公开(公告)号：US07894498B2

公开(公告)日：2011-02-22

申请号：US12195727

申请日：2008-08-21

申请人： Keisuke Miyazaki

发明人： Keisuke Miyazaki

IPC分类号： G02B26/08 ,  H01S5/00

CPC分类号： H01S5/02268 ,  B82Y20/00 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01S5/02208 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3432 ,  H01S5/4031 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01004

摘要： A semiconductor laser device including a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front surface; and a semiconductor laser element that is packaged on the submount through the connection electrode, and is allowed to emit a laser beam in a direction parallel to the front surface.

摘要翻译： 一种半导体激光装置，其具有彼此平行的具有与所述相对面对应的前表面和后表面的基台，并且可见光透射率为60％以上; 形成在前表面上的连接电极; 以及半导体激光元件，其通过连接电极封装在基座上，并且允许沿与前表面平行的方向发射激光束。

公开(公告)号：US06940884B2

公开(公告)日：2005-09-06

申请号：US10417268

申请日：2003-04-17

申请人： Yoshinori Ohitsu ,  Keisuke Miyazaki ,  Yoshihisa Fujii

发明人： Yoshinori Ohitsu ,  Keisuke Miyazaki ,  Yoshihisa Fujii

IPC分类号： H01L21/205 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S5/00

CPC分类号： H01S5/16 ,  H01S5/2222 ,  H01S5/2231

摘要： Provided is a semiconductor laser device in which at least an n-type first cladding layer, an active layer and a p-type second cladding layer are formed on or above an n-type semiconductor substrate. An n-type current block layer having a stripe-shaped groove-like removed portion is formed on the second cladding layer and at least a p-type third cladding layer is formed on the current block layer including the stripe-shaped removed portion. The second cladding layer has a p-type C impurity concentration of 3×1017 cm−3 to 2×1018 cm−3.

摘要翻译： 提供一种半导体激光器件，其中在n型半导体衬底上或其上形成至少n型第一覆盖层，有源层和p型第二覆盖层。 在第二包层上形成具有条形槽状去除部分的n型电流阻挡层，并且在包括条形去除部分的当前阻挡层上至少形成p型第三包覆层。 第二包覆层具有3×10 17 cm -3至2×10 18 cm -3的p型C杂质浓度， SUP>。

公开(公告)号：US20070165686A1

公开(公告)日：2007-07-19

申请号：US11652097

申请日：2007-01-11

申请人： Keisuke Miyazaki

发明人： Keisuke Miyazaki

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： H01S5/22

摘要： An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP cladding layer 8, a non-doped MQW active layer 10, a p-type AlGaInP cladding layer 12, a p-type AlGaInP cladding layer 14 and a p-type GaAs cap layer 16 are formed on an n-type GaAs substrate 2. The p-type cladding layer 14 and the p-type cap layer 16 are formed in a ridge portion 15, and a narrow width portion 17 is formed including an upper portion of the n-type substrate 2 and the layers there above. An SiO2 film 18 is formed on the side surfaces of the ridge portion 15, the surfaces of the narrow width portion 17 and the surface of a step portion 2a of the n-type substrate 2. A p-side electrode layer 23 is formed on the surfaces of the SiO2 film 18 formed on ridge portion 15 and the narrow width portion 17.

摘要翻译： n型GaAs缓冲层4，n型GaInP中间层6，n型AlGaInP包覆层8，非掺杂MQW有源层10，p型AlGaInP包层12，p型AlGaInP 在n型GaAs衬底2上形成包覆层14和p型GaAs覆盖层16。 p型覆层14和p型覆盖层16形成在脊部15中，窄宽度部17形成为包括n型基板2的上部和其上方的层。 在脊部15的侧表面，窄宽度部分17的表面和n型基底2的台阶部分2a的表面上形成SiO 2膜18。 在形成在脊部15和窄宽度部17上的SiO 2膜18的表面上形成p侧电极层23。