公开(公告)号：US20190245322A1

公开(公告)日：2019-08-08

申请号：US16316602

申请日：2017-06-28

申请人： PANASONIC CORPORATION

发明人： Hiroyuki HAGINO ,  Osamu IMAFUJI ,  Shinichiro NOZAKI

IPC分类号： H01S5/028 ,  H01S5/22 ,  H01S5/343 ,  H01S5/042

CPC分类号： H01S5/0281 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/343 ,  H01S5/34333

摘要： A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.

公开(公告)号：US20190036300A1

公开(公告)日：2019-01-31

申请号：US16071987

申请日：2017-02-27

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Naoto UEDA ,  Kouji OOMORI ,  Takayuki YOSHIDA

IPC分类号： H01S5/024 ,  H01S5/026 ,  H01S5/022

CPC分类号： H01S5/02423 ,  H01S5/02236 ,  H01S5/02264 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02469 ,  H01S5/02492 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/4025

摘要： A semiconductor laser device (1) includes a heat sink (20), a submount (30), a first electrode (60), an insulating layer (70), a semiconductor laser element (40), a connecting portion (50), and a second electrode (61). The submount (30) is conductive and on a first region (R1) of the upper surface of the heat sink (20). The first electrode (60) is conductive and on a second region (R2), different from the first region (R1), of the upper surface of the heat sink (20). The first electrode (60) is electrically connected either to at least part of a side surface of the submount (30) or to the upper surface of the submount (30).

公开(公告)号：US20190006310A1

公开(公告)日：2019-01-03

申请号：US16018829

申请日：2018-06-26

申请人： NICHIA CORPORATION

发明人： Masatoshi NAKAGAKI

IPC分类号： H01L23/00 ,  H01L23/538 ,  H01L23/14 ,  H01L21/52 ,  H01S5/02

CPC分类号： H01L24/31 ,  H01L21/52 ,  H01L23/142 ,  H01L23/3735 ,  H01L23/5383 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/02268 ,  H01S5/02276 ,  H01S5/02469

摘要： A mounting component includes a main body and a metal layer. The main body has a first main surface and a second main surface. The metal layer is arranged on the first main sur face of the main body. The metal layer includes at least one concave recognition mark having an inclined surface that is inclined with respect to a main surface of the metal layer.

公开(公告)号：US20180356459A1

公开(公告)日：2018-12-13

申请号：US15934359

申请日：2018-03-23

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Ryosuke KUBOTA

IPC分类号： G01R31/28 ,  G01R31/27 ,  H01S5/00

CPC分类号： G01R31/2863 ,  G01R31/2635 ,  G01R31/275 ,  G01R31/2872 ,  H01S5/0021 ,  H01S5/0042 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/423 ,  H01S2301/176

摘要： A method of fabricating a surface-emitting laser includes the steps of fabricating a substrate product including device sections, a pad electrode, and a conductor, each of the device sections including a surface-emitting laser having an electrode, the conductor connecting the pad electrode to the electrode across a boundary of the device sections; attaching a connection device to the substrate product, the connection device including a probe device having a probe and a probe support base having an opening; performing a burn-in test of the surface-emitting lasers by applying electric power to the pad electrode through the probe at a high temperature; and after the burn-in test, separating the substrate product into semiconductor chips. The burn-in test includes a step of monitoring light emitted by the surface-emitting laser through the opening during the burn-in test, and a step of selecting the surface-emitting lasers based on a monitoring result.

公开(公告)号：US20180337319A1

公开(公告)日：2018-11-22

申请号：US15979238

申请日：2018-05-14

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Masaki MIGITA

IPC分类号： H01L35/32 ,  H01L33/64 ,  H01L33/36 ,  H01L35/10 ,  H01S5/024 ,  H05K1/02

CPC分类号： H01L35/32 ,  H01L33/36 ,  H01L33/644 ,  H01L33/645 ,  H01L35/10 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/02296 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/02476 ,  H01S5/0683 ,  H01S5/3401 ,  H05K1/0203 ,  H05K1/0204 ,  H05K1/145 ,  H05K2201/042 ,  H05K2201/10106 ,  H05K2201/10219

摘要： A light emitting apparatus includes: a module including a Peltier device with a first face and a second face, a supporting member with a principal surface, and a light emitting semiconductor device, the first face being opposite to the second face; and a package housing the module, the principal surface having a first area and a second area adjacent to the first area, the supporting member supporting the first face of the Peltier device on the first area of the principal surface, and the supporting member supporting the light emitting semiconductor device on the second area of the principal surface.

公开(公告)号：US20180331495A1

公开(公告)日：2018-11-15

申请号：US15776549

申请日：2016-02-22

申请人： Mitsubishi Electric Corporation

发明人： Seiji NAKANO ,  Toshihide SEKI

IPC分类号： H01S5/022

CPC分类号： H01S5/02288 ,  G03B21/2033 ,  H01S5/02 ,  H01S5/02276 ,  H01S5/02292

摘要： A technology disclosed in the specification of the subject application relates to a laser light source device capable of suppressing loss of optical output power from a semiconductor laser device, and to a method of manufacturing of a laser light source device while the degree of freedom in arrangement of the semiconductor laser device is secured. A laser light source device according to the subject technology includes a semiconductor laser device, and an optical element provided on an optical axis of an emission light emitted from the semiconductor laser device. The optical element separates a portion of a luminous flux of an emission light that is emitted from the semiconductor laser device and that is not separated in a fast axis direction from another portion so as to be separated in the fast axis direction.

