公开(公告)号：US20100135069A1

公开(公告)日：2010-06-03

申请号：US12629671

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/16

CPC分类号： H01L27/226 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.

摘要翻译： 提供了电阻可变存储器件，并且包括通过利用基于注入电流的自旋转移效应来写入数据的电阻变化存储单元。 存储器件还包括产生多个写入脉冲的组合脉冲的驱动电路和限定写入脉冲之间的电平的偏移脉冲，并且在写入时将组合的脉冲提供给存储器单元。

公开(公告)号：US08149613B2

公开(公告)日：2012-04-03

申请号：US12629671

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： H01L27/226 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.

摘要翻译： 提供了电阻可变存储器件，并且包括通过利用基于注入电流的自旋转移效应来写入数据的电阻变化存储单元。 存储器件还包括产生多个写入脉冲的组合脉冲的驱动电路和限定写入脉冲之间的电平的偏移脉冲，并且在写入时将组合的脉冲提供给存储器单元。

公开(公告)号：US20080197433A1

公开(公告)日：2008-08-21

申请号：US12034461

申请日：2008-02-20

申请人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  Y10S977/933

摘要： Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer, in the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer.

摘要翻译： 公开了一种存储器件，其包括：基于磁体的磁化状态保持其上的信息的存储器层;通过非磁性层形成在存储层上的具有固定磁化方向的固定磁化层;以及两个金属布线 在存储器中与固定磁化层的两端相邻地形成，通过使堆积方向的电流通过而使存储层的磁化方向变化，从而将信息记录在存储层上。

公开(公告)号：US20080151607A1

公开(公告)日：2008-06-26

申请号：US11940915

申请日：2007-11-15

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/02

CPC分类号： G11C11/16 ,  Y10S977/935

摘要： Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8×10−7 Ωm or more.

摘要翻译： 公开了一种存储元件，其具有基于磁性材料的磁化状态保持信息的存储层; 具有铁磁层的固定磁化层; 以及介于所述存储层和所述固定磁化层之间的中间层。 在存储元件中，沿层叠方向注入自旋极化电子以改变存储层的磁化方向，从而将信息记录在存储层中，形成存储层的铁磁层的电阻率为8×10 -6， 7欧姆以上。

公开(公告)号：US08089802B2

公开(公告)日：2012-01-03

申请号：US12034461

申请日：2008-02-20

申请人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/16 ,  Y10S977/933

摘要： Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer. In the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer.

摘要翻译： 公开了一种存储器件，其包括：基于磁体的磁化状态保持其上的信息的存储器层;通过非磁性层形成在存储层上的具有固定磁化方向的固定磁化层;以及两个金属布线 形成在固定磁化层的两端附近。 在存储器中，存储层的磁化方向通过在堆叠方向上通过电流来改变，以将信息记录在存储层上。

公开(公告)号：US07881097B2

公开(公告)日：2011-02-01

申请号：US11940915

申请日：2007-11-15

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  Y10S977/935

摘要： Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8×10−7 Ωm or more.

摘要翻译： 公开了一种存储元件，其具有基于磁性材料的磁化状态保持信息的存储层; 具有铁磁层的固定磁化层; 以及介于所述存储层和所述固定磁化层之间的中间层。 在存储元件中，沿堆叠方向注入自旋极化电子以改变存储层的磁化方向，从而将信息记录在存储层中，形成存储层的铁磁层的电阻率为8×10-7 ＆OHgr; m以上。

公开(公告)号：US20100200939A1

公开(公告)日：2010-08-12

申请号：US12668925

申请日：2008-06-30

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228

摘要： A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 16 interposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.

摘要翻译： 提供了能够在不增加写入电流的情况下提高热稳定性的存储器。 存储器被配置为包括：存储元件，其具有根据磁性物质的磁化状态保存信息的存储层，并且其中在存储层上设置有中间层16的磁化固定层，中间层 层由绝缘体形成，通过在层叠方向注入电子自旋极化来改变存储层的磁化方向，使得信息被记录在存储层中，并且从绝缘层向存储层施加失真 其存在于存储层周围并且具有比存储层更小的热膨胀系数。 一种用于提供在存储元件的层叠方向上流动的电流的布线。

公开(公告)号：US20080180992A1

公开(公告)日：2008-07-31

申请号：US12013895

申请日：2008-01-14

申请人： Kazutaka Yamane ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

发明人： Kazutaka Yamane ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  Y10S977/934 ,  Y10S977/935

摘要： A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.

摘要翻译： 存储元件包括用于根据磁性材料的磁化状态保持信息的存储层; 以及磁化方向固定的磁化固定层，其相对于存储层通过非磁性层布置。 存储层的磁化方向通过在层叠方向上施加电流而改变，以使信息能够被记录到存储层。 在磁化固定层或相对于存储层的磁化固定层的相对侧上形成分别具有层压方向上的磁化成分并且彼此具有不同方向的磁化的多个磁化区域。

公开(公告)号：US08339840B2

公开(公告)日：2012-12-25

申请号：US12668925

申请日：2008-06-30

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228

摘要： A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 16 interposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.

摘要翻译： 提供了能够在不增加写入电流的情况下提高热稳定性的存储器。 存储器被配置为包括：存储元件，其具有根据磁性物质的磁化状态保存信息的存储层，并且其中在存储层上设置有中间层16的磁化固定层，中间层 层由绝缘体形成，通过在层叠方向注入电子自旋极化来改变存储层的磁化方向，使得信息被记录在存储层中，并且从绝缘层向存储层施加失真 其存在于存储层周围并且具有比存储层更小的热膨胀系数。 一种用于提供在存储元件的层叠方向上流动的电流的布线。

公开(公告)号：US07633796B2

公开(公告)日：2009-12-15

申请号：US12013895

申请日：2008-01-14

申请人： Kazutaka Yamane ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

发明人： Kazutaka Yamane ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  Y10S977/934 ,  Y10S977/935

摘要： A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.

摘要翻译： 存储元件包括用于根据磁性材料的磁化状态保持信息的存储层; 以及磁化方向固定的磁化固定层，其相对于存储层通过非磁性层布置。 存储层的磁化方向通过在层叠方向上施加电流而改变，以使信息能够被记录到存储层。 在磁化固定层或相对于存储层的磁化固定层的相对侧上形成分别具有层压方向上的磁化成分并且彼此具有不同方向的磁化的多个磁化区域。