公开(公告)号：US06261365B1

公开(公告)日：2001-07-17

申请号：US09272782

申请日：1999-03-19

申请人： Yuji Matsuyama ,  Yoji Mizutani ,  Shinji Nagashima ,  Akira Yonemizu

发明人： Yuji Matsuyama ,  Yoji Mizutani ,  Shinji Nagashima ,  Akira Yonemizu

IPC分类号： B05C502

CPC分类号： H01L21/67748 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67178

摘要： When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.

公开(公告)号：US06564474B2

公开(公告)日：2003-05-20

申请号：US09948570

申请日：2001-09-10

申请人： Shinji Nagashima

发明人： Shinji Nagashima

IPC分类号： F26B1300

CPC分类号： H01L21/67103

摘要： The present invention relates to a method for subjecting a substrate on which a coating film is formed to heat processing, and the method comprises the steps of heating the substrate to a predetermined high temperature and decreasing the temperature of the substrate to a predetermined low temperature, wherein in the step of decreasing the temperature of the substrate to the low temperature, a first step of decreasing the temperature of the substrate from the predetermined high temperature to a predetermined intermediate temperature and a second step of decreasing the temperature of the substrate from the intermediate temperature to the predetermined low temperature are performed separately. In the present invention, the step of decreasing the temperature of the substrate, which is heated to the high temperature, to the predetermined low temperature is divided into two stages as described above, and hence compared with a case where the temperature of the substrate is rapidly decreased nonstop from the high temperature to the low temperature, the temperature decreasing speed of the substrate is reduced, whereby cracks, a warp, and the like caused by the rapid cooling of the substrate can be prevented.

摘要翻译： 本发明涉及对其上形成有涂膜的基板进行加热处理的方法，该方法包括以下步骤：将基板加热到预定的高温并将基板的温度降低到预定的低温， 其中在将衬底的温度降低到低温的步骤中，将衬底的温度从预定的高温降低到预定的中间温度的第一步骤和从中间体降低衬底的温度的第二步骤 分别进行到预定低温的温度。 在本发明中，如上所述将被加热到高温的基板的温度降低到规定的低温的步骤分为两个阶段，因此与基板的温度为 从高温到低温不间断地迅速降低，基板的降温速度降低，从而可以防止由于基板的快速冷却而引起的裂纹，翘曲等。

公开(公告)号：US06419751B1

公开(公告)日：2002-07-16

申请号：US09625305

申请日：2000-07-25

申请人： Shinji Nagashima

发明人： Shinji Nagashima

IPC分类号： C23C1600

CPC分类号： H01L21/67017 ,  Y10T29/49808 ,  Y10T29/49826

摘要： In a hot plate for performing heat processing while an inert gas is supplied, a mounting table is provided with a groove and a lower end portion of a lid body can be inserted into the groove. The lid body is lowered in two steps by a lid body drive apparatus. The lid body forms a processing chamber between the lid body and the mounting table by the lowering of the first step, and the lower end portion of the lid body is inserted into the groove by the lowering of the second step, thereby reducing the processing chamber in capacity. Consequently, in a substrate processing apparatus which requires a supply of gas, it becomes possible to reduce the capacity of the processing chamber and to reduce the required amount of gas.

摘要翻译： 在供给惰性气体时进行热处理的加热板中，安装台设置有槽，盖体的下端部能够插入槽内。 盖体通过盖体驱动装置分两级下降。 盖体通过降低第一台阶而在盖体和安装台之间形成处理室，并且通过第二阶段的降低将盖体的下端部插入槽中，从而将处理室 容量。 因此，在需要供给气体的基板处理装置中，能够降低处理室的容量并减少所需量的气体。

