01J2237/2001 , H01L21/3065 , H01L21/3081 , H01L21/31144 , H01L21/32137 , H01L21/32139

摘要： A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.

摘要翻译： 等离子体蚀刻方法包括以下步骤：通过使用由含有碳氟化合物气体，氢氟烃气体，稀有气体和O 2气体的处理气体产生的等离子体来蚀刻目标物体的硅层，并且通过使用图案化的抗蚀剂膜作为一个面具目标物体包括主要成分为硅的硅层和形成在硅层上的图案化的抗蚀剂膜。