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1.发明授权Plasma etching method, plasma processing apparatus, control program and computer readable storage medium 有权等离子体蚀刻方法，等离子体处理装置，控制程序和计算机可读存储介质公开(公告)号：US07794617B2
公开(公告)日：2010-09-14
申请号：US11689629
申请日：2007-03-22
IPC分类号： C03C15/00
CPC分类号： H01L21/31116 , H01J2237/2001 , H01L21/3065 , H01L21/3081 , H01L21/31144 , H01L21/32137 , H01L21/32139
摘要： A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.
摘要翻译： 等离子体蚀刻方法包括以下步骤：通过使用由含有碳氟化合物气体，氢氟烃气体，稀有气体和O 2气体的处理气体产生的等离子体来蚀刻目标物体的硅层，并且通过使用图案化的抗蚀剂膜作为 一个面具 目标物体包括主要成分为硅的硅层和形成在硅层上的图案化的抗蚀剂膜。
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2.发明申请PLASMA ETCHING METHOD, PLASMA PROCESSING APPARATUS, CONTROL PROGRAM AND COMPUTER READABLE STORAGE MEDIUM 有权等离子体蚀刻方法，等离子体处理装置，控制程序和计算机可读存储介质公开(公告)号：US20070287297A1
公开(公告)日：2007-12-13
申请号：US11689629
申请日：2007-03-22
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/31116 , H01J2237/2001 , H01L21/3065 , H01L21/3081 , H01L21/31144 , H01L21/32137 , H01L21/32139
摘要： A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.
摘要翻译： 等离子体蚀刻方法包括以下步骤：通过使用从含有碳氟化合物气体，氢氟烃气体，稀有气体和O 2 O 2气体的处理气体产生的等离子体来蚀刻目标物体的硅层 并且通过使用图案化的抗蚀剂膜作为掩模。 目标物体包括主要成分为硅的硅层和形成在硅层上的图案化的抗蚀剂膜。
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3.发明申请Etching method, program, computer readable storage medium and plasma processing apparatus 失效蚀刻方法，程序，计算机可读存储介质和等离子体处理装置公开(公告)号：US20060154472A1
公开(公告)日：2006-07-13
申请号：US11330336
申请日：2006-01-12
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/31116 , H01L21/76802
摘要： A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.
摘要翻译： 通过使用氮气作为蚀刻气体的一部分，可以减少涂覆的硅基绝缘膜与任何其它种类的硅基绝缘膜之间的蚀刻速率的差异。 因此，下面的膜可能不会长期暴露于蚀刻气体，从而可以防止下面的膜的劣化或劣化。
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4.发明授权Etching method, program, computer readable storage medium and plasma processing apparatus 失效蚀刻方法，程序，计算机可读存储介质和等离子体处理装置公开(公告)号：US07655570B2
公开(公告)日：2010-02-02
申请号：US11330336
申请日：2006-01-12
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/76802
摘要： A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.
摘要翻译： 通过使用氮气作为蚀刻气体的一部分，可以减少涂覆的硅基绝缘膜与任何其它种类的硅基绝缘膜之间的蚀刻速率的差异。 因此，下面的膜可能不会长期暴露于蚀刻气体，从而可以防止下面的膜的劣化或劣化。
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公开(公告)号：US08056503B2
公开(公告)日：2011-11-15
申请号：US10483251
申请日：2002-07-02
申请人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。
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公开(公告)号：US08387562B2
公开(公告)日：2013-03-05
申请号：US13242851
申请日：2011-09-23
申请人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。
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公开(公告)号：US08335287B2
公开(公告)日：2012-12-18
申请号：US12623557
申请日：2009-11-23
申请人： Shinichi Fukuda , Akihiro Kikuchi
发明人： Shinichi Fukuda , Akihiro Kikuchi
IPC分类号： H04B1/10
CPC分类号： H04L25/03038 , H04L27/02 , H04L2025/03388 , H04L2025/03566
摘要： A communication apparatus includes a signal detector that detects incoming (i.e., receives) information from a signal received wirelessly. The signal detector includes a wave detector, an equalizer, and a detector. The wave detector accepts an incoming signal wherein information is modulated onto a carrier signal, analyzes the envelope variation of the incoming signal, and generates a detection signal containing the incoming information. The equalizer corrects the detection signal and outputs a corrected detection signal. The detector then detects the incoming information from the corrected detection signal.