公开(公告)号：US07520936B2

公开(公告)日：2009-04-21

申请号：US10774423

申请日：2004-02-10

申请人： Shinji Nagashima ,  Tomohiro Iseki

发明人： Shinji Nagashima ,  Tomohiro Iseki

IPC分类号： B05C11/00 ,  B05C5/00 ,  F26B3/34

CPC分类号： H01L21/67178 ,  B05D3/0209 ,  B05D3/0254 ,  B05D3/067 ,  H01L21/67109 ,  H01L21/67115

摘要： The present invention is a hardening processing apparatus for heating a substrate coated with a coating solution to harden the coating film on the substrate, which includes a first processing chamber for mounting the substrate coated with the coating solution on a heating plate and heating the substrate to a predetermined temperature on a one-by-one basis; a first irradiation unit provided in the first processing chamber, for irradiating the substrate mounted on the heating plate with ultraviolet light; and a second processing chamber connected in a communicating manner to the first processing chamber, for mounting the substrate coated with the coating solution on a temperature adjusting plate and adjusting the substrate to a temperature lower than a processing temperature of hardening processing on a one-by-one basis, in which the substrate is heated by the heating plate while being irradiated with the ultraviolet light by the first irradiation unit so that the coating film on the substrate is hardened. Accordingly, it is possible to harden the coating film at a lower temperature than that in the case of no irradiation of ultraviolet light so as to prevent occurrence of adverse effects due to heat to devices.

摘要翻译： 本发明是一种硬化处理装置，用于对涂覆有涂层溶液的基材进行加热以使基材上的涂膜硬化，该基材包括用于将涂布有涂布溶液的基材安装在加热板上并将基材加热至 一个一个的预定温度; 设置在第一处理室中的第一照射单元，用于用紫外线照射安装在加热板上的基板; 以及第二处理室，以与第一处理室的连通方式连接，用于将涂覆有涂布溶液的基板安装在温度调节板上，并将基板调整到低于硬化处理的加工温度的温度， 一个基础，其中通过第一照射单元用紫外线照射基板被加热板加热，使得基板上的涂膜硬化。 因此，可以在比没有紫外线照射的情况下更低的温度下使涂膜硬化，从而防止由于热而对装置产生不利影响。

公开(公告)号：US06673155B2

公开(公告)日：2004-01-06

申请号：US09416953

申请日：1999-10-13

申请人： Shinji Nagashima ,  Hiroyuki Miyamoto ,  Shizuo Ogawa ,  Shinji Koga

发明人： Shinji Nagashima ,  Hiroyuki Miyamoto ,  Shizuo Ogawa ,  Shinji Koga

IPC分类号： B05C1100

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： An apparatus for forming a coating film comprising, a coating unit for forming a coating film by applying a coating solution onto a substrate, and a curing unit for curing the coating film by applying a heating and a cooling to the substrate, in which, the curing unit comprises a heating chamber having a hot plate for heating substrates having the coating solution applied thereon one by one, a cooling chamber communicated with the heating chamber and having a cooling plate for cooling the substrates processed with heat, an inert gas supply mechanism for supplying an insert gas to the heating chamber and the cooling chamber, and an evacuation mechanism for evacuating each of the heating chamber and the cooling chamber.

摘要翻译： 一种涂膜形成装置，其特征在于，具有：通过在基板上涂布涂布液而形成涂膜的涂布单元和通过对所述基板进行加热和冷却来固化所述涂膜的固化单元，其中， 固化单元包括加热室，其具有用于加热其上涂覆有溶液的基板的热板，与加热室连通的冷却室，具有用于冷却加热的基板的冷却板，用于 向加热室和冷却室供给插入气体，以及用于抽出加热室和冷却室的抽空机构。

公开(公告)号：US06590186B2

公开(公告)日：2003-07-08

申请号：US10055956

申请日：2002-01-28

申请人： Takashi Tanaka ,  Shinji Nagashima

发明人： Takashi Tanaka ,  Shinji Nagashima

IPC分类号： F27B514

CPC分类号： H01L21/67109

摘要： A baking unit of the present invention comprises: a hot plate on which the substrate is placed; a casing; a gas supply tubes; a baffle ring which surrounds the wafer and is provided with a plurality of gas blowing apertures; and a rotation motor. An inert gas is supplied to the wafer from the plurality of blowing apertures which is moved by rotation or turn round of the baffle by using the rotation motor.