公开(公告)号：US20180310397A1

公开(公告)日：2018-10-25

申请号：US15956945

申请日：2018-04-19

申请人： Oclaro Japan, Inc.

发明人： Daisuke NOGUCHI ,  Hiroshi YAMAMOTO

IPC分类号： H05K1/02 ,  H05K3/10 ,  H01S5/022 ,  H05K1/18 ,  H05K1/14

CPC分类号： H05K1/025 ,  H01S5/02212 ,  H01S5/02276 ,  H01S5/06226 ,  H05K1/0274 ,  H05K1/141 ,  H05K1/189 ,  H05K3/103 ,  H05K3/3447 ,  H05K3/363 ,  H05K2201/10121 ,  H05K2203/049

摘要： An optical subassembly includes: a conductor plate having a pair of penetration holes, both penetrating the conductor plate from an outer surface to an inner surface; a pair of lead terminals fixed in the two respective penetration holes and passing through the pair of penetration holes; a wiring board with a pair of wiring patterns arranged on a surface; and a plurality of bonding wires electrically connecting the pair of lead terminals and the pair of wiring patterns. A cross section of the pair of lead terminals on the inner surface side is larger than a cross section on the outer surface side. End faces on the inner surface side are situated within a range from +180 μm to −100 μm to the inner side from the inner surface of the conductor plate in a direction perpendicular to the inner surface.

公开(公告)号：US20180294620A1

公开(公告)日：2018-10-11

申请号：US15944049

申请日：2018-04-03

申请人： Oclaro Japan, Inc.

发明人： Takanori SUZUKI ,  Shigehisa TANAKA

IPC分类号： H01S5/026 ,  G02B6/42 ,  H01S5/18 ,  H01S5/12 ,  H01S5/022

CPC分类号： H01S5/0267 ,  G02B6/4206 ,  G02B6/4214 ,  G02B2006/12107 ,  G02B2006/12147 ,  H01S5/02216 ,  H01S5/02276 ,  H01S5/0228 ,  H01S5/02288 ,  H01S5/0261 ,  H01S5/0623 ,  H01S5/1085 ,  H01S5/12 ,  H01S5/18

摘要： An optical module includes a semiconductor laser with an active layer disproportionately positioned closer to the first surface. The semiconductor laser includes a reflector for reflecting the light outgoing from the active layer in a direction along the first surface toward another direction. The active layer and the reflector are monolithically integrated in the semiconductor laser. The optical module includes a carrier formed from a light transmissive material and having a third surface and a fourth surface opposite to each other. The semiconductor laser is mounted on the carrier so as for the light to enter the third surface. The carrier has a lens integrally on the fourth surface. The optical module includes a substrate having an optical waveguide and an optical coupler for guiding the light to the optical waveguide. The optical waveguide and the optical coupler are integrated in the substrate.

公开(公告)号：US10079473B2

公开(公告)日：2018-09-18

申请号：US15625202

申请日：2017-06-16

申请人： FUJI XEROX Co., Ltd.

发明人： Takashi Kondo

IPC分类号： H01S5/00 ,  H01S5/068 ,  H01S5/042 ,  H01S5/30 ,  H01S5/40 ,  H01S5/183 ,  H01S5/42 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/06817 ,  H01S5/02276 ,  H01S5/0261 ,  H01S5/042 ,  H01S5/0428 ,  H01S5/06216 ,  H01S5/06226 ,  H01S5/068 ,  H01S5/06825 ,  H01S5/183 ,  H01S5/18313 ,  H01S5/2232 ,  H01S5/3013 ,  H01S5/3095 ,  H01S5/32 ,  H01S5/323 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/42 ,  H01S5/423

摘要： A light-emitting component includes laser elements and a setting unit. Each laser element is set to be in an on state with a logical value “m (m represents an integer of 1 or more)”, an on state considered as having a logical value “0”, or an off state. The setting unit sets the laser element to be in a state ready to transition to an on state and sets the laser element in the state ready to transition to the on state to be in the on state considered as having a logical value “0” before a timing of setting the laser element to the on state with a logical value “m”.

公开(公告)号：US20180261733A1

公开(公告)日：2018-09-13

申请号：US15820180

申请日：2017-11-21

申请人： TOYODA GOSEI CO., LTD.

发明人： Tomohiro MIWA ,  Shota SHIMONISHI ,  Satomi SEKI ,  Daisuke KATO ,  Shigeo TAKEDA

IPC分类号： H01L33/50 ,  H01S5/022

CPC分类号： H01L33/504 ,  H01L33/502 ,  H01L33/507 ,  H01S5/02228 ,  H01S5/02276

摘要： A light emitting device includes a light emitting element that emits a light having a peak wavelength of not less than 411 nm and not more than 421 nm, and a phosphor that emits a fluorescence having a longer peak wavelength than the peak wavelength of the light emitted from the light emitting element. An emission spectrum of only the light emitting element and an emission spectrum of only the phosphor overlap each other while having an overlap width of not less than 71 nm and not more than 81 nm. The overlap width is defined as a wavelength difference between a long wavelength side point at a 0.1% height of a peak height of the emission spectrum of only the light emitting element and a short wavelength side point at a 0.1% height of a highest peak of the emission spectrum of only the phosphor.