摘要翻译： 通信装置包括信号检测器，该信号检测器从无线接收的信号中检测信息（即，接收）信息。 信号检测器包括一个波检测器，一个均衡器和一个检测器。 波检测器接收输入信号，其中信息被调制到载波信号上，分析输入信号的包络变化，并产生包含传入信息的检测信号。 均衡器校正检测信号并输出校正的检测信号。 然后，检测器从校正的检测信号中检测输入信息。
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公开(公告)号：US08264618B2
公开(公告)日：2012-09-11
申请号：US12329824
申请日：2008-12-08
CPC分类号： H04N5/4403 , H01L2924/0002 , H04N21/42207 , H04N21/42222 , H04N2005/4407 , H04N2005/4428 , H01L2924/00
摘要： A remote control apparatus for remotely operating an electronic device. The remote control apparatus including: an operation section having a plurality of operation keys; and a reader/writer configured to read and/or write information from or to an information storage medium, wherein in said operation section, at least one of the plurality of operation keys is arranged so as to overlap a read/write portion of said reader/writer, the read/write portion being used for the reading and/or writing of the information from or to the information storage medium.
摘要翻译： 一种用于远程操作电子设备的遥控装置。 遥控装置包括：具有多个操作键的操作部; 以及读取器/写入器，被配置为从信息存储介质读取和/或写入信息，其中在所述操作部分中，所述多个操作键中的至少一个被布置为与所述读取器的读取/写入部分重叠 /写入器，读/写部分用于从信息存储介质读取和/或写入信息。
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公开(公告)号：US20090147150A1
公开(公告)日：2009-06-11
申请号：US12328875
申请日：2008-12-05
IPC分类号： H04N5/44
CPC分类号： G08C17/02 , G08C2201/21 , G08C2201/42
摘要： Disclosed herein is a remote control apparatus for performing wireless communication with an electronic device, the remote control apparatus including: a reader/writer configured to read and/or write information from or to an information storage medium; and a transmission/reception section configured to transmit and receiving a signal to or from the electronic device via the wireless communication, wherein the transmission/reception section uses the same wireless communication system for both transmission of an operation instruction to the electronic device and transmission of information read from the information storage medium and reception from the electronic device of information to be written to the information storage medium.
摘要翻译： 这里公开了一种用于与电子设备进行无线通信的遥控设备，该遥控设备包括：读取器/写入器，被配置为从信息存储介质读取和/或写入信息; 以及发送/接收部分，被配置为经由无线通信向电子设备发送信号和从电子设备接收信号，其中发送/接收部分使用相同的无线通信系统来传送对电子设备的操作指令和传输 从信息存储介质读取的信息和从电子设备接收要被写入信息存储介质的信息的信息。
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10.发明申请Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program 失效等离子体蚀刻方法和装置，控制程序和存储控制程序的计算机可读存储介质公开(公告)号：US20060289385A1
公开(公告)日：2006-12-28
申请号：US11472379
申请日：2006-06-22
申请人： Akihiro Kikuchi
发明人： Akihiro Kikuchi
IPC分类号： C23F1/00 , B44C1/22 , H01L21/306
CPC分类号： H01L21/31116 , H01J37/32568 , H01J37/32935 , H01L21/31144
摘要： A plasma etching method and apparatus, a control program and a computer-readable storage medium storing the control program are provided. The method is provided for performing a plasma etching on a silicon oxide film through an amorphous carbon mask, wherein the plasma etching is performed by using an etching gas containing a fluorocarbon gas, an oxygen gas, a helium gas and at least one of an argon gas, a krypton gas and a xenon gas.
摘要翻译： 提供了一种等离子体蚀刻方法和装置，控制程序和存储该控制程序的计算机可读存储介质。 该方法用于通过无定形碳掩模对氧化硅膜进行等离子体蚀刻，其中通过使用含有碳氟化合物气体，氧气，氦气和氩气中的至少一种的蚀刻气体进行等离子体蚀刻 天然气，氪气和氙气。
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