公开(公告)号：US06350316B1

公开(公告)日：2002-02-26

申请号：US09425298

申请日：1999-10-25

申请人： Shinichi Hayashi ,  Shinji Nagashima

发明人： Shinichi Hayashi ,  Shinji Nagashima

IPC分类号： B05C502

CPC分类号： B05D7/52 ,  B05C11/08 ,  B05D1/005 ,  B05D3/0254 ,  B05D3/0486

摘要： An apparatus for forming a coating film, comprising a process section for applying a series of processes for forming a coating film to a substrate, and a common transfer mechanism for transferring a substrate in the process section, in which, the process section comprises a cooling unit for cooling a substrate, a coating unit for applying a coating solution containing a first solvent to the substrate to form a coating film, an aging unit for changing the coating film formed in the coating unit to a gel-state film if the coating film is formed in a sol state, a solvent exchange unit for bringing a second solvent, which differs from the first solvent in composition, into contact with the coating film to replace the first solvent contained in the coating film with the second solvent, a curing process unit for heating and cooling the substrate under an atmosphere low in oxygen concentration, thereby curing the coating film, and a heating unit for heating the coating film formed on the substrate.

摘要翻译： 一种用于形成涂膜的装置，包括用于将一系列用于将涂膜形成工艺的工艺部分用于基材的工艺部分和用于在工艺部分中转移基材的公共转移机构，其中，所述工艺部分包括冷却 用于冷却基板的单元，用于将包含第一溶剂的涂布溶液涂布到基板以形成涂膜的涂布单元，用于将涂布单元中形成的涂膜改变为凝胶状膜的老化单元，如果涂膜 形成溶胶状态的溶剂交换单元，用于使与第一溶剂的组成不同的第二溶剂与涂膜接触以用第二溶剂代替涂膜中所含的第一溶剂，固化过程 单元，用于在氧浓度低的气氛下加热和冷却基板，从而固化涂膜;以及加热单元，用于加热形成在底层上的涂膜 trate。

公开(公告)号：US06982002B2

公开(公告)日：2006-01-03

申请号：US10068838

申请日：2002-02-11

申请人： Takashi Tanaka ,  Shinji Nagashima

发明人： Takashi Tanaka ,  Shinji Nagashima

IPC分类号： B05C13/00

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： The apparatus of the present invention for forming a coating film on a substrate by applying a coating liquid to the substrate comprises: a spin chuck for holding the substrate; a motor for rotating the spin chuck; and a nozzle for dropping the coating liquid on the center surface of the substrate. The nozzle included a spiral groove or a plurality of fins for giving a gyrating force to the dropped coating liquid.

公开(公告)号：US06730620B2

公开(公告)日：2004-05-04

申请号：US10134483

申请日：2002-04-30

申请人： Kei Miyazaki ,  Yuichiro Uchihama ,  Kenji Yasuda ,  Kiminari Sakaguchi ,  Shinji Nagashima

发明人： Kei Miyazaki ,  Yuichiro Uchihama ,  Kenji Yasuda ,  Kiminari Sakaguchi ,  Shinji Nagashima

IPC分类号： H01L2126

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.

摘要翻译： 进行对在晶片W上形成的绝缘膜材料的正面施加紫外线的处理，由此其正面的接触角变小。 因此，当在上述正面上施加绝缘膜材料时，材料平滑地扩展，并且在上层绝缘膜材料的正面上不会发生凹凸。 由此，可以在基板上形成厚且平坦的绝缘膜。

公开(公告)号：US06413317B1

公开(公告)日：2002-07-02

申请号：US09661309

申请日：2000-09-13

申请人： Kei Miyazaki ,  Yuichiro Uchihama ,  Kenji Yasuda ,  Kiminari Sakaguchi ,  Shinji Nagashima

发明人： Kei Miyazaki ,  Yuichiro Uchihama ,  Kenji Yasuda ,  Kiminari Sakaguchi ,  Shinji Nagashima

IPC分类号： B05B5025

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.

摘要翻译： 进行对在晶片W上形成的绝缘膜材料的正面施加紫外线的处理，由此其正面的接触角变小。 因此，当在上述正面上施加绝缘膜材料时，材料平滑地扩展，并且在上层绝缘膜材料的正面上不会发生凹凸。 由此，可以在基板上形成厚且平坦的绝缘膜。